Inventors:
Robert J. Wilson - Campbell CA, US
Jung-Sub Wi - Tsukuba, JP
Shan X. Wang - Portola Valley CA, US
Edward S. Barnard - Redwood City CA, US
Mark L. Brongersma - Menlo Park CA, US
Mary Tang - San Francisco CA, US
Assignee:
The Board of Trustees of the Leland Stanford Junior University - Palo Alto CA
International Classification:
B22F 1/00
G01N 21/65
Abstract:
A Raman-active nanoparticle is provided that includes a dish-shape plasmonically active metal base, and a plasmonically active metal pillar disposed on the plasmonically active metal base, where the plasmonically active metal pillar is disposed within the dish-shape plasmonically active metal base and normal to a bottom of the dish-shape plasmonically active metal base, where a circular gap is disposed between the dish-shape plasmonically active metal pillar and inner walls of the dish-shape plasmonically active metal base. In one embodiment a Raman-active nanoparticle is provided that includes a dish-shape base having a dielectric material, an electrically conductive layer disposed on the inner surface of the dish-shape base, and an electrically conductive pillar disposed on the conductive layer, and within the dish-shape and perpendicular to a bottom of the dish-shape base, where a circular gap is disposed between the conductive pillar and inner walls of the dish-shape base.
