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Douglas A Buchberger

from Cartersville, GA
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Connected to:
Daniela Buchberger, 75Laurie A Buchberger, 53Lindsay B Buchberg, 39Daniel W Buchbinder, 43Donna R Buchbinder, 67Laurel D Buchbinder, 80Leonardo Buchbinder, 88Leolynn R Buchco, 38Douglas J Buchda, 73Elliott D Buchdruker, 89

Douglas Buchberger Phones & Addresses

  • Cartersville, GA
  • 2076 Vintage Ln, Livermore, CA 94550 (408) 464-3985
  • 421 Czerny St, Tracy, CA 95376
  • Alameda, CA
  • 2076 Vintage Ln, Livermore, CA 94550 (925) 321-3659

Work

Company: Applied materials 1986 Position: Dmts

Education

School / High School: Devry University 1983 to 1986

Skills

Electronics • Semiconductor Industry • Failure Analysis • Electrical Engineering • Semiconductors • Plasma Etch • Engineering • Hardware Architecture • Electrostatic Chuck Design • Mathcad Modeling • Test Engineering • Inductively Coupled Plasma • Rf Plasma Chamber Design • Circuit Design • Pcb Design • Test Equipment • Vhf Plasma Source • Rf Matching Networks • Cathode Rf Power Delivery

Interests

New Product Development • Brewing Beer • Tennis

Emails

d***[email protected]

Industries

Semiconductors

Resumes

Resumes

Douglas Buchberger Photo 1

Dmts

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Location:
Livermore, CA
Industry:
Semiconductors
Work:
Applied Materials
Dmts
Education:
Devry University 1983 - 1986
Skills:
Electronics
Semiconductor Industry
Failure Analysis
Electrical Engineering
Semiconductors
Plasma Etch
Engineering
Hardware Architecture
Electrostatic Chuck Design
Mathcad Modeling
Test Engineering
Inductively Coupled Plasma
Rf Plasma Chamber Design
Circuit Design
Pcb Design
Test Equipment
Vhf Plasma Source
Rf Matching Networks
Cathode Rf Power Delivery
Interests:
New Product Development
Brewing Beer
Tennis

Publications

Us Patents

Plasma Reactor With Heated Source Of A Polymer-Hardening Precursor Material

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US Patent:
6440866, Aug 27, 2002
Filed:
Jun 16, 2000
Appl. No.:
09/595750
Inventors:
Kenneth S. Collins - San Jose CA
Michael Rice - Pleasanton CA
David W. Groechel - Los Altos Hills CA
Gerald Zheyao Yin - Cupertino CA
Jon Mohn - Saratoga CA
Craig A. Roderick - San Jose CA
Douglas Buchberger - Tracy CA
Jeffrey Marks - San Jose CA
Peter Keswick - Fremont CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 2100
US Classification:
438714, 156345, 216 67, 216 68, 438715, 438723, 438738, 438743
Abstract:
A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

Inductively Coupled Rf Plasma Reactor Having An Antenna Adjacent A Window Electrode

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US Patent:
6444085, Sep 3, 2002
Filed:
Sep 29, 2000
Appl. No.:
09/675319
Inventors:
Kenneth S. Collins - San Jose CA
Michael Rice - Pleasanton CA
John Trow - San Jose CA
Douglas Buchberger - Tracy CA
Craig A. Roderick - San Jose CA
Assignee:
Applied Materials Inc. - Santa Clara CA
International Classification:
C23C 1600
US Classification:
156345, 20429806, 20429808, 20429831, 20429834, 118723 I, 118723 IR, 118723 E, 118723 ER
Abstract:
The invention is embodied in an inductively coupled RF plasma reactor including a reactor chamber enclosure defining a plasma reactor chamber and a support for holding a workpiece inside the chamber, a non-planar inductive antenna adjacent the reactor chamber enclosure, the non-planar inductive antenna including inductive elements spatially distributed in a non-planar relative to a plane of the workpiece to compensate for a null in an RF inductive pattern of the antenna, and a plasma source RF power supply coupled to the non-planar inductive antenna. The planar inductive antenna may be symmetrical or non-symmetrical, although it preferably includes a solenoid winding such as a vertical stack of conductive windings. In a preferred embodiment, the windings are at a minimum radial distance from the axis of symmetry while in an alternative embodiment the windings are at a radial distance from the axis of symmetry which is a substantial fraction of a radius of the chamber.

Inductively Coupled Rf Plasma Reactor Having An Overhead Solenoidal Antenna And Modular Confinement Magnet Liners

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US Patent:
6454898, Sep 24, 2002
Filed:
Jan 11, 2000
Appl. No.:
09/482261
Inventors:
Kenneth Collins - San Jose CA
Michael Rice - Pleasanton CA
Douglas Buchberger - Pleasanton CA
Craig Roderick - San Jose CA
Eric Askarinam - Sunnyvale CA
Gerhard Schneider - Cupertino CA
John Trow - San Jose CA
Joshua Tsui - Santa Clara CA
Dennis Grimard - Ann Arbor MI
Gerald Yin - Cupertino CA
Robert Wu - Pleasanton CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 1434
US Classification:
156345, 118723 E, 118723 ER, 118723 F, 118723 FR, 118723 AN, 118728, 20429831, 20429833, 20429834, 20429837, 20429806, 20429815, 20429816
Abstract:
In accordance with a first aspect of the invention, a plasma reactor having a chamber for containing a plasma and a passageway communicating with the chamber is enhanced with a first removable plasma confinement magnet module placed adjacent the passageway including a first module housing and a first plasma confinement magnet inside the housing. It may further include a second removable plasma confinement magnet module placed adjacent the passageway including a second module housing, and a second plasma confinement magnet. Preferably, the first and second modules are located on opposite sides of the passageway. Moreover, the first and second plasma confinement magnets have magnetic orientations which tend to oppose plasma transport or leakage through the passageway. Preferably, the module housing includes a relatively non-magnetic thermal conductor such as aluminum and is in thermal contact with said chamber body. Cooling apparatus can be thermally coupled to the chamber body, whereby to maintain the first plasma confinement magnet below its Curie temperature.

Thermal Control Apparatus For Inductively Coupled Rf Plasma Reactor Having An Overhead Solenoidal Antenna

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US Patent:
6514376, Feb 4, 2003
Filed:
Mar 7, 2000
Appl. No.:
09/520623
Inventors:
Kenneth Collins - San Jose CA
Michael Rice - Pleasanton CA
Eric Askarinam - Sunnyvale CA
Douglas Buchberger - Tracy CA
Craig Roderick - San Jose CA
Assignee:
Applied Materials Inc. - Santa Clara CA
International Classification:
C23C 1600
US Classification:
15634537, 156345, 156 48, 15634553, 20429809, 20429831, 118723 I, 118723 IR, 118723 AN, 118724, 118728
Abstract:
The invention is embodied in a plasma reactor including a plasma reactor chamber and a workpiece support for holding a workpiece near a support plane inside the chamber during processing, the chamber having a reactor enclosure portion facing the support, a cold body overlying the reactor enclosure portion, a plasma source power applicator between the reactor enclosure portion and the cold body and a thermally conductor between and in contact with the cold body and the reactor enclosure. The thermal conductor and the cold sink define a cold sink interface therebetween, the reactor preferably further including a thermally conductive substance within the cold sink interface for reducing the thermal resistance across the cold sink interface. The thermally conductive substance can be a thermally conductive gas filling the cold body interface. Alternatively, the thermally conductive substance can be a thermally conductive solid material.

Parallel-Plate Electrode Plasma Reactor Having An Inductive Antenna And Adjustable Radial Distribution Of Plasma Ion Density

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US Patent:
6524432, Feb 25, 2003
Filed:
Mar 30, 2000
Appl. No.:
09/539814
Inventors:
Kenneth Collins - San Jose CA
Michael Rice - Pleasanton CA
John Trow - San Jose CA
Douglas Buchberger - Tracy CA
Eric Askarinam - Sunnyvale CA
Joshua Tsui - Santa Clara CA
David Groechel - Sunnyvale CA
Raymond Hung - San Jose CA
Assignee:
Applied Materials Inc. - Santa Clara CA
International Classification:
H01L 2100
US Classification:
15634548, 118723 I
Abstract:
There is disclosed a plasma reactor for processing a semiconductor workpiece such as a wafer, including a chamber having an overhead ceiling with a three-dimensional shape such as a hemisphere or dome. The reactor further includes an inductive antenna over the ceiling which may be conformal or nonconformal in shape with the ceiling. The ceiling may be a semiconductor material so that it can function as both a window for the inductive field of the antenna as well as an electrode which can be grounded, or to which RF power may be applied or which may be allowed to float electrically. The reactor includes various features which allow the radial distribution of the plasma ion density across the wafer surface to be adjusted to an optimum distribution for processing uniformity across the wafer surface.

Plasma Reactor Having An Inductive Antenna Coupling Power Through A Parallel Plate Electrode

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US Patent:
6623596, Sep 23, 2003
Filed:
Mar 13, 2000
Appl. No.:
09/523824
Inventors:
Kenneth S. Collins - San Jose CA
Michael Rice - Pleasanton CA
John Trow - San Jose CA
Douglas Buchberger - Tracy CA
Eric Askarinam - Sunnyvale CA
Joshua Chiu-Wing Tsui - Santa Clara CA
David W. Groechel - Los Altos Hills CA
Raymond Hung - San Jose CA
Assignee:
Applied Materials, Inc - Santa Clara CA
International Classification:
C23F 100
US Classification:
15634548, 15634538, 15634543, 118723 I, 118723 E
Abstract:
A plasma reactor for processing a workpiece includes a reactor enclosure defining a processing chamber, a base within the chamber for supporting the workpiece during processing thereof, a semiconductor window electrode overlying the base, a gas inlet system for admitting a plasma precursor gas into the chamber, an electrical terminal coupled to the semiconductor window electrode, an inductive antenna adjacent one side of the semiconductor window electrode opposite the base for coupling power into the interior of said chamber through the semiconductor window electrode.

Inductively Coupled Rf Plasma Reactor And Plasma Chamber Enclosure Structure Therefor

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US Patent:
6736931, May 18, 2004
Filed:
Oct 2, 2001
Appl. No.:
09/970121
Inventors:
Kenneth S. Collins - San Jose CA, 95111
Michael Rice - Pleasanton CA, 94566
John Trow - San Jose CA, 95111
Douglas Buchberger - Tracy CA, 95376
Craig A. Roderick - San Jose CA, 95117
International Classification:
C23C 1600
US Classification:
15634548, 15634549, 118723 I, 118723 IR, 20429831, 20429833, 20429834
Abstract:
A plasma chamber enclosure structure for use in an RF plasma reactor. The plasma chamber enclosure structure being a single-wall dielectric enclosure structure of an inverted cup-shape configuration and having ceiling with an interior surface of substantially flat conical configuration extending to a centrally located gas inlet. The plasma chamber enclosure structure having a sidewall with a lower cylindrical portion generally transverse to a pedestal when positioned over a reactor base, and a transitional portion between the lower cylindrical portion and the ceiling. The transitional portion extends inwardly from the lower cylindrical portion and includes a radius of curvature. The structure being adapted to cover the base to comprise the RF plasma reactor and to define a plasma-processing volume over the pedestal. The structure being formed of a dielectric material of silicon, silicon carbide, quartz, and/or alumina being capable of transmitting inductive power therethrough from an adjacent antenna.

Method And Apparatus To Confine Plasma And To Enhance Flow Conductance

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US Patent:
7618516, Nov 17, 2009
Filed:
May 3, 2006
Appl. No.:
11/381399
Inventors:
Kallol Bera - San Jose CA, US
Daniel Hoffman - Saratoga CA, US
Yan Ye - Saratoga CA, US
Michael Kutney - Santa Clara CA, US
Douglas A. Buchberger - Livermore CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 16/00
C23F 1/00
H01L 21/306
US Classification:
15634543, 15634551, 15634552, 15634553, 15634554, 15634555, 156915, 118728, 118729, 118730
Abstract:
The embodiments of the present invention generally relate to annular ring used in a plasma processing chamber. In one embodiment, the annular ring includes an inner wall, an upper outer wall, a lower outer wall, a step defined between the upper and lower outer wall, a top surface and a bottom wall. The step is formed upward and outward from the lower outer wall and inward and downward from the upper outer wall. The annular ring may be fabricated from a conductive material, such as silicon carbide and aluminum.
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Douglas A Buchberger from Cartersville, GA Get Report