Matthew F. O'Keefe - Chelmsford MA Joel L. Goodrich - Westford MA Donald Cordeiro - Woburn MA Nitin Jain - Nashua NH
Assignee:
The Whitaker Corporation - Wilmington DE
International Classification:
H01L 2100
US Classification:
438 39
Abstract:
It has been identified that a known loss mechanism in the access path to a mesa type device is more significant than previously believed. The source of the loss is due to the electromagnetic interaction of the wire bond and the device side wall which induces an image current at the side wall along the path of the wire bond. According to the teachings of the present invention, a process for forming a conductive coating on a semiconductor device is disclosed. The coating reduces high frequency losses associated with the device. The processes disclosed are compatible with existing semiconductor fabrication devices and advantageously provide improved uniformity and repeatability.