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Dmitri I Kulik

from Cedar Park, TX
Deceased
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Also known as:
Dmitri K Kulik, Igor Kulik, Dmtri Kulik
Phone and address:
2203 Canterbury Cv, Cedar Park, TX 78613
(586) 294-6581
Related to:
Dina Leonidovna Kulik, 89
Connected to:
Catherine D Kulik, 70Claudia M Kulik, 63Conrad J Kulik, 82Deborah S Kulik, 64Grigoriy Kulik, 78Jenna M Kulik, 35Jessica N Kulik, 36Nancy M Kulik, 71Peggy J Kulik, 75Ted Kulik, 71

Dmitri Kulik Phones & Addresses

  • 2203 Canterbury Cv, Cedar Park, TX 78613 (586) 294-6581
  • Lincoln, RI
  • Austin, TX
  • 2203 Canterbury Cv, Cedar Park, TX 78613

Work

Position: Retired

Education

Degree: Graduate or professional degree

Emails

r***a@yahoo.com

Resumes

Resumes

Dmitri Kulik Photo 1

Thin Films Process Engineer At Freescale Semiconductor

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Location:
1802 Nueces St, Austin, TX 78701
Industry:
Semiconductors
Work:
Freescale Semiconductor since Mar 2010
Thin Films Process Engineer III
Cypress Semiconductor 2005 - Jan 2009
Process Engineer Sr
Department of Physics at the University of Texas at Austin Feb 1996 - Jun 2003
Graduate Research Assistant
Advanced Micro Devices Jan 2001 - May 2001
Co-op
Education:
The University of Texas at Austin 1995 - 2003
PhD, Physics Harkivs'kij Nacional'nij Universitet im. V.N. Karazina 1984 - 1989
BS, MS, Physics
Dmitri Kulik Photo 2

Dmitri Kulik

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Publications

Us Patents

Method For Forming A Semiconductor Device Having A Cobalt Silicide

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US Patent:
20120329234, Dec 27, 2012
Filed:
Jun 22, 2011
Appl. No.:
13/166561
Inventors:
Jason T. Porter - Austin TX, US
Dmitri Kulik - Cedar Park TX, US
International Classification:
H01L 21/336
US Classification:
438303, 257E21409
Abstract:
A method includes forming a gate over a substrate having a semiconductor layer comprising silicon. The gate has a sidewall spacer on sides of the gate. The gate has a gate length less than or equal to 50 nanometers. The gate is formed of polysilicon. A cobalt layer is formed on a top of the gate and the sidewall spacer. A titanium nitride layer is formed on the cobalt layer. The titanium nitride layer has a thickness over the gate in a range of 10 to 14 nanometers. An anneal is performed to form a cobalt silicide layer on the top of the gate and leave cobalt on the sidewall spacer. An etchant is applied that etches cobalt and titanium nitride selective to cobalt silicide to the titanium nitride layer. The cobalt is on the sidewall spacer and the cobalt silicide layer. An anneal is performed to increase conductivity of the cobalt silicide layer.
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Dmitri I Kulik from Cedar Park, TXDeceased Get Report