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Deven N Raj

from Phoenix, AZ
Age ~49
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Also known as:
Devin N Raj, Davendra N Raj, Devindra Rha
Related to:
Michelle Amita Singh, 43Sailesh A Raj, 47Roneel R Raj, 47Kushma W Raj, 76Geyan M Raj, 70Meenu S Raj, 50Deo N Raj, 79
Connected to:
Aditya Raj, 39Alexander K Raj, 56Amal Raj, 39Anant Raj, 37Anila D Raj, 72Anu Raj, 43Betsy Raj, 51Bharat Raj, 67Della J Raj, 51Guna Raj, 62

Deven Raj Phones & Addresses

  • Phoenix, AZ
  • Hathaway Pines, CA
  • Daly City, CA
  • Fremont, CA
  • South San Francisco, CA

Publications

Us Patents

Sequential Plasma And Thermal Treatment

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US Patent:
20220262619, Aug 18, 2022
Filed:
Feb 9, 2022
Appl. No.:
17/667704
Inventors:
- Santa Clara CA, US
Mihaela A. Balseanu - Sunnyvale CA, US
Qi Gao - Wilmington MA, US
Rajesh Prasad - Lexington MA, US
Tomohiko Kitajima - San Jose CA, US
Chang Seok Kang - Santa Clara CA, US
Deven Matthew Raj Mittal - Middleton MA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/02
Abstract:
Methods of manufacturing memory devices are provided. The methods improve the quality of a selectively deposited silicon-containing dielectric layer. The method comprises selectively depositing a silicon-containing dielectric layer in a recessed region of a film stack. The selectively deposited silicon-containing dielectric layer is then exposed to a high-density plasma and annealed at a temperature greater than 800 C. to provide a silicon-containing dielectric film having a wet etch rate of less than 4 Å/min.

Highly Etch Selective Amorphous Carbon Film

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US Patent:
20230041963, Feb 9, 2023
Filed:
Oct 11, 2022
Appl. No.:
17/963841
Inventors:
- Santa Clara CA, US
Sarah BOBEK - Sunnyvale CA, US
Prashant Kumar KULSHRESHTHA - San Jose CA, US
Kwangduk Douglas LEE - Redwood City CA, US
Harry WHITESELL - Sunnyvale CA, US
Hidetaka OSHIO - Tokyo, JP
Dong Hyung LEE - Danville CA, US
Deven Matthew Raj MITTAL - Middleton MA, US
Scott FALK - Essex MA, US
Venkataramana R. CHAVVA - Andover MA, US
International Classification:
H01L 21/033
C23C 16/505
C23C 16/26
C23C 16/56
H01L 21/311
H01L 21/02
H01L 21/3115
Abstract:
Methods and techniques for deposition of amorphous carbon films on a substrate are provided. In one example, the method includes depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further includes implanting a dopant or the inert species into the amorphous carbon film in a second processing region. The implant species, energy, dose & temperature in some combination may be used to enhance the hardmask hardness. The method further includes patterning the doped amorphous carbon film. The method further includes etching the underlayer.

Highly Etch Selective Amorphous Carbon Film

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US Patent:
20230029929, Feb 2, 2023
Filed:
Oct 10, 2022
Appl. No.:
17/963059
Inventors:
- Santa Clara CA, US
Sarah BOBEK - Sunnyvale CA, US
Prashant Kumar KULSHRESHTHA - San Jose CA, US
Kwangduk Douglas LEE - Redwood City CA, US
Harry WHITESELL - Sunnyvale CA, US
Hidetaka OSHIO - Tokyo, JP
Dong Hyung LEE - Danville CA, US
Deven Matthew Raj MITTAL - Middleton MA, US
Scott FALK - Essex MA, US
Venkataramana R. CHAVVA - Andover MA, US
International Classification:
H01L 21/033
C23C 16/505
C23C 16/26
C23C 16/56
H01L 21/311
H01L 21/02
H01L 21/3115
Abstract:
Methods and techniques for deposition of amorphous carbon films on a substrate are provided. In one example, the method includes depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further includes implanting a dopant or the inert species into the amorphous carbon film in a second processing region. The implant species, energy, dose & temperature in some combination may be used to enhance the hardmask hardness. The method further includes patterning the doped amorphous carbon film. The method further includes etching the underlayer.

Plasma Treatment Process To Densify Oxide Layers

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US Patent:
20230030436, Feb 2, 2023
Filed:
Jul 30, 2021
Appl. No.:
17/390151
Inventors:
- Santa Clara CA, US
Mun Kyu PARK - San Jose CA, US
Jun LEE - Andover MA, US
Deven Matthew Raj MITTAL - Santa Clara CA, US
Sungho JO - Chestnut Hill MA, US
Timothy MILLER - Santa Clara CA, US
Jingmei LIANG - San Jose CA, US
Praket Prakash JHA - San Jose CA, US
Sanjay G. KAMATH - Fremont CA, US
International Classification:
H01L 21/02
Abstract:
Embodiments of the present disclosure generally relate to methods for gap fill deposition and film densification on microelectronic devices. The method includes forming an oxide layer containing silicon oxide and having an initial wet etch rate (WER) over features disposed on the substrate, and exposing the oxide layer to a first plasma treatment to produce a treated oxide layer. The first plasma treatment includes generating a first plasma by a first RF source and directing the first plasma to the oxide layer by a DC bias. The method also includes exposing the treated oxide layer to a second plasma treatment to produce a densified oxide layer. The second plasma treatment includes generating a second plasma by top and side RF sources and directing the second plasma to the treated oxide layer without a bias. The densified oxide layer has a final WER of less than one-half of the initial WER.

Highly Etch Selective Amorphous Carbon Film

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US Patent:
20200357640, Nov 12, 2020
Filed:
Jul 27, 2020
Appl. No.:
16/939316
Inventors:
- Santa Clara CA, US
Sarah BOBEK - Sunnyvale CA, US
Prashant Kumar KULSHRESHTHA - San Jose CA, US
Kwangduk Douglas LEE - Redwood City CA, US
Harry WHITESELL - Sunnyvale CA, US
Hidetaka OSHIO - Tokyo, JP
Dong Hyung LEE - Danville CA, US
Deven Matthew RAJ MITTAL - Middleton MA, US
Scott FALK - Essex MA, US
Venkataramana R. CHAVVA - Andover MA, US
International Classification:
H01L 21/033
C23C 16/505
C23C 16/26
C23C 16/56
H01L 21/311
H01L 21/02
H01L 21/3115
Abstract:
Methods and techniques for deposition of amorphous carbon films on a substrate are provided. In one example, the method includes depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further includes implanting a dopant or the inert species into the amorphous carbon film in a second processing region. The implant species, energy, dose & temperature in some combination may be used to enhance the hardmask hardness. The method further includes patterning the doped amorphous carbon film. The method further includes etching the underlayer.

Highly Etch Selective Amorphous Carbon Film

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US Patent:
20190172714, Jun 6, 2019
Filed:
Nov 13, 2018
Appl. No.:
16/188514
Inventors:
- Santa Clara CA, US
Prashant KUMAR KULSHRESHTHA - San Jose CA, US
Rajesh PRASAD - Lexington MA, US
Kwangduk Douglas LEE - Redwood City CA, US
Harry WHITESELL - Sunnyvale CA, US
Hidetaka OSHIO - Tokyo, JP
Dong Hyung LEE - Danville CA, US
Deven Matthew Raj MITTAL - Middleton MA, US
International Classification:
H01L 21/033
C23C 16/505
C23C 16/26
C23C 16/56
H01L 21/02
H01L 21/3115
H01L 21/311
Abstract:
Implementations described herein generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of amorphous carbon films on a substrate. In one implementation, a method of forming an amorphous carbon film is provided. The method comprises depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further comprises implanting a dopant or inert species into the amorphous carbon film in a second processing region. The dopant or inert species is selected from carbon, boron, nitrogen, silicon, phosphorous, argon, helium, neon, krypton, xenon or combinations thereof. The method further comprises patterning the doped amorphous carbon film. The method further comprises etching the underlayer.
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Deven N Raj from Phoenix, AZ, age ~49 Get Report