Dennis M Newns

6495854, Dec 17, 2002

Dec 30, 1999

09/475791

Dennis M. Newns - Yorktown Heights NY
Chang C. Tsuei - Chappaqua NY

International Business Machines Corporation - Armonk NY

H01L 3922

257 31, 257 32, 257 36, 505190, 505193

A method and structure for a d-wave qubit structure includes a qubit disk formed at a multi-crystal junction (or qubit ring) and a superconducting screening structure surrounding the qubit. The structure may also include a superconducting sensing loop, where the superconducting sensing loop comprises an s-wave superconducting ring. The structure may also include a superconducting field effect transistor.

6515957, Feb 4, 2003

Oct 6, 1999

09/413403

Dennis M. Newns - Yorktown Heights NY
Jonathan Z. Sun - Mohegan Lake NY

International Business Machines Corporation - Armonk NY

G11B 900

369126

Ferroelectric thin films can hold non-volatile memories with bit sizes down to 30 nm at room temperature. This invention provides a data storage system that preferably comprises an electrically conducting rotatable hard disk substrate having a ferroelectric storage layer that comprises storage cells which can be written and read along concentric recording tracks, a pivoted servo arm with a free end for movement across the recording tracks. The free end of the servo arm includes both a write head, consisting of an electrically conducting tip, and a read head, consisting of a field effect transistor (FET), held close to the disk surface. The FET has a gate electrode and is positioned on the servo arm with the gate electrode held close to the ferroelectric surface of the disk during read operations of the data storage system. Read and write operations can be performed with standard semiconductor technologies in combination with existing magnetic hard-disk servo-control architecture. Such ferroelectric hard disk data storage systems are expected to increase the areal storage density of hard disks beyond the superparamagnetic limit of around 40 GB/in.

6649929, Nov 18, 2003

May 16, 2002

10/150035

Dennis M. Newns - Yorktown Heights NY
Chang C. Tsuei - Chappaqua NY

International Business Machines Corporation - Armonk NY

H01L 3922

257 31, 257 32, 257 36, 505190, 505193

A method and structure for a d-wave qubit structure includes a qubit disk formed at a multi-crystal junction (or qubit ring) and a superconducting screening structure surrounding the qubit. The structure may also include a superconducting sensing loop, where the superconducting sensing loop comprises an s-wave superconducting ring. The structure may also include a superconducting field effect transistor.

6738954, May 18, 2004

Aug 10, 2000

09/636478

Archibald J. Allen - Grand Isle VT
Wilm E. Donath - New York NY
Alan D. Dziedzic - Newburgh NY
Mark A. Lavin - Katonah NY
Daniel N. Maynard - Craftsbury Common VT
Dennis M. Newns - Yorktown Heights NY
Gustavo E. Tellez - Essex Junction VT

International Business Machines Corporation - Armonk NY

G06F 1750

716 4, 716 1

A method of computing a manufacturing yield of an integrated circuit having device shapes includes sub-dividing the integrated circuit into failure mechanism subdivisions (each of the failure mechanism subdivisions includes one or more failure mechanism and each of the failure mechanisms includes one or more defect mechanisms), partitioning the failure mechanism subdivisions by area into partitions, pre-processing the device shapes in each partition, computing an initial average number of faults for each of the failure mechanisms and for each partition by numerical integration of an average probability of failure of each failure mechanism, (the numerical integration produces a list of defect sizes for each defect mechanism, and the computing of the initial average includes setting a maximum integration error limit, a maximum sample size for a population of each defect size, and a maximum number of allowable faults for each failure mechansim), and computing a final average number of faults for the integrated circuit by iterativelly reducing a statistical error of the initial average number of faults for each of the failure mechanisms until the statistical error is below an error limit.

6984846, Jan 10, 2006

Aug 27, 2003

10/648346

Dennis M. Newns - Yorktown Heights NY, US
David P. DiVincenzo - Tarrytown NY, US
Roger H. Koch - Amawalk NY, US
Glenn J. Martyna - Pleasantville NY, US
Jim Rozen - Peekskill NY, US
Chang Chyi Tsuei - Chappaqua NY, US

International Business Machines Corporation - Armonk NY

H01L 29/06

257 31, 257 33, 257 34, 257 36, 505190, 505193

A qubit (quantum bit) circuit includes a superconducting main loop that is electrically-completed by a serially-interconnected superconducting subloop. The subloop includes two Josephson junctions. A first coil provides a first flux that couples with the main loop but not with the subloop. A second coil provides a second flux that couples with the subloop but not with the main loop.

7221579, May 22, 2007

Jun 13, 2005

11/150188

Lia Krusin-Elbaum - Dobbs Ferry NY, US
Rudolf Ludeke - Millwood NY, US
Dennis M. Newns - Yorktown Heights NY, US
Simone Raoux - Santa Clara CA, US

International Business Machines Corporation - Armonk NY

G11C 13/04

365148, 365157, 365158

A method (and structure) for a memory cell having a phase change material (PCM) element and a heating element external to the PCM element. The heating element causes one of a presence of and an absence of a phase boundary within the PCM element for storing information in the PCM element.

7394089, Jul 1, 2008

Aug 25, 2006

11/467294

James P. Doyle - Bronx NY, US
Bruce G. Elmegreen - Golden Bridge NY, US
Lia Krusin-Elbaum - Dobbs Ferry NY, US
Chung Hon Lam - Peekskill NY, US
Xiao Hu Liu - Briarcliff Manor NY, US
Dennis M. Newns - Yorktown Heights NY, US
Christy S. Tyberg - Mahopac NY, US

International Business Machines Corporation - Armonk NY

H01L 47/00

257 4, 257209, 257529, 257E2917

An electrically re-programmable fuse (eFUSE) device for use in integrated circuit devices includes an elongated heater element, an electrically insulating liner surrounding an outer surface of the elongated heater element, corresponding to a longitudinal axis thereof, leaving opposing ends of the elongated heater element in electrical contact with first and second heater electrodes. A phase change material (PCM) surrounds a portion of an outer surface of the electrically insulating liner, a thermally and electrically insulating layer surrounds an outer surface of the PCM, with first and second fuse electrodes in electrical contact with opposing ends of the PCM. The PCM is encapsulated within the electrically insulating liner, the thermally and electrically insulating layer, and the first and second fuse electrodes.

7411818, Aug 12, 2008

Feb 7, 2007

11/672110

Bruce G. Elmegreen - Golden Bridge NY, US
Subramanian S. Iyer - Mount Kisco NY, US
Lia Krusin-Elbaum - Dobbs Ferry NY, US
Dennis M. Newns - Yorktown Heights NY, US
Byeongju Park - Plainview NY, US

International Business Machines Corporation - Armonk NY

G11C 11/00

365163, 365148, 257 4

A programmable phase change material (PCM) structure includes a heater element formed at a transistor gate level of a semiconductor device, the heater element further including a pair of electrodes connected by a thin wire structure with respect to the electrodes, the heater element configured to receive programming current passed therethrough, a layer of phase change material disposed on top of a portion of the thin wire structure, and sensing circuitry configured to sense the resistance of the phase change material.