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David J Rengering

from Cincinnati, OH
Age ~63

David Rengering Phones & Addresses

  • 5080 Rollman Estates Dr, Cincinnati, OH 45236 (989) 832-7903
  • 3009 Canterbury Dr, Midland, MI 48642 (989) 832-9881

Work

Company: Dow Jul 2019 Position: Retired

Education

Degree: Bachelors, Bachelor of Science School / High School: University of Cincinnati 1980 to 1985 Specialities: Chemical Engineering

Skills

Supply Chain Management • Logistics • Manufacturing • Chemical Process Engineering • Change Management • Silicones • Cross Functional Team Leadership

Industries

Chemicals

Resumes

Resumes

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David Rengering

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Location:
10330 Hercules Rd, Freeland, MI 48623
Industry:
Chemicals
Work:
Dow
Retired

Hemlock Semiconductor Corporation May 2011 - Aug 2015
Site Manager

Dow Corning May 2011 - Aug 2015
Director, Global Engineering

Dow Corning 2008 - Apr 2011
Capital Portfolio Manager

Dow Corning 2004 - 2008
Process Engineering Manager
Education:
University of Cincinnati 1980 - 1985
Bachelors, Bachelor of Science, Chemical Engineering
Skills:
Supply Chain Management
Logistics
Manufacturing
Chemical Process Engineering
Change Management
Silicones
Cross Functional Team Leadership

Business Records

Name / Title
Company / Classification
Phones & Addresses
David J. Rengering
Manager
Hsc
Nonclassifiable Establishments
12334 Geddes Rd, Hemlock, MI 48626

Publications

Us Patents

Treatment Of Alkoxysilanes

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US Patent:
47329963, Mar 22, 1988
Filed:
Feb 10, 1987
Appl. No.:
7/013742
Inventors:
Kenneth W. Moorhead - Midland MI
Kirsten L. Reading - Midland MI
David J. Rengering - Midland MI
Antony P. Wright - Mills Township, Midland County MI
Assignee:
Dow Corning Corporation - Midland MI
International Classification:
C07F 708
C07F 718
US Classification:
556466
Abstract:
A process in which the residual chloride impurities in crude alkoxysilanes with atmospheric boiling points below 130. degree. C. are reduced in order to render the resultant alkoxysilanes more suitable as a starting intermediate for the preparation of other chemical compounds and for use in electronics applications is described. The essence of the process is contacting the alkoxysilane with an alkaline metal compound using superatmospheric pressure to achieve a treatment temperature of greater than 130. degree. C.
David J Rengering from Cincinnati, OH, age ~63 Get Report