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David W Minsek

from New Milford, CT
Age ~62

David Minsek Phones & Addresses

  • 20 Skyview Dr, New Milford, CT 06776 (860) 355-9445
  • 2 Skyview Dr, New Milford, CT 06776
  • 2O Skyview Dr, New Milford, CT 06776
  • 38 Meadow Ln, Pleasantville, NY 10570
  • 131 Charlesbank Rd, Newton, MA 02458
  • 7 Faxon St, Newton, MA 02458
  • 412 Chestnut Ave, Mamaroneck, NY 10543
  • Weymouth, MA
  • Watertown, MA

Public records

Vehicle Records

David Minsek

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Address:
20 Skyview Dr, New Milford, CT 06776
Phone:
(860) 355-9445
VIN:
5NPDH4AE9BH027733
Make:
HYUNDAI
Model:
ELANTRA
Year:
2011

Publications

Us Patents

Ph Buffered Compositions Useful For Cleaning Residue From Semiconductor Substrates

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US Patent:
6773873, Aug 10, 2004
Filed:
Mar 25, 2002
Appl. No.:
10/105704
Inventors:
Ma. Fatima Seijo - Hayward CA
William A. Wojtczak - Austin TX
David Bernhard - Newton CT
Thomas H. Baum - New Fairfield CT
David Minsek - Pleasantville NY
Assignee:
Advanced Technology Materials, Inc. - Danbury CT
International Classification:
G03F 742
US Classification:
430329, 430331, 134 2, 134 3, 510175, 510176, 510255, 510257, 510259, 510178, 510265
Abstract:
A semi-aqueous cleaning formulation useful for removing particles from semiconductor wafer substrates formed during a dry etching process for semiconductor devices, the cleaning formulation comprising a buffering system a polar organic solvent, and a fluoride source.

Deep-Uv Anti-Reflective Resist Compositions

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US Patent:
6824952, Nov 30, 2004
Filed:
Sep 13, 2001
Appl. No.:
09/951718
Inventors:
David W. Minsek - Pleasantville NY
Daniel J. Nawrocki - Worcester MA
Assignee:
MicroChem Corp. - Newton MA
International Classification:
G03C 172
US Classification:
4302701, 4302711, 430320, 430156
Abstract:
A composition useful as a lift-off resist comprising at least one solvent, at least one polydimethylglutarimide (PMGI) resin and at least one selected deep-UV absorbing molecule of Formula I, where X is an aromatic or aliphatic bridging group, and Ar and Arâ are aryl groups wherein at least one Ar or Arâ contains one or more hydroxyl or carboxylic acid groups.

Compositions And Methods For High-Efficiency Cleaning/Polishing Of Semiconductor Wafers

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US Patent:
7119052, Oct 10, 2006
Filed:
Jun 24, 2003
Appl. No.:
10/602172
Inventors:
Michael B. Korzenski - Danbury CT, US
Chongying Xu - New Milford CT, US
Thomas H. Baum - New Fairfield CT, US
David Minsek - Pleasantville NY, US
Eliodor G. Ghenciu - King of Prussia PA, US
Assignee:
Advanced Technology Materials, Inc. - Danbury CT
International Classification:
B01D 11/00
G03F 7/42
US Classification:
510175, 510176, 510255, 438906, 134 36, 134902, 134 34
Abstract:
A composition including supercritical fluid and at least one additive selected from fluoro species, and primary and/or secondary amines, optionally with co-solvent, low k material attack-inhibitor(s) and/or surfactant(s). The composition has particular utility for cleaning of semiconductor wafers to remove post-ashing residues therefrom.

Treatment Of Semiconductor Substrates Using Long-Chain Organothiols Or Long-Chain Acetates

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US Patent:
7326673, Feb 5, 2008
Filed:
Nov 25, 2002
Appl. No.:
10/303450
Inventors:
Chongying Xu - New Milford CT, US
David W. Minsek - Pleasantville NY, US
Thomas H. Baum - New Fairfield CT, US
Matthew Healy - Norwalk CT, US
Assignee:
Advanced Technology Materials, Inc. - Danbury CT
International Classification:
C25F 3/30
C11D 3/34
C11D 3/30
US Classification:
510175, 510176, 510254, 134 12, 134 13, 134 10, 134 11
Abstract:
Chemical formulations and methods for removing unwanted material, such as unexposed photoresist, metal oxides, CMP residue, and the like, from semiconductor wafers or other substrates. The formulations utilize a supercritical fluid-based cleaning composition, which may further include (I) co-solvent(s), (II) surfactant(s), (III) chelating agent(s), and/or (IV) chemical reactant(s).

Oxidizing Aqueous Cleaner For The Removal Of Post-Etch Residues

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US Patent:
7922824, Apr 12, 2011
Filed:
Oct 4, 2006
Appl. No.:
12/089288
Inventors:
David W. Minsek - New Milford CT, US
Michael B. Korzenski - Danbury CT, US
Martha M. Rajaratnam - Ridgefield CT, US
Assignee:
Advanced Technology Materials, Inc. - Danbury CT
International Classification:
C11D 1/88
US Classification:
134 13, 510175, 510176
Abstract:
An oxidizing aqueous cleaning composition and process for cleaning post-plasma etch residue and/or hardmask material from a microelectronic device having said residue thereon. The oxidizing aqueous cleaning composition includes at least one oxidizing agent, at least one oxidizing agent stabilizer comprising an amine species selected from the group consisting of primary amines, secondary amines, tertiary amines and amine-N-oxides, optionally at least one co-solvent, optionally at least one metal-chelating agent, optionally at least one buffering species, and water. The composition achieves highly efficacious cleaning of the residue material from the microelectronic device while simultaneously not damaging the interlevel dielectric and metal interconnect material also present thereon.

Photoresist Removal

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US Patent:
8236485, Aug 7, 2012
Filed:
Mar 14, 2003
Appl. No.:
10/389214
Inventors:
David W. Minsek - Pleasantville NY, US
Melissa K. Murphy - Danbury CT, US
David Daniel Bernhard - Newtown CT, US
Thomas H. Baum - New Fairfield CT, US
Assignee:
Advanced Technology Materials, Inc. - Danbury CT
International Classification:
G03F 7/42
B08B 3/04
US Classification:
430329, 510176, 510402, 510503, 134 34, 134 13, 438906
Abstract:
Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0. 1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.

Light Induced Plating Of Metals On Silicon Photovoltaic Cells

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US Patent:
8337942, Dec 25, 2012
Filed:
Jul 22, 2011
Appl. No.:
13/188615
Inventors:
David W. Minsek - New Milford CT, US
Lev Taytsas - Naugatuck CT, US
International Classification:
B05D 5/06
US Classification:
427 74
Abstract:
A method and composition for plating metal contacts on photovoltaic solar cells is described. The cell is immersed in an aqueous bath containing platable metal ions and a solubilizing agent for aluminum or aluminum alloy ions from the back side of the solar cell. The cell is then exposed to light, causing the two sides of the cell to become oppositely charged. The metal ions are plated without requiring an external electrical contact.

Composition And Process For Post-Etch Removal Of Photoresist And/Or Sacrificial Anti-Reflective Material Deposited On A Substrate

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US Patent:
8338087, Dec 25, 2012
Filed:
Mar 3, 2004
Appl. No.:
10/792038
Inventors:
Melissa K. Rath - Danbury CT, US
David D. Bernhard - Newtown CT, US
David Minsek - New Milford CT, US
Michael B. Korzenski - Danbury CT, US
Thomas H. Baum - New Fairfield CT, US
Assignee:
Advanced Technology Materials, Inc - Danbury CT
International Classification:
G03F 7/32
G03F 7/42
US Classification:
430331, 134 2
Abstract:
A composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) materials from a substrate having such material(s) thereon. The composition includes a base component, such as a quaternary ammonium base in combination with an alkali or alkaline earth base, or alternatively a strong base in combination with an oxidant. The composition may be utilized in aqueous medium, e. g. , with chelator, surfactant, and/or co-solvent species, to achieve high-efficiency removal of photoresist and/or SARC materials in the manufacture of integrated circuitry, without adverse effect on metal species on the substrate, such as copper, aluminum and/or cobalt alloys, and without damage to SiOC-based dielectric materials employed in the semiconductor architecture.
David W Minsek from New Milford, CT, age ~62 Get Report