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David Kennedy Homol

from Umatilla, FL
Age ~56
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Also known as:
David K Homol, David K Hamol, Dave Homol, David Homol Kennedy, David Hummel
Related to:
Wayne HomolDanielle L Walker, 45Danielle L Walker, 60Sherell Walker, 55William T Walker, 81Donald W Homol, 85Walker E BlountJennifer A Homol, 52Jennifer A Homol, 53Jessica Anna Homol, 30Dillon P HomelHanna T Homol, 61Maria Primke, 84Jeffery M Walter, 64Lindsay Smith, 79Jefrey R Walker, 74Mary M Walker, 73Ruby J Walker
Connected to:
Ben R Homola, 69Carl F Homola, 60David M Homola, 35Jaeson W Homola, 39Jonathan Homola, 36Richard F Homola, 80Roman M Homola, 52Timothy A Homolak, 77Angela M Homolash, 37Beth A Homoleski, 46

David Homol Phones & Addresses

  • Umatilla, FL
  • Bartow, FL
  • Panama City, FL
  • 7805 Charles Place Dr, Kernersville, NC 27284 (336) 643-1438 (321) 799-2300
  • 4805 Charles Place Dr, Kernersville, NC 27284
  • Oak Ridge, NC
  • Stokesdale, NC
  • Chandler, AZ
  • Cocoa Beach, FL
  • Tampa, FL
  • Cary, NC
  • Greensboro, NC
  • Superior, CO

Work

Company: Microsemi inc 2013 Position: Senior rfic design consulting engineer

Education

School / High School: NORTH CAROLINA STATE UNIVERSITY- Raleigh, NC 1999 Specialities: M.S. in Electrical Engineering

Resumes

Resumes

David Homol Photo 1

David Homol Kernersville, NC

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Work:
MICROSEMI INC

2013 to 2000
Senior RFIC Design Consulting Engineer
SKYWORKS SOLUTIONS, INC
Greensboro, NC
2008 to 2013
Principal Electrical Design Engineer
RF MICRO DEVICES
Greensboro, NC
2006 to 2008
Staff RFIC Design Lead Engineer, RSBU and NCPL R&D Design Leader
SIRENZA MICRODEVICES
Broomfield, CO
2005 to 2006
Staff RFIC Design Engineer, Broadband and Signal Processing IC R&D
MOTOROLA
Tempe, AZ
2000 to 2004
Senior IC Design Engineer, Radio Products Division, Wireless and Mobile Systems Group
ERICSSON
Research Triangle Park, NC
1997 to 2000
Staff Engineer, RF and Analog IC Designer, Advanced R&D RF and Analog
Education:
NORTH CAROLINA STATE UNIVERSITY
Raleigh, NC
1999
M.S. in Electrical Engineering
UNIVERSITY OF SOUTH FLORIDA
Tampa, FL
1996
B.S. in Electrical Engineering
David Homol Photo 2

David Homol

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Publications

Wikipedia References

David Homol Photo 3

David Homoláč

Us Patents

Apparatus And Method For Enabled Switch Detection

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US Patent:
8008970, Aug 30, 2011
Filed:
Jul 27, 2010
Appl. No.:
12/844511
Inventors:
David K. Homol - Kernersville NC, US
Karl J Couglar - Oak Ridge NC, US
Hua Wang - High Point NC, US
Ryan M Pratt - High Point NC, US
Assignee:
Skyworks Solutions, Inc. - Woburn MA
International Classification:
H03F 1/14
US Classification:
330 51, 330296, 330297
Abstract:
Apparatuses and methods for enabled switch detection are disclosed. In one embodiment, an apparatus includes a complimentary metal oxide semiconductor (CMOS) switch having a gate, a drain, a source, and a well. The source and drain are formed in the well, and the gate is formed adjacent the well between the source and drain. The source is configured to receive a radio frequency signal from a first power amplifier. The apparatus further includes a switch enable detect block configured to compare a signal indicative of the gate voltage of the first switch to a first reference signal and to generate an output comparison signal based at least partly on the comparison. The apparatus further includes a power amplifier bias control block configured to enable the first power amplifier based at least partly on the output comparison signal from the switch sense block.

Apparatus And Method For Disabling Well Bias

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US Patent:
8330530, Dec 11, 2012
Filed:
Jul 27, 2010
Appl. No.:
12/844491
Inventors:
David K Homol - Kernersville NC, US
Karl J Couglar - Oak Ridge NC, US
Assignee:
Skyworks Solutions, Inc. - Woburn MA
International Classification:
H03K 3/01
US Classification:
327534, 327427
Abstract:
Apparatuses and methods for disabling well bias are disclosed. In one embodiment, an apparatus includes a complimentary metal oxide semiconductor (CMOS) switch having a gate, a drain, a source, and a well. The source and drain are formed in the well. The gate is formed adjacent the well between the source and drain, and the source is configured to receive a bias voltage from a power amplifier. The apparatus further includes a well bias control block for biasing the well voltage of the first switch and a disable circuit for disabling the well bias control block so as to prevent the well bias control block from biasing the well. The well bias control block can bias the well voltage of the first switch to at least two voltage levels.

Voltage Distribution For Controlling Cmos Rf Switch

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US Patent:
8368463, Feb 5, 2013
Filed:
Jul 27, 2010
Appl. No.:
12/844640
Inventors:
David K. Homol - Kernersville NC, US
Ryan M. Pratt - High Point NC, US
Hua Wang - High Point NC, US
Assignee:
Skyworks Solutions, Inc. - Woburn MA
International Classification:
H03F 1/14
US Classification:
330 51, 330127, 330296, 455 91, 4551271, 257299
Abstract:
Disclosed are voltage distribution device and method for controlling CMOS-based devices for switching radio frequency (RF) signals. In certain RF devices such as mobile phones, providing different amplification modes can yield performance advantages. For example, a capability to transmit at low and high power modes typically results in an extended battery life, since the high power mode can be activated only when needed. Switching between such amplification modes can be facilitated by one or more switches formed in an integrated circuit and configured to route RF signal to different amplification paths. In certain embodiments, such RF switches can be formed as CMOS devices, and can be based on triple-well structures. In certain embodiments, various bias voltages applied to such a CMOS RF switch can be facilitated by a voltage distribution component.

High Linearity Cmos Rf Switch Passing Large Signal And Quiescent Power Amplifier Current

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US Patent:
8369805, Feb 5, 2013
Filed:
Jul 27, 2010
Appl. No.:
12/844246
Inventors:
David K. Homol - Kernersville NC, US
Ryan M. Pratt - High Point NC, US
Assignee:
Skyworks Solutions, Inc. - Woburn MA
International Classification:
H04B 1/04
H01L 27/088
US Classification:
4551271, 4551273, 257392
Abstract:
Disclosed are high linearity CMOS-based devices capable of passing large signal and quiescent power amplifier current for switching radio frequency (RF) signals, and methods for biasing such devices. In certain RF devices such as mobile phones, providing different amplification modes can yield performance advantages. For example, a capability to transmit at low and high power modes typically results in an extended battery life, since the high power mode can be activated only when needed. Switching between such amplification modes can be facilitated by one or more switches formed in an integrated circuit and configured to route RF signal to different amplification paths. In certain embodiments, such RF switches can be formed as CMOS devices, and can be based on triple-well structures. In certain embodiments, a bias voltage applied to an isolated well of such a triple-well structure can be substantially tied to a source voltage coupled to source and drain, so as to yield desired performance features such as high amplification linearity even when the source voltage changes.

Apparatus And Method For Diffusion Sensing

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US Patent:
8421438, Apr 16, 2013
Filed:
Jul 27, 2010
Appl. No.:
12/844301
Inventors:
Ryan M Pratt - High Point NC, US
Karl J Couglar - Oak Ridge NC, US
David K Homol - Kernersville NC, US
Assignee:
Skyworks Solutions, Inc. - Woburn MA
International Classification:
G01R 19/00
G01R 27/08
US Classification:
324 7611, 324713, 702 64
Abstract:
Apparatuses and methods for diffusion sensing are disclosed. In one embodiment, an apparatus includes a complimentary metal oxide semiconductor (CMOS) switch and a switch sense block. The switch includes a gate, a drain, a source, and a well. The source and drain are formed in the well. The gate is formed adjacent the well between the source and drain, and the source is configured to receive a bias voltage from a power amplifier. The switch sense block is configured to measure a signal indicative of the voltage of at least one of the source or drain voltage of the switch and to generate an output signal based on the measurement.

Apparatus And Method For Well Buffering

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US Patent:
8461897, Jun 11, 2013
Filed:
Jul 27, 2010
Appl. No.:
12/844449
Inventors:
David K Homol - Kernersville NC, US
Karl J Couglar - Oak Ridge NC, US
Assignee:
Skyworks Solutions, Inc. - Woburn MA
International Classification:
H03L 5/00
US Classification:
327333, 326 62, 326 81
Abstract:
Apparatuses and methods for well buffering are disclosed. In one embodiment, an apparatus includes a complimentary metal oxide semiconductor (CMOS) switch having a gate, a drain, a source, and a well. The source and drain are formed in the well, and the gate is formed adjacent the well between the source and drain. The source is configured to receive a bias voltage from a power amplifier. The apparatus further includes a gate bias control block for biasing the gate voltage of the switch, a well bias control block for biasing the well voltage of the switch, and a buffer circuit for increasing the impedance between the well bias control block and the well of the switch.

Apparatus And Method For Variable Voltage Distribution

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US Patent:
20110298280, Dec 8, 2011
Filed:
Jul 27, 2010
Appl. No.:
12/844638
Inventors:
David K. Homol - Kernersville NC, US
Karl J. Couglar - Oak Ridge NC, US
Ryan M. Pratt - High Point NC, US
Assignee:
Skyworks Solutions, Inc - Woburn MA
International Classification:
H02M 3/157
US Classification:
307 31
Abstract:
Apparatus and methods for providing regulated voltages are disclosed. Using a single voltage regulator, a plurality of regulated voltages can be generated with a voltage distribution function. In addition, variable voltage control elements can be used to adjust a regulated voltage, thereby providing a variable regulated voltage. Together, voltage distribution and variable voltage control can create variable voltage distribution of regulated voltages. These regulated voltages can be used in a variety of applications, for example, as a bias voltage for a power amplifier.

Apparatus And Method For Voltage Distribution

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US Patent:
20110298435, Dec 8, 2011
Filed:
Jul 27, 2010
Appl. No.:
12/844320
Inventors:
David K. Homol - Kernersville NC, US
Ryan M. Pratt - High Point NC, US
Assignee:
Skyworks Solutions, Inc. - Woburn MA
International Classification:
G05F 1/10
US Classification:
323282
Abstract:
Apparatus and methods for providing regulated voltages are disclosed. Using a single voltage regulator, a plurality of regulated voltages can be generated with a voltage distribution function. These regulated voltages can be used in a variety of applications, for example, as a bias voltage for a power amplifier. In addition, the distributed regulated voltages can implement a variety of functions, such as selectively enabling or disabling power amplifiers.
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David Kennedy Homol from Umatilla, FL, age ~56 Get Report