David W Forbes

6608950, Aug 19, 2003

Feb 14, 2001

09/783692

Elizabeth T. Kunkee - Manhattan Beach CA
David V. Forbes - Oregon WI
James E. Leight - San Ramon CA
Mahmoud Fallahi - Tucson AZ

Northrop Grumman Corporation - Los Angeles CA

G02B 642

385 39, 385130

An integrated optoelectronic device ( ) includes a substrate ( ), at least one optoelectronic component ( ) provided on the substrate ( ), and a waveguide ( ) provided on the substrate ( ) and optically connected to the at least one optoelectronic component ( ). The waveguide ( ) is made of a sol-gel glass. A method for making the integrated optoelectronic device ( ) includes the steps of providing a substrate ( ), providing at least one optoelectronic component ( ) on the substrate ( ), and providing at least one sol-gel glass waveguide ( ) on the substrate ( ) and optically connected to the at least one optoelectronic component ( ).

6933583, Aug 23, 2005

Apr 10, 2003

10/411873

Elizabeth T. Kunkee - Manhattan Beach CA, US
David V. Forbes - Oregon WI, US
David C. Scott - Lakewood CA, US
Timothy A. Vang - San Dimas CA, US
Wenshen Wang - Torrance CA, US

Northrop Grumman Corporation - Los Angeles CA

G02F001/35

257431, 257 14, 257 21, 385 2, 385 3

A coupled quantum well Mach-Zehnder modulator that employs a push-pull structure to reduce the modulation voltage. The Mach-Zehnder modulator includes a first arm having a first PIN semiconductor device and a second arm having a second PIN semiconductor device. The intrinsic layers of the PIN devices include a coupled quantum well structure to provide an opposite index of refraction change for different DC bias voltages. An RF signal used to modulate the light beam is applied to the two arms in phase and causes the index of refraction in the intrinsic layers of the two PIN devices to change in opposite directions so that a push-pull type drive is achieved without requiring 180 out-of-phase RF drive signal.