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Asmita R Dani

from San Jose, CA
Age ~37
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Also known as:
Asmita Rajiv Dani, Dani Asmita
Connected to:
Aditya A Dani, 36Amish C Dani, 44Ferenc Dani, 89Kaushik J Dani, 60Kenneth M Dani, 46Mamta Dani, 48Manisha A Dani, 55Nipa S Dani, 54Pallavi Dani, 46Radhika N Dani, 46

Asmita Dani Phones & Addresses

  • San Jose, CA
  • Superior, CO
  • Boulder, CO
  • Denver, CO
  • Superior, CO

Work

Company: Reach labs May 2020 Position: Rf lead

Education

Degree: Doctorates, Doctor of Philosophy School / High School: University of Colorado Boulder 2011 to 2013 Specialities: Engineering, Design, Philosophy

Skills

Rf Power Amplifier Design • Analog Design Simulations • Matlab • Advanced System Design Ads • Awr Microwave Office • 3D Em Simulations • System Design and Test • Labview • Rf Circuits • Latex • Simulink • Circuit Design • Pspice • Ansys • Simulations • Antennas • Microwave • Network Analyzer • Testing • Characterization • Analog Circuit Design • Radio Frequency • Semiconductors • Spectrum Analyzer • Rf

Languages

Marathi • Hindi • English

Interests

Design of Small Signal • Economic Empowerment • Medical and Space Applications • Education • Rfics and Mmics Design • Poverty Alleviation • Human Rights • Testing and Analysis of Rf Systems • Low Noise and Power Amplifiers

Industries

Semiconductors

Resumes

Resumes

Asmita Dani Photo 1

Rf Lead

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Location:
San Francisco, CA
Industry:
Semiconductors
Work:
Reach Labs
Rf Lead
Stanford University Aug 2019 - Nov 2019
Entrepreneurship I2M Stanford
Rigetti Computing Aug 2019 - Nov 2019
Quantum Rf Packaging Engineer
Metawave Corporation Sep 2018 - Jan 2019
Principal Mmic Design Engineer
Metawave Corporation Nov 2017 - Jan 2019
Senior Staff Engineer
Education:
University of Colorado Boulder 2011 - 2013
Doctorates, Doctor of Philosophy, Engineering, Design, Philosophy University of Colorado Boulder 2008 - 2010
Master of Science, Masters, Communications, Communication, Engineering, Electronics University of Mumbai 2004 - 2008
Bachelors, Bachelor of Technology, Communications, Engineering, Electronics Chatrapati Sahuji Maharaj Kanpur University, Kanpur
Atomic Energy Junior College
Skills:
Rf Power Amplifier Design
Analog Design Simulations
Matlab
Advanced System Design Ads
Awr Microwave Office
3D Em Simulations
System Design and Test
Labview
Rf Circuits
Latex
Simulink
Circuit Design
Pspice
Ansys
Simulations
Antennas
Microwave
Network Analyzer
Testing
Characterization
Analog Circuit Design
Radio Frequency
Semiconductors
Spectrum Analyzer
Rf
Interests:
Design of Small Signal
Economic Empowerment
Medical and Space Applications
Education
Rfics and Mmics Design
Poverty Alleviation
Human Rights
Testing and Analysis of Rf Systems
Low Noise and Power Amplifiers
Languages:
Marathi
Hindi
English

Publications

Us Patents

Distributed Varactor Network With Expanded Tuning Range

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US Patent:
20210167746, Jun 3, 2021
Filed:
Apr 19, 2019
Appl. No.:
17/047965
Inventors:
Asmita DANI - Palo Alto CA, US
- Carlsbad CA, US
Asmita Dani - Carlsbad CA, US
International Classification:
H03H 7/18
H01Q 3/36
H04B 7/06
Abstract:
Examples disclosed herein relate to a phase shift network system including a phase shift network having a plurality of distributed varactor networks, each distributed varactor network capable of providing a phase shift range in a millimeter wave spectrum, and a plurality of switches coupled to the phase shift network, each switch to activate a distributed varactor network from the plurality of distributed varactor networks to generate a given phase shift within the phase shift range.

Vector Modulator For Millimeter Wave Applications

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US Patent:
20200099350, Mar 26, 2020
Filed:
Sep 18, 2019
Appl. No.:
16/575207
Inventors:
- Palo Alto CA, US
Asmita DANI - San Jose CA, US
International Classification:
H03F 3/193
H03F 1/02
H03F 3/213
H03G 3/30
H04B 1/04
Abstract:
Examples disclosed herein relate to a vector modulator architecture, having an input splitter network configured to receive a radio frequency (RF) input signal and generate a plurality of quadrature signals at different phases, a variable gain amplifier (VGA) stage coupled to the input splitter network and configured to apply a first gain to one or more of the plurality of quadrature signals, a power combiner coupled to the VGA stage and configured to combine the plurality of quadrature signals into a combined RF signal, and a power amplifier (PA) stage coupled to the power combiner and configured to apply a second gain to the combined RF signal and generate an output RF signal. Other examples disclosed herein relate to an antenna system for autonomous vehicles and a radar system for use in an autonomous driving vehicle.

Dynamic Supply Modulation Power Amplifier Architecture For Millimeter Wave Applications

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US Patent:
20200044336, Feb 6, 2020
Filed:
Aug 2, 2019
Appl. No.:
16/530970
Inventors:
- Palo Alto CA, US
Asmita DANI - San Jose CA, US
International Classification:
H01Q 3/34
G01S 7/03
G01S 13/93
H03G 3/30
H03F 3/21
H03F 3/68
G05D 1/02
B60W 50/00
Abstract:
Examples disclosed herein relate to a dynamic supply modulation power amplifier architecture for millimeter wave applications. The architecture includes phase shifters coupled to a power input port, power amplifiers coupled to respective power output ports, variable gain amplifiers coupled to the phase shifters and to the power amplifiers and are configured to supply dynamically varying input power to the power amplifiers. The architecture includes a first look-up table coupled to the variable gain amplifiers to control the variable gain amplifiers. The architecture also includes a second look-up table coupled to the power amplifiers, where each of the power amplifiers is supply modulated by active drain voltage modulation controlled by the second look-up table and variable input power from the variable gain amplifiers. Other examples disclosed herein include a radar system for use in an autonomous driving vehicle and an analog beamforming antenna for millimeter wave applications.

Doherty Power Amplifier With Integrated Second Harmonic Injection

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US Patent:
20190348953, Nov 14, 2019
Filed:
May 8, 2019
Appl. No.:
16/407108
Inventors:
- Palo Alto CA, US
Asmita Dani - Palo Alto CA, US
International Classification:
H03F 1/02
H03F 3/24
Abstract:
Examples disclosed herein relate to a Doherty Power Amplifier (“DPA”) with integrated second harmonic injection. The DPA includes an amplifier circuit having a carrier amplifier and a peaking amplifier, and a combiner network coupled to the amplifier circuit, the combiner network having a plurality of transmission lines and a LC resonant circuit to inject a second harmonic from the carrier amplifier into the peaking amplifier.

Pcb Based Semiconductor Package With Impedance Matching Network Elements Integrated Therein

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US Patent:
20170245359, Aug 24, 2017
Filed:
Feb 18, 2016
Appl. No.:
15/046923
Inventors:
- Neubiberg, DE
Cristian Gozzi - Santa Clara CA, US
Asmita Dani - San Jose CA, US
International Classification:
H05K 1/02
H05K 1/18
H05K 1/11
H01L 23/498
H05K 1/03
Abstract:
A semiconductor package includes a metal baseplate having a die attach region and a peripheral region, a transistor die having a reference terminal attached to the die attach region and an RF terminal facing away from the baseplate, and a multilayer circuit board having a first side attached to the peripheral region and a second side facing away from the baseplate. The multilayer circuit board includes two embedded electrically conductive layers that are separated from the first and second sides by layers of composite fiber, and an embedded dielectric layer disposed between the two embedded electrically conductive layers. The embedded dielectric layer has a higher dielectric constant than the layers of composite fiber.
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Asmita R Dani from San Jose, CA, age ~37 Get Report