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Dane E Bailey

from Colleyville, TX
Age ~62
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Also known as:
Dane Elbert Bailey, Dave Bailey
Phone and address:
6106 Hunter Ln, Colleyville, TX 76034
Related to:
Gordon S Bailey, 58Betty J Bailey, 43Cathy A Bailey, 60Morgan Bailey, 34Wayne E Bailey, 85Catherine H Hu, 59Laura Catherine BaileyLaura C Bailey, 32
Connected to:
Abraham M Bailey, 39Adriana M Bailey, 86Ahmed J Bailey, 60Albree L Bailey, 38Alexis Bailey, 47Alison Bailey, 49Allyson Bailey, 44Amanda Bailey, 42Amber Bailey, 36Amillah S Bailey, 49

Dane Bailey Phones & Addresses

  • 6106 Hunter Ln, Colleyville, TX 76034
  • Mc Kinney, TX
  • Austin, TX
  • Dallas, TX
  • Garland, TX
  • 2300 Bennington, McKinney, TX 75070 (214) 578-0313

Work

Position: Service Occupations

Education

Degree: Associate degree or higher

Resumes

Resumes

Dane Bailey Photo 1

Owner

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Location:
9113 Bedford Ln, Mckinney, TX 75071
Industry:
Automotive
Work:
Pdf Solutions Jan 2008 - May 2013
Consultant
Davenport Motor Company Jan 2008 - May 2013
Owner
Texas Instruments Mar 2004 - Jan 2008
Qra Section Manager
Texas Instruments 1999 - 2001
Engineering Section Manager
Twinstar Semiconductor 1995 - 1998
Engineering Section Manager
Education:
The University of Texas at Austin 1985 - 1987
Masters, Master of Arts, Physics The University of Texas at Austin 1979 - 1983
Bachelors, Bachelor of Science, Electrical Engineering
Skills:
Physics
Managed Print Services
Dane Bailey Photo 2

Dane Bailey

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Dane Bailey Photo 3

Dane Bailey

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Business Records

Name / Title
Company / Classification
Phones & Addresses
Dane Bailey
STRATEGERY MANAGEMENT, LLC
Management Services
2300 Bennington, McKinney, TX 75070
Dane Bailey
STRATEGERY REAL ESTATE HOLDINGS, LLC
1817 Lakeshore Ct, McKinney, TX 75070
2300 Bennington, McKinney, TX 75070

Publications

Us Patents

Method For In-Situ Doping Of Deposited Silicon

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US Patent:
52565661, Oct 26, 1993
Filed:
May 8, 1991
Appl. No.:
7/697635
Inventors:
Dane E. Bailey - Dallas TX
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 21469
H01L 21223
US Classification:
437233
Abstract:
A method for in-situ doping of deposited silicon is disclosed. The method utilizes low temperature of approximately 560. degree. C. , low pressure of approximately 300 mTorr, and low phosphine to silane ratio of approximately 0. 0008 to form phosphorus doped silicon. The method is manufacturable in an automated LPCVD reactor. It allows relatively uniform defect free silicon films of low resistivity and good conformality and step coverage to be deposited at sufficient deposition rates over large semiconductor wafer lots for high wafer throughput.

Vertical Lpcvd Reactor

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US Patent:
50762060, Dec 31, 1991
Filed:
Oct 31, 1990
Appl. No.:
7/606234
Inventors:
Dane E. Bailey - Dallas TX
Thomas E. Tang - Dallas TX
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
C23C 1600
US Classification:
118724
Abstract:
A vertical low pressure chemical vapor deposition, LPCVD, reactor that may be used to form deposition films on semiconductor wafers is disclosed. The vertical LPCVD reactor has a reaction chamber with a top portion and a bottom portion. A furnace heats the reaction chamber. Deposition gases are introduced into the bottom portion of the reaction chamber by a gas tube having a substantial portion heated by the furnace. Deposition gases are introduced into the top portion of the reaction chamber by a gas tube that is shaped so that a substantial portion of it overlies the top portion of the reaction chamber and is heated by the furnace. By heating the substantial portion of the gas tube overlying the top portion of the reaction chamber, the deposition gases passing through this tube are heated before they enter the top portion of the reaction chamber. This improves the uniformity of deposited films on semiconductor wafers residing in the top portion of the reaction chamber.
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Dane E Bailey from Colleyville, TX, age ~62 Get Report