Search

Colby Daniel Mattson

from Santa Cruz, CA
Age ~72

Colby Mattson Phones & Addresses

  • 1111 Hope Way, Santa Cruz, CA 95062
  • 218 Owen St, Santa Cruz, CA 95062 (831) 426-7549
  • 216 Owen St, Santa Cruz, CA 95062
  • 1933 29Th St, San Diego, CA 92102

Work

Company: Charlie & company design Nov 2012 Address: Greater Minneapolis-St. Paul Area Position: Associate/designer

Education

School / High School: University of Minnesota-Twin Cities 2001 to 2004

Skills

Residential Design • Remodeling • SketchUp • Bentley Microstation • AutoCAD • Adobe Creative Suite • Microsoft Office • Site Design • Programming • Photoshop

Industries

Architecture & Planning

Resumes

Resumes

Colby Mattson Photo 1

Associate/Designer At Charlie & Co Design, Llc

View page
Position:
Associate/Designer at Charlie & Company Design
Location:
Minneapolis, Minnesota
Industry:
Architecture & Planning
Work:
Charlie & Company Design - Greater Minneapolis-St. Paul Area since Nov 2012
Associate/Designer

TEA2 Architects - Greater Minneapolis-St. Paul Area May 2004 - Nov 2012
Project Designer/Manager

TEA2 Architects - Greater Minneapolis-St. Paul Area May 1997 - May 2004
Architectural Intern
Education:
University of Minnesota-Twin Cities 2001 - 2004
University of Minnesota-Twin Cities 1994 - 1998
Skills:
Residential Design
Remodeling
SketchUp
Bentley Microstation
AutoCAD
Adobe Creative Suite
Microsoft Office
Site Design
Programming
Photoshop

Publications

Us Patents

System And Method For Preferential Chemical Vapor Deposition

View page
US Patent:
20030113451, Jun 19, 2003
Filed:
Nov 1, 2002
Appl. No.:
10/285966
Inventors:
Bruce Mayer - Soquel CA, US
Nitin Ingle - Campbell CA, US
Robert Murphy - Santa Cruz CA, US
Colby Mattson - Santa Cruz CA, US
Samuel Kurita - Scotts Valley CA, US
International Classification:
C23C016/00
US Classification:
427/255280, 118/715000, 118/718000
Abstract:
A method and system for chemical vapor deposition in which preferentially depositing chemical species are formed by extending the residence time of reactant gases in the reaction region. These preferentially depositing species deposit more rapidly on the sides and bottoms of trenches on semiconductor wafers and/or other CVD substrates and thus promote the generation of more uniform films that eliminate expensive post-processing steps such as reverse active masking.

System And Method For Preferential Chemical Vapor Deposition

View page
US Patent:
20040231588, Nov 25, 2004
Filed:
Jun 28, 2004
Appl. No.:
10/876435
Inventors:
Bruce Mayer - Soquel CA, US
Nitin Ingle - Campbell CA, US
Robert Murphy - Santa Cruz CA, US
Colby Mattson - Santa Cruz CA, US
Samuel Kurita - Scotts Valley CA, US
International Classification:
C23C016/00
US Classification:
118/715000
Abstract:
A method and system for chemical vapor deposition in which preferentially depositing chemical species are formed by extending the residence time of reactant gases in the reaction region. These preferentially depositing species deposit more rapidly on the sides and bottoms of trenches on semiconductor wafers and/or other CVD substrates and thus promote the generation of more uniform films that eliminate expensive post-processing steps such as reverse active masking.

Protective Shield And System For Gas Distribution

View page
US Patent:
20030061991, Apr 3, 2003
Filed:
Aug 23, 2002
Appl. No.:
10/226459
Inventors:
Colby Mattson - Santa Cruz CA, US
Iraj Hakimelahy - Scotts Valley CA, US
Larry Bartholomew - Felton CA, US
Seung Park - Felton CA, US
Soon Yuh - Scotts Valley CA, US
Assignee:
ASML US, INC.
International Classification:
C23C016/00
US Classification:
118/715000
Abstract:
A protective shield and system for gas distribution are provided for reducing film and process byproduct deposition on surfaces of a Chemical Vapor Deposition system. In one embodiment, the present invention provides a volume insert within the inert gas shield plenum which reduces byproduct deposition buildup on the shield. In another embodiment, the present invention provides vent guide for directing gaseous deposition byproducts to the center of a vent passageway, thus reducing particle deposits on the walls of the vent system. In another embodiment the present invention provides partial plugs installed in the injector purge passageway for the purpose of redirecting and metering inert gas, thus reducing byproduct deposition on the shield and at the ends of the injectors. In another embodiment, the present invention provides a CVD system having a full volume vent assembly with a large capacity for powder buildup, thereby enhancing the runtime before cleaning maintenance is required.
Colby Daniel Mattson from Santa Cruz, CA, age ~72 Get Report