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Christie L Zipfel

from Summit, NJ
Age ~82

Christie Zipfel Phones & Addresses

  • 164 Canoe Brook Pkwy, Summit, NJ 07901 (908) 522-1459
  • Briny Breezes, FL
  • 164 Canoe Brook Pkwy, Summit, NJ 07901 (908) 327-3584

Work

Position: Administration/Managerial

Education

Degree: Graduate or professional degree

Emails

Resumes

Resumes

Christie Zipfel Photo 1

Vice President

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Location:
53 Parkview Ter, Summit, NJ 07901
Industry:
Research
Work:
Summit Applied Research
Vice President
Languages:
English
Christie Zipfel Photo 2

Vice President

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Location:
Summit, NJ
Industry:
Electrical/Electronic Manufacturing
Work:
Summit Applied Research
Vice President

Business Records

Name / Title
Company / Classification
Phones & Addresses
Christie Zipfel
Vice-President
Summit Applied Research Inc
Research · Commercial Nonphysical Research
164 Canoe Brk Pkwy, Summit, NJ 07901
PO Box 1205, Summit, NJ 07902
(908) 522-1459

Publications

Us Patents

Switching Amplifier For Driving Reactive Loads

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US Patent:
7932777, Apr 26, 2011
Filed:
Feb 20, 2004
Appl. No.:
10/783499
Inventors:
Christie Lewis Zipfel - Summit NJ, US
International Classification:
H03F 3/38
US Classification:
330 10, 330207 A, 330251, 363 41
Abstract:
A switching amplifier drives balanced piezoelectric or other capacitive or reactive loads with a minimum physical electronics volume, enabling a compact arrangement that can combine amplifier and transducer at the same physical location. Power supply current is minimized by using two or more transducers driven with phase-shifted signals, resulting in stored energy being cycled between the transducers rather than being carried over the power supply lines for storage in a power supply. Auxiliary power supply capacitors to store energy coming out of the load can thus be minimized. The modulation scheme puts the switching frequencies in common-mode while the baseband signals are differential mode. The common-mode switching frequency signals are blocked from the loads by a common-mode inductor. The common-mode inductor can be physically small as a result of the large baseband load currents being in differential mode.

Forming Platinum Contacts To In-Based Group Iii-V Compound Devices

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US Patent:
45383421, Sep 3, 1985
Filed:
Jun 15, 1984
Appl. No.:
6/621082
Inventors:
Irfan Camlibel - Stirling NJ
Aland K. Chin - Berkeley Heights NJ
Brymer H. Chin - North Plainfield NJ
Christie L. Zipfel - Summit NJ
Assignee:
AT&T Bell Laboratories - Murray Hill NJ
International Classification:
H01L 21285
US Classification:
29569L
Abstract:
Electrical contacts with low specific-contact resistance to In-based Group III-V compound semiconductors (e. g. , p-InGaAsP) are formed by electron beam depositing a thin Pt layer directly on the semiconductor and sintering at about 450. degree. -525. degree. C. for about 5-30 minutes. Light emitting diodes without dark spot defects can be fabricated using this technique.
Christie L Zipfel from Summit, NJ, age ~82 Get Report