Resumes
Resumes
Carol Boye Phones & Addresses
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560 Watervliet Shaker Rd, Latham, NY 12110 (518) 783-7317
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32 Arbor Rd, South Burlington, VT 05403 (802) 863-1219
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Colonie, NY
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Palm Bay, FL
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2600 Lake Austin Blvd, Austin, TX 78703 (512) 478-2271
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Grand Isle, VT
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Middlebury, VT
Publications
Us Patents
Y-Shaped Carbon Nanotubes As Afm Probe For Analyzing Substrates With Angled Topography
View pageUS Patent:
7368712, May 6, 2008
Filed:
Dec 6, 2005
Appl. No.:
11/164792
Inventors:
Carol A. Boye - Latham NY, US
Toshiharu Furukawa - Essex Junction VT, US
Mark C. Hakey - Fairfax VT, US
Steven J. Holmes - Gilderland NY, US
David V. Horak - Essex Junction VT, US
Toshiharu Furukawa - Essex Junction VT, US
Mark C. Hakey - Fairfax VT, US
Steven J. Holmes - Gilderland NY, US
David V. Horak - Essex Junction VT, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
G01N 23/00
G21K 7/00
G21K 7/00
US Classification:
250306, 250307, 73105, 20415747, 4234472, 438 14
Abstract:
A Y-shaped carbon nanotube atomic force microscope probe tip and methods comprise a shaft portion; a pair of angled arms extending from a same end of the shaft portion, wherein the shaft portion and the pair of angled arms comprise a chemically modified carbon nanotube, and wherein the chemically modified carbon nanotube is modified with any of an amine, carboxyl, fluorine, and metallic component. Preferably, each of the pair of angled arms comprises a length of at least 200 nm and a diameter between 10 and 200 nm. Moreover, the chemically modified carbon nanotube is preferably adapted to allow differentiation between substrate materials to be probed. Additionally, the chemically modified carbon nanotube is preferably adapted to allow fluorine gas to flow through the chemically modified carbon nanotube onto a substrate to be characterized. Furthermore, the chemically modified carbon nanotube is preferably adapted to chemically react with a substrate surface to be characterized.
Advanced Wafer Security Method Including Pattern And Wafer Verifications
View pageUS Patent:
20200365518, Nov 19, 2020
Filed:
May 15, 2019
Appl. No.:
16/412648
Inventors:
- Armonk NY, US
Carol Boye - Latham NY, US
Fee Li Lie - Albany NY, US
Shravan Kumar Matham - Guilderland NY, US
Brad Austin - Wappingers Falls NY, US
Carol Boye - Latham NY, US
Fee Li Lie - Albany NY, US
Shravan Kumar Matham - Guilderland NY, US
Brad Austin - Wappingers Falls NY, US
International Classification:
H01L 23/544
H01L 21/66
H01L 21/66
Abstract:
An advanced security method for verifying that integrated circuit patterns being processed into one or more layers provided to a wafer are trusted patterns and that the wafer being used during processing is a trusted wafer is provided. The method includes separate steps of pattern verification and wafer verification. Notably, the method includes first verifying that a pattern printed on a wafer matches a pattern of a trusted reference. Next, a peak and valley profile present at a specific location on a backside surface of the wafer is measured. The method further includes second verify that the measured peak and valley profile matches an original peak and valley profile measured at the same location on the backside surface of the wafer.