Search

Bryant R Linares

from Wilmington, VT
Age ~62
Get Report
Also known as:
Bryant Lisa Linares, Bryant L Linares
Related to:
Elizabeth C Miller, 83
Connected to:
Adolfo LinaresAida L Linares, 77Alexandra D Linares, 37Alice S Linares, 76Anabel Linares, 62Anita U Linares, 80Annie I Linares, 58Arturo Linares, 61Bladimir Linares, 47Ceci E Linares, 45

Bryant Linares Phones & Addresses

  • Wilmington, VT
  • 400 W North St APT 1006, Raleigh, NC 27603 (603) 236-4703
  • 114 Proctor St, Hopkinton, MA 01748 (508) 435-3678
  • 2 Lamplighter Ln, Hopkinton, MA 01748 (508) 435-3678
  • 13 Olcott St, Watertown, MA 02472 (508) 926-0315
  • Campton, NH
  • 2 Lamplighter Ln, Hopkinton, MA 01748

Work

Position: Professional/Technical

Education

Degree: Graduate or professional degree

Business Records

Name / Title
Company / Classification
Phones & Addresses
Bryant R. Linares
President
APOLLO DIAMOND, INC
93 W St, Medfield, MA 02052
2 Lamplighter Ln, Hopkinton, MA 01748
Bryant R. Linares
President
IMAGEMAKER, INC
1 Proctor St, Hopkinton, MA 01748
Bryant R. Linares
Treasurer
SUPPORT OUR TROOPS USA, INC
Business Services
841 Worcester Rd SUITE 184, Natick, MA 01760
58 Westlake Rd, Natick, MA 01760

Publications

Wikipedia

Apollo Diamd

View page

Boston, Massachusetts, United States: Key people: Robert Linares, Bryant Linares: Products: Synthetic diamonds: Website: http://www.apollodiamond.com/

Us Patents

Diamond Medical Devices

View page
US Patent:
7829377, Nov 9, 2010
Filed:
Jan 11, 2006
Appl. No.:
11/329959
Inventors:
Robert C. Linares - Sherborn MA, US
Patrick J. Doering - Holliston MA, US
Bryant Linares - Sherborn MA, US
Alfred R. Genis - East Douglas MA, US
William W. Dromeshauser - Norwell MA, US
Michael Murray - Mountain View CA, US
Alicia E. Novak - Denver CO, US
John M. Abrahams - Scarsdale NY, US
Assignee:
Apollo Diamond, Inc - Framingham MA
International Classification:
H01L 21/00
US Classification:
438105, 438514, 438555, 438549
Abstract:
Masked and controlled ion implants, coupled with annealing or etching are used in CVD formed single crystal diamond to create structures for both optical applications, nanoelectromechanical device formation, and medical device formation. Ion implantation is employed to deliver one or more atomic species into and beneath the diamond growth surface in order to form an implanted layer with a peak concentration of atoms at a predetermined depth beneath the diamond growth surface. The composition is heated in a non-oxidizing environment under suitable conditions to cause separation of the diamond proximate the implanted layer. Further ion implants may be used in released structures to straighten or curve them as desired. Boron doping may also be utilized to create conductive diamond structures.

Method Of Forming A Waveguide In Diamond

View page
US Patent:
8058085, Nov 15, 2011
Filed:
Jul 11, 2006
Appl. No.:
11/996482
Inventors:
Robert C. Linares - Sherborn MA, US
Patrick J. Doering - Holliston MA, US
William W. Dromeshauser - Norwell MA, US
Bryant Linares - Sherborn MA, US
Alfred R. Genis - East Douglas MA, US
Assignee:
Apollo Diamond, Inc - Framingham MA
International Classification:
H01L 21/00
US Classification:
438 31, 438105, 438795, 257E21041, 257E21085, 257E21324
Abstract:
N-V centers in diamond are created in a controlled manner. In one embodiment, a single crystal diamond is formed using a CVD process, and then annealed to remove N-V centers. A thin layer of single crystal diamond is then formed with a controlled number of N-V centers. The N-V centers form Qubits for use in electronic circuits. Masked and controlled ion implants, coupled with annealing are used in CVD formed diamond to create structures for both optical applications and nanoelectromechanical device formation. Waveguides may be formed optically coupled to the N-V centers and further coupled to sources and detectors of light to interact with the N-V centers.

Method Of Forming A Waveguide In Diamond

View page
US Patent:
8455278, Jun 4, 2013
Filed:
Nov 14, 2011
Appl. No.:
13/295752
Inventors:
Robert C. Linares - Sherborn MA, US
Patrick J. Doering - Holliston MA, US
William W. Dromeshauser - Norwell MA, US
Bryant Linares - Sherborn MA, US
Alfred R. Genis - East Douglas MA, US
Assignee:
Apollo Diamond, Inc - Framingham MA
International Classification:
H01L 21/00
C30B 33/08
C30B 33/12
US Classification:
438 31, 216 2, 216 40, 216 41, 216 87, 438105, 257E21344
Abstract:
N-V centers in diamond are created in a controlled manner. In one embodiment, a single crystal diamond is formed using a CVD process, and then annealed to remove N-V centers. A thin layer of single crystal diamond is then formed with a controlled number of N-V centers. The N-V centers form Qubits for use in electronic circuits. Masked and controlled ion implants, coupled with annealing are used in CVD formed diamond to create structures for both optical applications and nanoelectromechanical device formation. Waveguides may be formed optically coupled to the N-V centers and further coupled to sources and detectors of light to interact with the N-V centers.

Structures Formed In Diamond

View page
US Patent:
20060157713, Jul 20, 2006
Filed:
Jul 11, 2005
Appl. No.:
11/178623
Inventors:
Robert Linares - Sherborn MA, US
Patrick Doering - Holliston MA, US
William Dromeshauser - Norwell MA, US
Bryant Linares - Sherborn MA, US
Alfred Genis - East Douglas MA, US
International Classification:
H01L 31/0312
H01L 21/00
US Classification:
257077000, 438105000, 257E29104
Abstract:
N-V centers in diamond are created in a controlled manner. In one embodiment, a single crystal diamond is formed using a CVD process, and then annealed to remove N-V centers. A thin layer of single crystal diamond is then formed with a controlled number of N-V centers. The N-V centers form Qubits for use in electronic circuits. Masked and controlled ion implants, coupled with annealing are used in CVD formed diamond to create structures for both optical applications and nanoelectromechanical device formation. Waveguides may be formed optically coupled to the N-V centers and further coupled to sources and detectors of light to interact with the N-V centers.

Diamond Identifier

View page
US Patent:
20100055022, Mar 4, 2010
Filed:
May 8, 2009
Appl. No.:
12/463121
Inventors:
Bryant Linares - Sherborn MA, US
Robert C. Linares - Sherborn MA, US
Patrick J. Doering - Holliston MA, US
Assignee:
Apollo Diamond Gemstone Corporation - Framingham MA
International Classification:
C01B 31/06
G01N 21/87
G01N 21/95
C23C 16/27
US Classification:
423446, 356 30, 427 8
Abstract:
Diamonds are embedded with one or more layers representative of an identifier. The identifier may include encoding in the form of defects created in one or more layers in a recognizable pattern, such as a bar code, characters or symbols. In some embodiments, a single crystal CVD diamond is formed with layers of varying thickness to provide the encoding. A system includes a radiation source to provide short wavelength light. A holder positions a gemstone to receive the light. A detector is positioned to receive fluorescent light from the gemstone when the gemstone is a CVD grown gemstone, and a pattern identifier correlates a detected pattern of defects to unique identification information.

Diamond Medical Devices

View page
US Patent:
20110054450, Mar 3, 2011
Filed:
Nov 3, 2010
Appl. No.:
12/938766
Inventors:
Robert C. Linares - Sherborn MA, US
Patrick J. Doering - Holliston MA, US
Bryant Linares - Sherborn MA, US
Alfred R. Genis - East Douglas MA, US
William W. Dromeshauser - Norwell MA, US
Michael Murray - Mountain View CA, US
Alicia E. Novak - Denver CO, US
John M. Abrahams - Scarsdale NY, US
Assignee:
Apollo Diamond, Inc - Framingham MA
International Classification:
A61B 17/00
A61F 2/06
A61F 2/64
US Classification:
606 1, 623 124, 623 27
Abstract:
Masked and controlled ion implants, coupled with annealing or etching are used in CVD formed single crystal diamond to create structures for both optical applications, nanoelectromechanical device formation, and medical device formation. Ion implantation is employed to deliver one or more atomic species into and beneath the diamond growth surface in order to form an implanted layer with a peak concentration of atoms at a predetermined depth beneath the diamond growth surface. The composition is heated in a non-oxidizing environment under suitable conditions to cause separation of the diamond proximate the implanted layer. Further ion implants may be used in released structures to straighten or curve them as desired. Boron doping may also be utilized to create conductive diamond structures.
Control profile
Bryant R Linares from Wilmington, VT, age ~62 Get Report