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Bruno Geoffrion Phones & Addresses

  • Berkeley, CA
  • 1645 Carlson Ln, Redondo Beach, CA 90278 (310) 379-6075
  • 1545 S Carlson Ln, Redondo Beach, CA 90278
  • 119 S Lucia Ave #4, Redondo Beach, CA 90277
  • 668 W Washington Ave, Sunnyvale, CA 94086
  • South San Francisco, CA
  • 925 Vermont St, San Jose, CA 95126 (408) 984-3817
  • Los Angeles, CA
  • Tallahassee, FL

Publications

Us Patents

Hdp-Cvd Uniformity Control

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US Patent:
6890597, May 10, 2005
Filed:
May 9, 2003
Appl. No.:
10/435296
Inventors:
Padmanabhan Krishnaraj - San Francisco CA, US
Bruno Geoffrion - San Jose CA, US
Michael S. Cox - Davenport CA, US
Lin Zhang - San Jose CA, US
Bikram Kapoor - Santa Clara CA, US
Anchuan Wang - Fremont CA, US
Zhenjiang Cui - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C016/40
US Classification:
4272481, 42725537, 427355, 438692, 438697, 438788
Abstract:
A combination of deposition and polishing steps are used to permit improved uniformity of a film after the combination of steps. Both the deposition and polishing are performed with processes that vary across the substrate. The combination of the varying deposition and etching rates results in a film that is substantially planar after the film has been polished. In some instances, it may be easier to control the variation of one of the two processes than the other so that the more controllable process is tailored to accommodate nonuniformities introduced by the less controllable process.

Method For High Aspect Ratio Hdp Cvd Gapfill

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US Patent:
7064077, Jun 20, 2006
Filed:
Oct 1, 2004
Appl. No.:
10/956469
Inventors:
Zhong Qiang Hua - Saratoga CA, US
Dong Qing Li - Santa Clara CA, US
Zhengquan Tan - Cupertino CA, US
Zhuang Li - San Jose CA, US
Michael Chiu Kwan - Redwood City CA, US
Bruno Geoffrion - San Jose CA, US
Padmanabhan Krishnaraj - San Francisco CA, US
Assignee:
Applied Materials - Santa Clara CA
International Classification:
H01L 21/302
US Classification:
438715, 438706, 438714, 427569
Abstract:
A method of depositing a high density plasma silicon oxide layer having improved gapfill capabilities. In one embodiment the method includes flowing a process gas consisting of a silicon-containing source, an oxygen-containing source and helium into a substrate processing chamber and forming a plasma from the process gas. The ratio of the flow rate of the helium with respect to the combined flow rate of the silicon source and oxygen source is between 0. 5:1 and 3. 0:1 inclusive. In one particular embodiment, the process gas consists of monosilane (SiH), molecular oxygen (O) and helium.

Use Of Germanium Dioxide And/Or Alloys Of Geo2 With Silicon Dioxide For Semiconductor Dielectric Applications

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US Patent:
7189639, Mar 13, 2007
Filed:
Feb 10, 2005
Appl. No.:
11/055141
Inventors:
Padmanabhan Krishnaraj - San Francisco CA, US
Michael S. Cox - Davenport CA, US
Bruno Geoffrion - South San Francisco CA, US
Srinivas D. Nemani - Sunnyvale CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/4763
H01L 21/44
US Classification:
438627, 438758, 438767, 257E21212
Abstract:
A method is disclosed for depositing a dielectric film on a substrate having a plurality of gaps formed between adjacent raised surfaces disposed in a high density plasma substrate processing chamber substrate. In one embodiment the method comprises flowing a process gas comprising a germanium source, a silicon source and an oxidizing agent into the substrate processing chamber; forming a high density plasma that has simultaneous deposition and sputtering components from the process gas to deposit a dielectric film comprising silicon, germanium and oxygen; and during the step of forming a high density plasma, maintaining a pressure within the substrate processing chamber of less than 100 mTorr while allowing the dielectric film to be heated above its glass transition temperature.

Plasma Etch Process Using Polymerizing Etch Gases With Different Etch And Polymer-Deposition Rates In Different Radial Gas Injection Zones With Time Modulation

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US Patent:
7431859, Oct 7, 2008
Filed:
Apr 28, 2006
Appl. No.:
11/414017
Inventors:
Kallol Bera - San Jose CA, US
Xiaoye Zhao - Mountain View CA, US
Kenny L. Doan - San Jose CA, US
Ezra Robert Gold - Sunnyvale CA, US
Paul Lukas Brillhart - Pleasanton CA, US
Bruno Geoffrion - Sunnyvale CA, US
Bryan Pu - San Jose CA, US
Daniel J. Hoffman - Saratoga CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/00
C23F 1/00
US Classification:
216 67, 216 58, 216 59, 438706, 438710, 15634534
Abstract:
A plasma etch process includes injecting process gases with different compositions of chemical species through different radial gas injection zones of an overhead electrode to establish a desired distribution of chemical species among the plural gas injection zones.

Plasma Etch Process Using Polymerizing Etch Gases Across A Wafer Surface And Additional Polymer Managing Or Controlling Gases In Independently Fed Gas Zones With Time And Spatial Modulation Of Gas Content

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US Patent:
7540971, Jun 2, 2009
Filed:
Apr 28, 2006
Appl. No.:
11/414015
Inventors:
Kallol Bera - San Jose CA, US
Xiaoye Zhao - Mountain View CA, US
Kenny L. Doan - San Jose CA, US
Ezra Robert Gold - Sunnyvale CA, US
Paul Lukas Brillhart - Pleasanton CA, US
Bruno Geoffrion - Sunnyvale CA, US
Bryan Pu - San Jose CA, US
Daniel J. Hoffman - Saratoga CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/00
C23F 1/00
US Classification:
216 67, 216 58, 216 59, 438706, 438710, 15634534
Abstract:
A plasma etch process etches high aspect ratio openings in a dielectric film on a workpiece in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting the workpiece. The process includes injecting a polymerizing etch process gas through an annular zone of gas injection orifices in the ceiling electrode, and evacuating gas from the reactor through a pumping annulus surrounding an edge of the workpiece. The high aspect ratio openings are etched in the dielectric film with etch species derived from the etch process gas while depositing a polymer derived from the etch process gas onto the workpiece, by generating a plasma in the reactor by applying VHF source power and/or HF and/or LF bias power to the electrodes at the ceiling and/or the electrostatic chuck. The process further includes slowing the deposition rate of the polymer, minimizing etch stop and/or increasing the etch rate in a region of the workpiece typically the center by injecting oxygen or nitrogen and/or high-fluorine containing gas through gas injection orifice in the corresponding region of the ceiling electrode, and adjusting the flow rate of the oxygen or nitrogen and/or high-fluorine containing gas through the gas injection orifice to minimize the difference between profiles and etch depths at the workpiece center and the workpiece periphery.

Plasma Etch Process With Separately Fed Carbon-Lean And Carbon-Rich Polymerizing Etch Gases In Independent Inner And Outer Gas Injection Zones

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US Patent:
7541292, Jun 2, 2009
Filed:
Apr 28, 2006
Appl. No.:
11/414027
Inventors:
Kallol Bera - San Jose CA, US
Xiaoye Zhao - Mountain View CA, US
Kenny L. Doan - San Jose CA, US
Ezra Robert Gold - Sunnyvale CA, US
Paul Lukas Brillhart - Pleasanton CA, US
Bruno Geoffrion - Sunnyvale CA, US
Bryan Pu - San Jose CA, US
Daniel J. Hoffman - Saratoga CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/461
US Classification:
438723, 438719, 438724, 438725, 438729, 438736, 216 37, 216 67, 216 89
Abstract:
A plasma etch process for etching high aspect ratio openings in a dielectric film on a workpiece is carried out in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting the workpiece. The process includes injecting a first polymerizing etch process gas through a radially inward one of plural concentric gas injection zones in the ceiling electrode and injecting a second polymerizing etch process gas through a radially outward one of the plural concentric gas injection zones in the ceiling electrode, the compositions of the first and second process gases having first and second carbon-to-fluorine ratios that differ from one another. The process further includes evacuating gas from the reactor through a pumping annulus surrounding an edge of the workpiece, and etching the high aspect ratio openings in the dielectric film with etch species derived from the etch process gas while depositing a polymer derived from the etch process gas onto the workpiece, by generating a plasma in the reactor.

Gas Distribution System For Improved Transient Phase Deposition

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US Patent:
7722737, May 25, 2010
Filed:
May 4, 2005
Appl. No.:
11/123453
Inventors:
Sudhir Gondhalekar - Fremont CA, US
Robert Duncan - San Jose CA, US
Siamak Salimian - Sunnyvale CA, US
Muhammad M. Rasheed - Fremont CA, US
Harry Smith Whitesell - San Jose CA, US
Bruno Geoffrion - San Jose CA, US
Padmanabhan Krishnaraj - San Francisco CA, US
Rudolf Gujer - Saratoga CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/326
C23C 16/505
US Classification:
15634533, 15634534, 118715
Abstract:
Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel. The plurality of orifices are spaced from the gas inlet by a plurality of distances, and have sizes which vary with the distances from the gas inlet as measured along the first channel, such that the size of the orifice increases with an increase in the distance between the orifice and the gas inlet as measured along the first channel.

Method And Apparatus For Controlling Gas Flow To A Processing Chamber

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US Patent:
7775236, Aug 17, 2010
Filed:
Feb 26, 2007
Appl. No.:
11/678622
Inventors:
Ezra Robert Gold - Sunnyvale CA, US
Richard Charles Fovell - San Jose CA, US
James Patrick Cruse - Capitola CA, US
Jared Ahmad Lee - Santa Clara CA, US
Bruno Geoffrion - Sunnyvale CA, US
Douglas Arthur Buchberger - Livermore CA, US
Martin J. Salinas - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
F16K 11/24
US Classification:
1374875, 137597
Abstract:
A method and apparatus for delivering gases to a semiconductor processing system are provided. In one embodiment, an apparatus for delivering gases to a semiconductor processing system includes a plurality of gas input and output lines having inlet and outlet ports. Connecting lines couple respective pairs of the gas input and gas output lines. Connecting valves are arranged to control flow through the respective connecting lines. Mass gas flow controllers are arranged to control flow into respective inlet ports. In another embodiment, a method includes providing a manifold having at least a plurality of inlet that may be selectively coupled to at least one of a plurality of outlets, flowing one or more gases through the manifold to a vacuum environment by-passing the processing chamber prior to processing or to a calibration circuit, and flowing the one or more gases into the processing chamber during substrate processing.
Bruno Stephanie G Geoffrion from Berkeley, CA, age ~52 Get Report