Bruce A Ek

51358875, Aug 4, 1992

Jun 10, 1991

7/712859

Sylvain L. Delage - Paris, FR
Bruce A. Ek - Pelham Manor NY
Subramanian S. Iyer - Yorktown Heights NY

International Business Machines Corporation - Armonk NY

H01L 21203
C22C 2900
C22C 2800

437106

A simple effective and fairly stable boron source that is easy to prepare and simple to operate under UHV processing conditions is disclosed. The method for fabricating this boron source includes the in situ alloying of boron into a high melting point elemental semiconductor material, preferably silicon, in the hearth of an electron beam evaporator. A supersaturated solution of boron in silicon is created by melting the silicon and dissolving the boron into it and quenching the solution. The boron needs to be of high purity and may be in the form of crystalline granules for this to take place under controlled conditions and moderate power levels. When silicon is evaporated from this resultant silicon-boron alloy source, the silicon evaporates uncontaminated from a molten pool of the alloy in the center of the hearth. A segregation of boron into the liquid phase occurs and a segregation takes place from this molten phase into the vapor phase that is being evaporated from the pool. The boron incorporates without complex kinetics into the growing layers such as Si, Ge, Si-Ge alloys and metals as a dopant.

55634281, Oct 8, 1996

Jan 30, 1995

8/380782

Bruce A. Ek - Pelham Manor NY
Stephen M. Gates - Ossining NY
Fernando J. Guarin - Millbrook NY
Subramanian S. Iyer - Yorktown Heights NY
Adrian R. Powell - Brookfield CT

H01L 310312
H01L 27108
H01L 3300
H01L 310328

257 77

A structure is fabricated comprising a substrate, a dielectric layer formed over the substrate, and a single crystal layer of a compound formed over the dielectric layer. The single crystal layer is formed by the chemical reaction of at least a first element with an initial single crystal layer of a second element on the dielectric layer having an initial thickness of about 100 to about 10,000 angstroms. According to another aspect, a carbide single crystal layer is provided on a substrate by depositing carbon from a solid carbon source at a low rate and low temperature, followed by reacting the carbon with the underlying layer to convert it to the carbide.

54612438, Oct 24, 1995

Oct 29, 1993

8/145986

Bruce A. Ek - Pelham Manor NY
Subramanian S. Iyer - Yorktown Heights NY
Philip M. Pitner - Wappingers Falls NY
Adrian R. Powell - New Milford CT
Manu J. Tejwani - Yorktown Heights NY

International Business Machines Corporation - Armonk NY

H01L 31072
H01L 2906
H01L 2701

257190

A structure with strained and defect free semiconductor layers. In a preferred embodiment, silicon on insulator may be used as a substrate for the growth of fully relaxed SiGe buffer layers. A new strain relief mechanism operates, whereby the SiGe layer relaxes without the generation of threading dislocations within the SiGe layer. This is achieved by depositing SiGe on an SOI substrate with a superficial silicon thickness. Initially the strain in the SiGe layer becomes equalized with the thin Si layer by creating tensile strain in the Si layer. Then the strain created in the thin Si layer is relaxed by plastic deformation during an anneal. Since dislocations are formed, and glide in the thin Si layer, threading dislocations are not introduced into the upper SiGe material. A strained silicon layer for heterostructures may then be formed on the SiGe material.

57598983, Jun 2, 1998

Dec 19, 1996

8/770065

Bruce A. Ek - Pelham Manor NY
Subramanian Srikanteswara Iyer - Yorktown Heights NY
Philip Michael Pitner - Wappingers Falls NY
Adrian R. Powell - New Milford CT
Manu Jamndas Tejwani - Yorktown Heights NY

International Business Machines Corporation - Armonk NY

H01L 21201

438291

A process and method for producing strained and defect free semiconductor layers. In a preferred embodiment, silicon on insulator may be used as a substrate for the growth of fully relaxed SiGe buffer layers. A new strain relief mechanism operates, whereby the SiGe layer relaxes without the generation of threading dislocations within the SiGe layer. This is achieved by depositing SiGe on an SOI substrate with a superficial silicon thickness. Initially the strain in the SiGe layer becomes equalized with the thin Si layer by creating tensile strain in the Si layer. Then the strain created in the thin Si layer is relaxed by plastic deformation during an anneal. Since dislocations are formed, and glide in the thin Si layer, threading dislocations are not introduced into the upper SiGe material. A strained silicon layer for heterostructures may then be formed on the SiGe material.

56675860, Sep 16, 1997

Apr 1, 1996

8/626115

Bruce Allen Ek - Pelham Manor NY
Stephen McConnell Gates - Ossining NY
Fernando Jose Guarin - Millbrook NY
Subramanian Srikanteswara Iyer - Yorktown Heights NY
Adrian Roger Powell - Brookfield CT

International Business Machines Corporation - Armonk NY

C30B 2502

117 84

A structure is fabricated comprising a substrate, a dielectric layer formed over the substrate, and a single crystal layer of a compound formed over the dielectric layer. The single crystal layer is formed by the chemical reaction of at least a first element with an initial single crystal layer of a second element on the dielectric layer having an initial thickness of about 100 to about 10,000 angstroms. According to another aspect, a carbide single crystal layer is provided on a substrate by depositing carbon from a solid carbon source at a low rate and low temperature, followed by reacting the carbon with the underlying layer to convert it to the carbide.

20180294368, Oct 11, 2018

Jun 14, 2018

16/009098

- Armonk NY, US
Bruce A. Ek - Pelham Manor NY, US
Richard A. Haight - Mahopac NY, US
Ravin Mankad - Mumbai, IN
Saurabh Singh - Yonkers NY, US
Teodor K. Todorov - Yorktown Heights NY, US

H01L 31/032
H01L 31/0224
H01L 31/18
H01L 31/0216
H01L 31/072

Kesterite photovoltaic devices having a back surface field layer are provided. In one aspect, a method of forming a photovoltaic device includes: forming a complete photovoltaic device having a substrate, an electrically conductive layer on the substrate, an absorber layer on the electrically conductive layer, a buffer layer on the absorber layer, and a transparent front contact on the buffer layer; removing the substrate and the electrically conductive layer from the complete photovoltaic device to expose a backside surface of the absorber layer; forming a passivating layer on the backside surface of the absorber layer; and forming a high work function back contact on the passivating layer. A photovoltaic device having a passivating layer is also provided.

20180097130, Apr 5, 2018

Sep 30, 2016

15/281789

- Armonk NY, US
Bruce A. Ek - Pelham Manor NY, US
Richard A. Haight - Mahopac NY, US
Ravin Mankad - Mumbai, IN
Saurabh Singh - Yonkers NY, US
Teodor K. Todorov - Yorktown Heights NY, US

H01L 31/032
H01L 31/072
H01L 31/0216
H01L 31/18
H01L 31/0224

Kesterite photovoltaic devices having a back surface field layer are provided. In one aspect, a method of forming a photovoltaic device includes: forming a complete photovoltaic device having a substrate, an electrically conductive layer on the substrate, an absorber layer on the electrically conductive layer, a buffer layer on the absorber layer, and a transparent front contact on the buffer layer; removing the substrate and the electrically conductive layer from the complete photovoltaic device to expose a backside surface of the absorber layer; forming a passivating layer on the backside surface of the absorber layer; and forming a high work function back contact on the passivating layer. A photovoltaic device having a passivating layer is also provided.