Search

Brent E Schwab

from Loretto, MN
Age ~58
Get Report
Also known as:
Brent Brent Schwab, Brent B Schwab, Brent E Scab, Brent E Scwab
Phone and address:
8360 Greenfield Rd, Loretto, MN 55357
Related to:
Natice Schwab, 36Anthony W Eckstein, 85Patricia A Eckstein, 56J EcksteinErma M Schwab, 85Michael D Eckstein, 47Jonas E Schwab, 86Chad C Schwab, 54Patricia A Schwab, 56J Eckstein, 82Bud SchwabB SchwabDavid S Eckstein, 63Matthew EcksteinJoann M Eckstein, 82Christina J Streeter, 58Traci F Schwab, 64Jennifer L Smeby, 47
Connected to:
Adolf J Schwab, 111Alexis M Schwab, 27Alma P Schwab, 104Aniela C Schwab, 50Anissa L Schwab, 53Arnaud P Schwab, 50Arthur Schwab, 72Asher Schwab, 49Branden Schwab, 42Brianna L Schwab, 38

Brent Schwab Phones & Addresses

  • 8360 Greenfield Rd, Loretto, MN 55357
  • Chanhassen, MN
  • Medina, MN
  • 43311 N 18Th St, New River, AZ 85087 (623) 465-0556
  • Phoenix, AZ
  • 3309 Red Fox Dr, Hamel, MN 55340 (507) 526-3704
  • Mesa, AZ
  • 43311 N 18Th St, New River, AZ 85087 (602) 318-8870

Work

Position: Protective Service Occupations

Emails

b***[email protected]

Publications

Us Patents

Method Of Surface Preparation

View page
US Patent:
6465374, Oct 15, 2002
Filed:
Jan 13, 2000
Appl. No.:
09/482222
Inventors:
Jeffery W. Butterbaugh - Eden Prairie MN
Brent Schwab - Burnsville MN
Assignee:
FSI International, Inc. - Chaska MN
International Classification:
H01L 2100
US Classification:
438795, 438796, 438906
Abstract:
A semiconductor substrate is heated via exposure to ultraviolet radiation substantially in the absence of a halogen containing chemical and subsequently exposed to a halogen-containing gas in the absence of ultraviolet radiation to remove contaminants therefrom.

Equipment For Uv Wafer Heating And Photochemistry

View page
US Patent:
6663792, Dec 16, 2003
Filed:
Nov 30, 2000
Appl. No.:
09/727052
Inventors:
Robert T. Fayfield - St. Louis Park MN
Brent Schwab - Burnsville MN
Assignee:
FSI International, Inc. - Chaska MN
International Classification:
C03C 1500
US Classification:
216 66, 216 55, 216 62, 20415715, 432 18, 432202
Abstract:
The apparatus of the present invention provides for the dual use of a UV source to heat a substrate and to facilitate photochemistry necessary for the treatment of the substrate. The present invention also provides a method for processing a substrate by heating the substrate to a temperature above ambient via UV radiation at a first power level and conditioning the substrate by exposing the substrate to a photochemically (UV) reactive chemical, or a reactive chemical that can react with a compound on the surface of the substrate to form a photochemically reactive compound, in the presence of UV radiation at a second power level.

Method For Etching High-K Films In Solutions Comprising Dilute Fluoride Species

View page
US Patent:
6835667, Dec 28, 2004
Filed:
Jun 14, 2002
Appl. No.:
10/172795
Inventors:
Kurt K. Christenson - Minnetonka MN
Thomas J. Wagener - Shorewood MN
Neil Bruce Rosengren - Plymouth MN
Brent D. Schwab - Burnsville MN
Assignee:
FSI International, Inc. - Chaska MN
International Classification:
H01L 21461
US Classification:
438745, 438689
Abstract:
A process for etching high dielectric constant (high-k) films (e. g. , Zr Si O , Hf Si O , Zr Hf O , Hf Al O , and Zr Al O ) more rapidly than coexisting SiO , polysilicon, silicon and/or other films is disclosed. The process comprises contacting the films with an aqueous solution comprising a fluoride containing species at a concentration sufficiently dilute to achieve a desired selective etch of the high-k film. The etching solution is preferably used above ambient temperature to further increase the etch selectivity of the high-k films relative to coexisting SiO and/or other films. The etch rate of the solution can also be adjusted by controlling the pH of the etching solution, e. g. , by the addition of other acids or bases to the solution (for example, HCl or NH OH).

Use Of Silyating Agents

View page
US Patent:
7425505, Sep 16, 2008
Filed:
Jul 19, 2004
Appl. No.:
10/894319
Inventors:
Philip G. Clark - Eden Prairie MN, US
Kurt Karl Christenson - Minnetonka MN, US
Brent D. Schwab - Burnsville MN, US
Assignee:
FSI International, Inc. - Chaska MN
International Classification:
H01L 21/44
US Classification:
438689, 438725, 438780, 438787, 257E2156
Abstract:
The present invention provides improvements to the use of silyating agents in semiconductor processing. More particularly, the silyating agents may be provided in combination with a substantially non-flammable ether, so that the combination is substantially non-flammable. Additionally, the silyating agent may be utilized in vapor form, or applied in conjunction with the electromagnetic radiation. Each of these embodiments can enhance the usability of the silyating agent, i. e. , by rendering the silyating agent more safe, more easily utilized in a variety of processing equipment and/or by enhancing the passivation efficacy/efficiency of the silyating agent.

Gaseous Process For Surface Preparation

View page
US Patent:
20020025684, Feb 28, 2002
Filed:
Apr 6, 2001
Appl. No.:
09/828056
Inventors:
Jeffrey Butterbaugh - Eden Prairie MN, US
Brent Schwab - Burnsville MN, US
Roger Gifford - Burnsville MN, US
International Classification:
H01L021/302
H01L021/461
US Classification:
438/712000
Abstract:
Silicon oxide on a substrate may be etched by providing the substrate in a process chamber, evacuating the chamber to a pressure of less than about 1 torr; providing a gaseous mixture comprising an inert gas, alcohol and water to the process chamber and substrate and, subsequently further providing a gaseous anhydrous halogen containing species to the gaseous mixture provided to the process chamber and substrate.

Cleaning Process For Semiconductor Substrates

View page
US Patent:
20060272677, Dec 7, 2006
Filed:
Jun 20, 2005
Appl. No.:
11/156763
Inventors:
Nam Lee - Eden Prairie MN, US
Philip Clark - Eden Prairie MN, US
Brent Schwab - Burnsville MN, US
International Classification:
C23G 1/00
C23G 1/02
B08B 3/00
US Classification:
134003000, 134002000, 134034000, 134026000, 134028000, 134029000
Abstract:
The present invention relates to cleaning processes for semiconductor substrates. More particularly, the present inventive method can provide enhanced particle removal efficiencies at a given material loss. In fact, in certain embodiments, the present method can achieve particle removal efficiencies of at least about 90%, while yet removing less than about 2 angstroms of any oxide present on the semiconductor substrate. As such, the present methods find particular applicability in the processing of advanced technology nodes.

Equipment For Uv Wafer Heating And Photochemistry

View page
US Patent:
61652733, Dec 26, 2000
Filed:
Oct 21, 1997
Appl. No.:
8/955355
Inventors:
Robert T. Fayfield - St. Louis Park MN
Brent Schwab - Burnsville MN
Assignee:
FSI International Inc. - Chaska MN
International Classification:
C23C 1600
US Classification:
118722
Abstract:
The apparatus of the present invention provides for the dual use of a UV source to heat a substrate and to facilitate photochemistry necessary for the treatment of the substrate. The present invention also provides a method for processing a substrate by heating the substrate to a temperature above ambient via UV radiation at a first power level and conditioning the substrate by exposing the substrate to a photochemically (UV) reactive chemical, or a reactive chemical that can react with a compound on the surface of the substrate to form a photochemically reactive compound, in the presence of UV radiation at a second power level.

Apparatus For Processing Both Sides Of A Microelectronic Device Precursor

View page
US Patent:
62874136, Sep 11, 2001
Filed:
Dec 17, 1999
Appl. No.:
9/464780
Inventors:
Robert T. Fayfield - St. Louis Park MN
Brent Schwab - Burnsville MN
Assignee:
FSI International, Inc. - Chaska MN
International Classification:
C23F 102
C23C 1600
US Classification:
156345
Abstract:
The apparatus of the present invention provides for the dual use of a UV source to heat a substrate and to facilitate photochemistry necessary for the treatment of the substrate. The present invention also provides a method for processing a substrate by heating the substrate to a temperature above ambient via UV radiation at a first power level and conditioning the substrate by exposing the substrate to a photochemically (UV) reactive chemical, or a reactive chemical that can react with a compound on the surface of the substrate to form a photochemically reactive compound, in the presence of UV radiation at a second power level.

Isbn (Books And Publications)

Erfindung Und Verbesserungsvorschlag Im Arbeitsverhaltnis: Eine Systematische Darstellung Fur Die Praxis

View page
Author

Brent Schwab

ISBN #

3771962935

Control profile
Brent E Schwab from Loretto, MN, age ~58 Get Report