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Asif Arfi

from Austin, TX
Age ~57
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Also known as:
Asfi Arfi, Asif Arli, Arfi Asif
Phone and address:
2809 Cavern Mist Ln, Austin, TX 78739
(512) 535-2290
Related to:
Mary J ThorntonNelson L Thornton, 99
Connected to:
Amina Arfi, 57Erik S Arfken, 46Shari L Arfons, 66Fred Arford, 65Vickie E Arford, 69Christina E Arfsten, 35Nanning J Arfsten, 78Wade S Arfsten, 52Kari M Arfstrom, 58Jack D Arft, 61

Asif Arfi Phones & Addresses

  • 2809 Cavern Mist Ln, Austin, TX 78739 (512) 535-2290
  • Mansfield, MA
  • Essex Junction, VT
  • 10059 Geronimo St, Boise, ID 83709
  • Williston, VT
  • Wichita, KS

Work

Company: Verisilicon Mar 2020 Position: Director of operations

Education

School / High School: Wichita State University

Skills

Semiconductors • Ic • Semiconductor Industry • Asic • Soc • Cross Functional Team Leadership • Cmos • Electronics • Debugging • Failure Analysis

Industries

Semiconductors

Resumes

Resumes

Asif Arfi Photo 1

Director Of Operations

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Location:
Austin, TX
Industry:
Semiconductors
Work:
Verisilicon
Director of Operations
Nxp Semiconductors
Business Operations Manager
Spansion 2006 - 2010
Senior Engineer and Staff Program Manager and Senior Manager Prod and Business Development
Freescale Semiconductor 2006 - 2010
Mfg Excellence Micro Bu Atx
Infineon Technologies Burlington Vt 2003 - 2006
Product and Test Team Leader
Education:
Wichita State University
Skills:
Semiconductors
Ic
Semiconductor Industry
Asic
Soc
Cross Functional Team Leadership
Cmos
Electronics
Debugging
Failure Analysis

Publications

Us Patents

Room Temperature Drift Suppression Via Soft Program After Erase

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US Patent:
20090135659, May 28, 2009
Filed:
Nov 27, 2007
Appl. No.:
11/945785
Inventors:
Gwyn Robert Jones - Sunnyvale CA, US
Mark W. Randolph - San Jose CA, US
John Darilek - Bastrop TX, US
Sean O'Mullan - Austin TX, US
Jacob Marcantel - Dripping Spring TX, US
Rick Anundson - Austin TX, US
Adam Shackleton - Austin TX, US
Xiaojian Chu - Austin TX, US
Abhijit Raghunathan - Austin TX, US
Asif Arfi - Austin TX, US
Gulzar Ahmed Kathawala - Santa Clara CA, US
Zhizheng Liu - San Jose CA, US
Sung-Chul Lee - Cupertino CA, US
Assignee:
SPANSION LLC - Sunnyvale CA
International Classification:
G11C 16/06
US Classification:
36518529
Abstract:
Providing for suppression of room temperature electronic drift in a flash memory cell is provided herein. For example, a soft program pulse can be applied to the flash memory cell immediately after an erase pulse. The soft program pulse can help to mitigate dipole effects caused by non-combined electrons and holes in the memory cell. Specifically, by utilizing a relatively low gate voltage, the soft program pulse can inject electrons into the flash memory cell proximate a distribution of uncombined holes associated with the erase pulse in order to facilitate rapid combination of such particles. Rapid combination in this manner reduces dipole effects caused by non-combined distributions of opposing charge within the memory cell, reducing room temperature program state drift
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Asif Arfi from Austin, TX, age ~57 Get Report