Artashes Amamchyan

6939983, Sep 6, 2005

May 7, 2004

10/841127

Deodatta Vinayak Shenai-Khatkhate - Danvers MA, US
Artashes Amamchyan - Wakefield MA, US
Michael Brendan Power - Newburyport MA, US
James Edward Felton - Hudson NH, US

Rohm and Haas Electronic Materials, LLC - Marlborugh MA

C07F009/02
C07F009/90
C07F009/94

556 70, 568 8, 568 16

A method of preparing Group VA organometal compounds in high yield and high purity by the reaction of a Grignard reagent with a Group VA metal halide in certain ethereal solvents is provided. A method of preparing Group VA organometal hydrides is also provided.

6956127, Oct 18, 2005

Jan 17, 2003

10/346275

Deodatta Vinayak Shenai-Khatkhate - Danvers MA, US
Michael Brendan Power - Newburyport MA, US
Artashes Amamchyan - Wakefield MA, US

Shipley Company, L.L.C. - Marlborough MA

C07F009/72
C07F009/02
C07F009/90
C23C016/00
H01L021/44

556 70, 568 8, 568 16, 427587, 427593, 438604, 438606, 438681

Disclosed are methods of preparing monoalkyl Group VA metal dihalide compounds in high yield and high purity by the reaction of a Group VA metal trihalide with an organo lithium reagent or a compound of the formula RMX, where R is an alkyl, Mis a Group IIIA metal, X is a halogen and n is an integer fro 1 to 3. Such monoalkyl Group VA metal dihalide compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities. Monoalkyl Group VA metal dihydride compounds can be easily produced in high yield and high purity by reducing such monoalkyl Group VA metal dihalide compounds.

7166734, Jan 23, 2007

Sep 2, 2005

11/219227

Deodatta Vinayak Shenai-Khatkhate - Danvers MA, US
Artashes Amamchyan - Wakefield MA, US

Rohm and Haas Electronic Materials LLC - Marlborough MA

C07F 5/06

556187, 556 1, 556129, 556170

Organometallic compounds of Group IIB and IIIA metals that are substantially pure and contain low levels of oxygenated impurities are provided. Also provided are methods of preparing such organometallic compounds.

20020188145, Dec 12, 2002

Apr 6, 2002

10/118382

Deodatta Shenai-Khatkhate - Danvers MA, US
Michael Power - Newburyport MA, US
Artashes Amamchyan - Wakefield MA, US

Shipley Company, L.L.C. - Marlborough MA

C07F009/70
C07F009/90
C07F009/94

556/064000

Disclosed are methods of preparing trialkyl Group VA metal compounds in high yield and high purity. Such trialkyl Group VA metal compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities.

20030199704, Oct 23, 2003

Nov 23, 2002

10/303434

Deodatta Shenai-Khatkhate - Danvers MA, US
Michael Power - Newburyport MA, US
Artashes Amamchyan - Wakefield MA, US

Shipley Company, L.L.C. - Marlborough MA

C07F009/94
C07F009/90
C07F009/70
C07F009/02
C07F001/02

556/070000, 568/016000, 260/66500R

Disclosed are methods of preparing monoalkyl Group VA metal dihalide compounds in high yield and high purity by the reaction of a Group VA metal trihalide with an organo lithium reagent or a compound of the formula RMXwhere R is an alkyl, Mis a Group IIIA metal, X is a halogen and n is an integer fro 1 to 3. Such monoalkyl Group VA metal dihalide compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities.

20130211118, Aug 15, 2013

Aug 15, 2012

13/586751

Ravindra S. Dixit - Lake Jackson TX, US
Hua Bai - Lake Jackson TX, US
Curtis D. Modtland - Lake Jackson TX, US
Robert A. Ware - Wellesley MA, US
Christopher P. Christenson - Seguin TX, US
Deodatta Vinayak Shenai-Khatkhate - Danvers MA, US
Artashes Amamchyan - Melrose MA, US
Kenneth M. Crouch - Shrewsbury MA, US
Robert F. Polcari - Winchendon MA, US

Rohm and Haas Electronic Materials LLC - Marlborough MA
Dow Global Technologies Inc. - Midland MI

C07F 7/00
C07B 61/00
C07F 5/00

556 51, 556 1, 422198

A method of continuously manufacturing organometallic compounds is provided where two or more reactants are conveyed to a reactor having a laminar flow contacting zone, a heat transfer zone, and a mixing zone having a turbulence-promoting device; and causing the reactants to form the organometallic compound.

20150174552, Jun 25, 2015

Mar 9, 2015

14/642704

- Midland MI, US
- Marlborough MA, US
Curtis D. MODTLAND - Lake Jackson TX, US
Robert A. WARE - Wellesley MA, US
Christopher P. CHRISTENSON - Seguin TX, US
Deodatta Vinayak SHENAI-KHATKHATE - Danvers MA, US
Artashes AMAMCHYAN - Bedford MA, US
Kenneth M. CROUCH - Shrewsbury MA, US
Robert F. POLCARI - Winchendon MA, US

B01J 19/24

An apparatus for continuously manufacturing organometallic compounds is provided where the apparatus has a source of a first reactant stream wherein the first reactant comprises a metal; a source of a second reactant stream; a laminar flow contacting zone for cocurrently contacting the first reactant stream and the second reactant stream; a mixing zone comprising a turbulence-promoting device; and a heat transfer zone.