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Arnold V Kholodenko

from San Francisco, CA
Age ~79
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Also known as:
Arnold Dora Kholodenko, Arnold D Kholodenko, Aronald V Kholodenko, Kholodenko Arnold, Arnold Kholoenko
Phone and address:
1600 Ulloa St, San Francisco, CA 94116
(415) 753-8253
Related to:
Ann Margaret Manyak, 54Jacob Manyak, 84Samuel Manyak, 26Tatyana Manyak, 54Julia Manyak, 51
Connected to:
Dora Kholodenko, 79Vadym Kholodenko, 38Vitali I Kholodov, 42Theresa S Kholoma, 49Badr R Kholousi, 85Leann M Kholousi, 63Angelica Kholstinin, 43Deepesh K Kholwadwala, 54Khaled T Kholy, 64Peter Khom, 32

Arnold Kholodenko Phones & Addresses

  • 1600 Ulloa St, San Francisco, CA 94116 (415) 753-8253
  • 1747 Eucalyptus Dr, San Francisco, CA 94132 (415) 753-8253
  • Hockessin, DE
  • Haltom City, TX

Work

Position: Clerical/White Collar

Education

Degree: Associate degree or higher

Emails

a***[email protected]

Resumes

Resumes

Arnold Kholodenko Photo 1

Executive Director

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Location:
1600 Ulloa St, San Francisco, CA 94127
Industry:
Semiconductors
Work:
Unipixel, Inc 2014 - 2015
Senior Vice President, Research and Development
Questrade Financial Group 2009 - 2014
Vice President, Algorithmic High-Frequency Trading Technology and Operation
Artech Consulting Llc 2009 - 2014
Executive Director
Lam Research 2005 - 2008
Senior Director
Applied Materials 1994 - 2005
Senior Director, Distinquished Member of Technical Staff
Education:
Moscow Aviation Institute (National Research University)
Doctorates, Doctor of Philosophy, Aerospace Engineering
Skills:
Semiconductors
Product Engineering
Thin Films
Engineering Management
Nanotechnology
Solar Energy
Semiconductor Industry
Pvd
Robotics
R&D
Silicon
Metrology
Design of Experiments
Product Development
Manufacturing
Cvd
Management
Cross Functional Team Leadership
Spc
Interests:
Collecting Coins
Career
Collecting Antiques
Electronics
Traveling
Home Improvement
International Traavel
Reading
Stamp Collecting
The Arts
Travel
Collecting
Home Decoration
Languages:
English
Arnold Kholodenko Photo 2

Arnold Kholodenko

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Location:
Santa Clara, CA
Industry:
Semiconductors

Publications

Us Patents

Dielectric Covered Electrostatic Chuck

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US Patent:
6414834, Jul 2, 2002
Filed:
Jun 16, 2000
Appl. No.:
09/596108
Inventors:
Edwin C. Weldon - Los Gatos CA
Kenneth S. Collins - San Jose CA
Arik Donde - Cupertino CA
Brian Lue - Mountain View CA
Dan Maydan - Los Altos Hills CA
Robert J. Steger - Cupertino CA
Timothy Dyer - Tempe AZ
Ananda H. Kumar - Milpitas CA
Alexander M. Veytser - Mountain View CA
Kadthala R. Narendrnath - San Jose CA
Semyon L. Kats - San Francisco CA
Arnold Kholodenko - San Francisco CA
Shamouil Shamouilian - San Jose CA
Dennis S. Grimard - Ann Arbor MI
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H02N 1300
US Classification:
361234
Abstract:
An electrostatic chuck useful for holding a substrate in a high density plasma, comprises an electrode at least partially covered by a semiconducting dielectric , wherein the semiconducting dielectric may have an electrical resistance of from about 5Ã10 cm to about 8Ã10 cm.

Semiconductor Process Chamber Having Improved Gas Distributor

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US Patent:
6449871, Sep 17, 2002
Filed:
Sep 8, 2000
Appl. No.:
09/657997
Inventors:
Arnold Kholodenko - San Francisco CA
Dmitry Lubomirsky - Cupertino CA
Peter K. Loewenhardt - San Jose CA
Shamouil Shamouilian - San Jose CA
Assignee:
Applied Materials Inc. - Santa Clara CA
International Classification:
F26B 334
US Classification:
34255, 34258, 34413, 34418, 34420, 34526, 34565
Abstract:
A process chamber for processing a semiconductor substrate, comprises a support for supporting a substrate A gas distributor provided for introducing process gas into the chamber comprises a gas nozzle for injecting process gas at an inclined angle relative to a plane of the substrate into the chamber Optionally, a gas flow controller controls and pulses the flow of process gas through one or more gas nozzles An exhaust is used to exhaust the process gas from the chamber.

Electrostatic Chuck Having Improved Electrical Connector And Method

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US Patent:
6462928, Oct 8, 2002
Filed:
May 7, 1999
Appl. No.:
09/306944
Inventors:
Shamouil Shamouilian - San Jose CA
You Wang - Cupertino CA
Surinder S. Bedi - Fremont CA
Arnold Kholodenko - San Francisco CA
Alexander M. Veytser - Mountain View CA
Kadthala R. Narendrnath - San Francisco CA
Semyon L. Kats - San Francisco CA
Dennis S. Grimard - Ann Arbor MI
Wing L. Cheng - Sunnyvale CA
Ananda H. Kumar - Milpitas CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H02N 1300
US Classification:
361234
Abstract:
An electrostatic chuck comprises an electrical connector which is connected to the electrode to conduct an electrical charge to the electrode The electrical connector comprises a refractory metal having a melting temperature of at least about 1500Â C. , such as for example, tungsten, titanium, nickel, tantalum, molybdenum, or alloys thereof. Preferably, the electrical connector is bonded to the electrode by a metal having a softening temperature of less than about 600Â C. , such as aluminum, indium, or low melting point alloys.

Substrate Support Member

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US Patent:
6464790, Oct 15, 2002
Filed:
Mar 17, 2000
Appl. No.:
09/527341
Inventors:
Semyon Sherstinsky - San Francisco CA
Arnold Kholodenko - San Francisco CA
Calvin Augason - Los Altos CA
Samuel Wilson - Sunnyvale CA
Michael Phillips - Redwood Estates CA
Leonel Zuniga - San Jose CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 1600
US Classification:
118715, 118500, 269 21
Abstract:
The present invention generally provides a support member adapted to provide vacuum chucking. In one aspect, a support member having an upper surface having an outer, raised portion defining an inner, recessed portion is provided. The inner recessed portion is in fluid communication with a vacuum supply. The support member may include a plurality of raised support portions having one or more recessed portions adjacent thereto, the raised support portions having equal heights above the recessed portions. The transition between the raised portions and the recessed portions is gradual and the orifices formed by the holes extending through the upper surface of the substrate support are rounded to eliminate sharp edges and rapid changes in height at the upper surface.

Substrate Support Member For A Processing Chamber

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US Patent:
6464795, Oct 15, 2002
Filed:
May 3, 2000
Appl. No.:
09/563573
Inventors:
Semyon Sherstinsky - San Francisco CA
Calvin Augason - Los Altos CA
Leonel A. Zuniga - San Jose CA
Jun Zhao - Cupertino CA
Talex Sajoto - Campbell CA
Leonid Selyutin - San Leandro CA
Joseph Yudovsky - Campbell CA
Maitreyee Mahajani - San Jose CA
Steve G. Ghanayem - Sunnyvale CA
Tai T. Ngo - Dublin CA
Arnold Kholodenko - San Francisco CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
G23C 1600
US Classification:
118728, 118715, 118725
Abstract:
A support member for supporting a substrate in a process chamber, the support member having a substrate support surface with one or more isolated recessed areas. A vacuum channel and a gas channel are formed in the support member along a common plane and are coupled to a vacuum source and gas source respectively. The gas channel comprises two or more concentrically disposed annular gas channels encompassing the vacuum channel. The vacuum channel is coupled to the support surface, and in particular to the one or more recessed areas, by a plurality of conduits. A portion of the conduits is disposed diametrically exterior to at least one of the annular gas channels and communicates with the vacuum channel via bypass channels.

Magnetically Enhanced Inductively Coupled Plasma Reactor With Magnetically Confined Plasma

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US Patent:
6471822, Oct 29, 2002
Filed:
Mar 5, 1999
Appl. No.:
09/263001
Inventors:
Gerald Yin - Cupertino CA
Peter Loewenhardt - San Jose CA
Arnold Kholodenko - San Francisco CA
Hong Chin Shan - San Jose CA
Chii Lee - Fremont CA
Dan Katz - Agoura Hills CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H05H 100
US Classification:
15634549, 216 67, 216 68, 118723 E, 118723 I, 118723 IR
Abstract:
The present invention provides a plasma reactor having a plasma source chamber capable of generating a high density plasma typically utilizing a helicon wave. The plasma is delivered to a process chamber having a workpiece. The present invention may provide a plurality of magnets, each being located longitudinally around an axis perpendicular to the plane of the workpiece to form a magnetic bucket that extends the length of the side wall of the processing chamber and across a workpiece insertion opening and a vacuum pump opening. The magnetic bucket of the present invention may be formed so that the pedestal need not be raised to be within the bucket, or may be formed by permanent magnets oriented with one pole of each magnet facing the interior of the processing chamber, or with opposite poles of adjacent magnets facing each other, thereby forming cusps around the axis perpendicular to the plane of the workpiece. Current carrying conductors may generate all or part of the magnetic bucket. The present invention may provide an inner wall member secured within the processing chamber.

Plasma Chamber Support Having Dual Electrodes

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US Patent:
6478924, Nov 12, 2002
Filed:
Mar 7, 2000
Appl. No.:
09/513992
Inventors:
Shamouil Shamouilian - San Jose CA
Arnold Kholodenko - San Francisco CA
Kwok Manus Wong - San Jose CA
Alexander M. Veytser - Mountain View CA
Dennis S. Grimard - Ann Arbor MI
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H05H 100
US Classification:
15634548, 15634551, 118723 I, 118728, 361234, 279128
Abstract:
A process chamber capable of processing a substrate in a plasma comprises a dielectric covering a first electrode and a second electrode , a conductor supporting the dielectric , and a voltage supply to supply an RF voltage to the first electrode or the second electrode in the dielectric. The first electrode capacitively couples with a process electrode to energize process gas in the process chamber and RF voltage applied to the second electrode is capacitively coupled to the conductor and through a collar or the second electrode is directly capacitively coupled through the collar.

Substrate Support Pedestal

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US Patent:
6490145, Dec 3, 2002
Filed:
Jul 18, 2001
Appl. No.:
09/908819
Inventors:
Arnold V. Kholodenko - San Francisco CA
You Wang - Cupertino CA
Tony S. Kaushal - Cupertino CA
Semyon L. Kats - San Francisco CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01T 2300
US Classification:
361234
Abstract:
A ceramic substrate support and methods for fabricating the same are provided. In one embodiment, a ceramic substrate support for supporting a substrate includes a ceramic body and a porous member disposed therein. The ceramic body generally has an upper portion and a lower portion. The upper portion includes a support surface while the lower portion includes a bottom surface. At least one passage is disposed in the lower portion of the ceramic body. A first end of the passage is at least partially closed by the upper portion of the ceramic body. At least one outlet is disposed through the portion of the ceramic body through the upper portion of the ceramic body and fluidly couples the passage to the support surface.
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Arnold V Kholodenko from San Francisco, CA, age ~79 Get Report