Search

Armen Kirakosian Phones & Addresses

  • Fremont, CA
  • 161 N Civic Dr APT 126, Walnut Creek, CA 94596 (925) 457-1057
  • 1265 Homestead Ave, Walnut Creek, CA 94598 (925) 947-0514
  • 45 Tahoe Ct, Walnut Creek, CA 94596 (925) 947-0514
  • 2120 University Ave, Madison, WI 53705 (608) 231-9829
  • 2302 University Ave, Madison, WI 53705 (608) 236-9835
  • Glendale, CA
  • Phoenix, AZ

Work

Company: Western digital Jul 2017 Position: Technologist

Education

Degree: Doctorates, Doctor of Philosophy School / High School: University of Wisconsin - Madison 1997 to 2003 Specialities: Physics

Skills

Semiconductors • Characterization • Design of Experiments • Semiconductor Industry • R&D • Plasma Etch • Materials Science • Nanotechnology • Physics • Thin Films • Mems • Failure Analysis • Jmp • Cvd • Uhv • Metrology • Etching • Sputtering • Spc • Pvd • Silicon • Photolithography • Plasma Physics • Afm • Scanning Electron Microscopy • Process Integration • Semiconductor Process • Pecvd • Sensors • Vacuum • Nanofabrication • Semiconductor Device • Lithography • Yield • Research and Development • Ultra High Vacuum

Languages

English • Russian • Armenian

Interests

Children • Economic Empowerment • Environment • Education • Science and Technology • Human Rights • Animal Welfare

Industries

Computer Hardware

Resumes

Resumes

Armen Kirakosian Photo 1

Technologist

View page
Location:
3355 Michelson Dr, Irvine, CA 92612
Industry:
Computer Hardware
Work:
Western Digital
Technologist

Western Digital Jan 2013 - Jul 2017
Principal Engineer - Rie at Western Digital

Lam Research Apr 2007 - Jan 2013
Process Engineer

Lawrence Berkeley National Laboratory Apr 2003 - Mar 2007
Post Doctoral Fellow
Education:
University of Wisconsin - Madison 1997 - 2003
Doctorates, Doctor of Philosophy, Physics
California State University, Los Angeles 1993 - 1995
Bachelors, Bachelor of Science, Physics
Ural State Technical University 1989 - 1992
Skills:
Semiconductors
Characterization
Design of Experiments
Semiconductor Industry
R&D
Plasma Etch
Materials Science
Nanotechnology
Physics
Thin Films
Mems
Failure Analysis
Jmp
Cvd
Uhv
Metrology
Etching
Sputtering
Spc
Pvd
Silicon
Photolithography
Plasma Physics
Afm
Scanning Electron Microscopy
Process Integration
Semiconductor Process
Pecvd
Sensors
Vacuum
Nanofabrication
Semiconductor Device
Lithography
Yield
Research and Development
Ultra High Vacuum
Interests:
Children
Economic Empowerment
Environment
Education
Science and Technology
Human Rights
Animal Welfare
Languages:
English
Russian
Armenian

Publications

Us Patents

Etch With Mixed Mode Pulsing

View page
US Patent:
20140051256, Feb 20, 2014
Filed:
Aug 15, 2012
Appl. No.:
13/586793
Inventors:
Qinghua ZHONG - Fremont CA, US
Siyi LI - Fremont CA, US
Armen KIRAKOSIAN - Walnut Creek CA, US
Yifeng ZHOU - Fremont CA, US
Ramkumar VINNAKOTA - Sunnyvale CA, US
Ming-Shu KUO - San Ramon CA, US
Srikanth RAGHAVAN - Fremont CA, US
Yoshie KIMURA - Castro Valley CA, US
Tae Won KIM - Dublin CA, US
Gowri KAMARTHY - Pleasanton CA, US
Assignee:
LAM RESEARCH CORPORATION - Fremont CA
International Classification:
H01L 21/3065
US Classification:
438717, 438723, 257E21218
Abstract:
A method for etching a dielectric layer disposed below a patterned organic mask with features, with hardmasks at bottoms of some of the organic mask features is provided. An etch gas is provided. The etch gas is formed into a plasma. A bias RF with a frequency between 2 and 60 MHz is provided that provides pulsed bias with a pulse frequency between 10 Hz and 1 kHz wherein the pulsed bias selectively deposits on top of the organic mask with respect to the dielectric layer.

System, Method And Apparatus For Real Time Control Of Rapid Alternating Processes (Rap)

View page
US Patent:
20130048082, Feb 28, 2013
Filed:
Aug 22, 2011
Appl. No.:
13/215159
Inventors:
Mirzafer Abatchev - Fremont CA, US
Bradley Howard - Fremont CA, US
Armen Kirakosian - Fremont CA, US
International Classification:
F17D 3/00
US Classification:
137 1, 137551
Abstract:
A rapid alternating process system and method of operating a rapid alternating process system includes a rapid alternating process chamber, a plurality of process gas sources coupled to the rapid alternating process chamber, wherein each one of the plurality of process gas sources includes a corresponding process gas source flow controller, a bias signal source coupled to the rapid alternating process chamber, a process gas detector coupled to the rapid alternating process chamber, a rapid alternating process chamber controller coupled to the rapid alternating process chamber, the bias signal source, the process gas detector and the plurality of process gas sources, the rapid alternating process chamber controller including logic for initiating a first rapid alternating process phase including: logic for inputting a first process gas into a rapid alternating process chamber, logic for detecting the first process gas in the rapid alternating process chamber, and logic for applying a corresponding first phase bias signal to the rapid alternating process chamber after the first process gas is detected in the rapid alternating process chamber.

Near-Field Transducer (Nft) For A Heat Assisted Magnetic Recording (Hamr) Device

View page
US Patent:
20180122407, May 3, 2018
Filed:
Jan 2, 2018
Appl. No.:
15/859922
Inventors:
- Fremont CA, US
XIAOKAI ZHANG - DUBLIN CA, US
ARMEN KIRAKOSIAN - WALNUT CREEK CA, US
JINWEN WANG - PLEASANTON CA, US
TSUNG YUAN CHEN - SAN RAMON CA, US
YUFENG HU - FREMONT CA, US
International Classification:
G11B 5/127
G11B 5/31
G11B 5/00
Abstract:
A method and system provides a near-field transducer (NFT) for a heat assisted magnetic recording (HAMR) transducer. The method and system include forming the disk of the NFT and forming the pin of the NFT. The disk is formed from a first material. The pin is formed from a second material different from the first material. The pin contacts the disk. At least a portion of the pin is between the disk and an air-bearing surface (ABS) location.

System, Method And Apparatus For Real Time Control Of Rapid Alternating Processes (Rap)

View page
US Patent:
20170031352, Feb 2, 2017
Filed:
Oct 14, 2016
Appl. No.:
15/294619
Inventors:
- Fremont CA, US
Bradley Howard - Fremont CA, US
Armen Kirakosian - Fremont CA, US
International Classification:
G05B 19/418
Abstract:
A method for controlling an etch operation which is a rapid alternating process having etch and passivation phases is described. The method includes (a) supplying source power to an inductive coil of a plasma chamber, (b) initiating supply of a first process gas that flows along a distance separating a mass flow controller and the chamber, (c) detecting an optical signal from plasma generated within the chamber, with the optical signal being analyzed to identify a predefined change in amplitude relative to time, (d) triggering activation of bias power upon identifying the predefined change, the bias power being held active for a predefined amplitude duration during which the etch phase is primarily active, (e) initiating supply of a second process gas during a period in which the passivation phase is primarily active and the bias power is inactive, and (f) repeating (b)-(e) for additional cycles while processing an etch operation.

In-Situ Metal Residue Clean

View page
US Patent:
20140179106, Jun 26, 2014
Filed:
Dec 21, 2012
Appl. No.:
13/725848
Inventors:
- Fremont CA, US
Yifeng ZHOU - Fremont CA, US
Ming-Shu KUO - San Ramon CA, US
Armen KIRAKOSIAN - Walnut Creek CA, US
Siyi LI - Fremont CA, US
Srikanth RAGHAVAN - Fremont CA, US
Ramkumar VINNAKOTA - Sunnyvale CA, US
Yoshie KIMURA - Castro Valley CA, US
Tae Won KIM - Dublin CA, US
Gowri KAMARTHY - Pleasanton CA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
H01L 21/306
US Classification:
438689
Abstract:
A method for forming devices in an oxide layer over a substrate, wherein a metal containing layer forms at least either an etch stop layer below the oxide layer or a patterned mask above the oxide layer, wherein a patterned organic mask is above the oxide layer is provided. The substrate is placed in a plasma processing chamber. The oxide layer is etched through the patterned organic mask, wherein metal residue from the metal containing layer forms metal residue on sidewalls of the oxide layer. The patterned organic mask is stripped. The metal residue is cleaned by the steps comprising providing a cleaning gas comprising BCland forming a plasma from the cleaning gas. The substrate is removed from the plasma processing chamber.
Armen Kirakosian from Fremont, CA, age ~51 Get Report