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Armen Kirakosian Phones & Addresses

  • 1265 Homestead Ave, Walnut Creek, CA 94598 (925) 947-0514
  • 45 Tahoe Ct, Walnut Creek, CA 94596 (925) 947-0514
  • 2120 University Ave, Madison, WI 53705 (608) 231-9829
  • 2302 University Ave, Madison, WI 53726 (608) 236-9835
  • Middleton, WI
  • Glendale, CA
  • Phoenix, AZ

Work

Company: Western digital Jan 2013 to Aug 2013 Address: Fremont, CA Position: Staff engineer - rie

Education

Degree: Ph.D. School / High School: University of Wisconsin-Madison 1997 to 2003 Specialities: Physics

Skills

Semiconductors • Nanotechnology • Design of Experiments • Characterization • Materials Science • Plasma Etch

Industries

Semiconductors

Resumes

Resumes

Armen Kirakosian Photo 1

Staff Engineer - Rie At Western Digital

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Position:
Staff Engineer - RIE at Western Digital
Location:
San Francisco Bay Area
Industry:
Semiconductors
Work:
Western Digital - Fremont, CA since Jan 2013
Staff Engineer - RIE

Lam Research - Fremont, CA Apr 2007 - Jan 2013
Process Engineer

Lawrence Berkeley National Laboratory Apr 2003 - Mar 2007
Post Doc
Education:
University of Wisconsin-Madison 1997 - 2003
Ph.D., Physics
California State University-Los Angeles 1993 - 1995
Bachelor of Science (BS), Physics
Skills:
Semiconductors
Nanotechnology
Design of Experiments
Characterization
Materials Science
Plasma Etch

Publications

Us Patents

Etch With Mixed Mode Pulsing

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US Patent:
2014005, Feb 20, 2014
Filed:
Aug 15, 2012
Appl. No.:
13/586793
Inventors:
Qinghua ZHONG - Fremont CA,
Siyi LI - Fremont CA,
Armen KIRAKOSIAN - Walnut Creek CA,
Yifeng ZHOU - Fremont CA,
Ramkumar VINNAKOTA - Sunnyvale CA,
Ming-Shu KUO - San Ramon CA,
Srikanth RAGHAVAN - Fremont CA,
Yoshie KIMURA - Castro Valley CA,
Tae Won KIM - Dublin CA,
Gowri KAMARTHY - Pleasanton CA,
Assignee:
LAM RESEARCH CORPORATION - Fremont CA
International Classification:
H01L 21/3065
US Classification:
438717, 438723, 257E21218
Abstract:
A method for etching a dielectric layer disposed below a patterned organic mask with features, with hardmasks at bottoms of some of the organic mask features is provided. An etch gas is provided. The etch gas is formed into a plasma. A bias RF with a frequency between 2 and 60 MHz is provided that provides pulsed bias with a pulse frequency between 10 Hz and 1 kHz wherein the pulsed bias selectively deposits on top of the organic mask with respect to the dielectric layer.

System, Method And Apparatus For Real Time Control Of Rapid Alternating Processes (Rap)

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US Patent:
2013004, Feb 28, 2013
Filed:
Aug 22, 2011
Appl. No.:
13/215159
Inventors:
Mirzafer Abatchev - Fremont CA,
Bradley Howard - Fremont CA,
Armen Kirakosian - Fremont CA,
International Classification:
F17D 3/00
US Classification:
137 1, 137551
Abstract:
A rapid alternating process system and method of operating a rapid alternating process system includes a rapid alternating process chamber, a plurality of process gas sources coupled to the rapid alternating process chamber, wherein each one of the plurality of process gas sources includes a corresponding process gas source flow controller, a bias signal source coupled to the rapid alternating process chamber, a process gas detector coupled to the rapid alternating process chamber, a rapid alternating process chamber controller coupled to the rapid alternating process chamber, the bias signal source, the process gas detector and the plurality of process gas sources, the rapid alternating process chamber controller including logic for initiating a first rapid alternating process phase including: logic for inputting a first process gas into a rapid alternating process chamber, logic for detecting the first process gas in the rapid alternating process chamber, and logic for applying a corresponding first phase bias signal to the rapid alternating process chamber after the first process gas is detected in the rapid alternating process chamber.
Armen Kirakosian from Walnut Creek, CA, age ~49 Get Report