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Anupama K Mallikarjunan

from Mendham, NJ
Age ~49
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Also known as:
Anupama P Mallikarjunan, Anupama N
Connected to:
Arindam Mallik, 45Badri Mallikarjunan, 44Manoj K Mallik, 50Mrinmoy Mallik, 54Rajasri Mallikarjuna, 42Rishi Mallik, 38Tilak K Mallik, 78Andrew P Mallin, 48Jay Mallin, 97Judith Y Mallin, 87

Anupama Mallikarjunan Phones & Addresses

  • Mendham, NJ
  • 1640 Windemere Dr, San Marcos, CA 92078
  • 2334 15Th St, Troy, NY 12180
  • Morris Plains, NJ
  • Macungie, PA
  • Newburgh, NY
  • Kingston, NY
  • Drums, PA

Work

Company: Air products and chemicals, inc Jan 2013 Address: Carlsbad, CA Position: Lead research scientist, electronics r&d

Education

School / High School: Rensselaer Polytechnic Institute 1996 to 2002

Skills

Semiconductors

Languages

English

Industries

Semiconductors

Resumes

Resumes

Anupama Mallikarjunan Photo 1

Global Business Marketing Manager

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Location:
1640 Windemere Dr, San Marcos, CA 92078
Industry:
Semiconductors
Work:
Air Products and Chemicals, Inc - Carlsbad, CA since Jan 2013
Lead Research Scientist, Electronics R&D
Air Products and Chemicals, Inc Jun 2008 - Jan 2013
Electronics R&D
IBM May 2003 - May 2008
Advisory Engineer
Texas Instruments Jun 2001 - Sep 2001
Summer Intern
Education:
Rensselaer Polytechnic Institute 1996 - 2002
Indian Institute of Technology, Madras 1992 - 1996
B Tech, Metallurgical Eng
Skills:
Semiconductors
Languages:
English

Publications

Us Patents

Selective Etching And Formation Of Xenon Difluoride

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US Patent:
8278222, Oct 2, 2012
Filed:
Jan 27, 2009
Appl. No.:
12/360588
Inventors:
Dingjun Wu - Macungie PA, US
Anupama Mallikarjunan - Macungie PA, US
Andrew David Johnson - Doylestown PA, US
Assignee:
Air Products and Chemicals, Inc. - Allentown PA
International Classification:
H01L 21/302
H01L 21/461
US Classification:
438706, 438707, 438708, 438719
Abstract:
This invention relates to a process for selective removal of materials, such as: silicon, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, tantalum, niobium, boron, phosphorus, germanium, arsenic, and mixtures thereof, from silicon dioxide, silicon nitride, nickel, aluminum, TiNi alloy, photoresist, phosphosilicate glass, boron phosphosilicate glass, polyimides, gold, copper, platinum, chromium, aluminum oxide, silicon carbide and mixtures thereof. The process is related to the important applications in the cleaning or etching process for semiconductor deposition chambers and semiconductor tools, devices in a micro electro mechanical system (MEMS), and ion implantation systems. Methods of forming XeFby reacting Xe with a fluorine containing chemical are also provided, where the fluorine containing chemical is selected from the group consisting of F, NF, CF, CF, CF, SF, a plasma containing F atoms generated from an upstream plasma generator and mixtures thereof.

Dielectric Barrier Deposition Using Nitrogen Containing Precursor

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US Patent:
20100291321, Nov 18, 2010
Filed:
May 3, 2010
Appl. No.:
12/772518
Inventors:
Anupama Mallikarjunan - Macungie PA, US
Raymond Nicholas Vrtis - Orefield PA, US
Laura M. Matz - Allentown PA, US
Mark Leonard O'Neill - San Marcos CA, US
Andrew David Johnson - Doylestown PA, US
Manchao Xiao - San Diego CA, US
Assignee:
AIR PRODUCTS AND CHEMICALS, INC. - Allentown PA
International Classification:
H05H 1/24
US Classification:
427579
Abstract:
A process for forming a silicon carbonitride barrier dielectric film between a dielectric film and a metal interconnect of an integrated circuit substrate, comprising the steps of;wherein R, R, R″ and R′″ are each individually selected from hydrogen, linear or branched saturated or unsaturated alkyl, or aromatic; wherein x÷y+z=4; z=1-3; but R, R cannot both be hydrogen;

Precursors For Photovoltaic Passivation

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US Patent:
20130220410, Aug 29, 2013
Filed:
Aug 27, 2012
Appl. No.:
13/595419
Inventors:
Mary Kathryn Haas - Emmaus PA, US
Anupama Mallikarjunan - Macungie PA, US
Robert Gordon Ridgeway - Quakertown PA, US
Katherine Anne Hutchison - Sunnyvale CA, US
Michael T. Savo - Bethlehem PA, US
Assignee:
Air Products and Chemicals, Inc. - Allentown PA
International Classification:
H01L 31/0216
US Classification:
136256, 438 57
Abstract:
Deposition methods are disclosed for producing a passivation layer on a photovoltaic cell. Method includes depositing a passivation layer comprising at least a bi-layer further comprising a silicon oxide and a silicon nitride layer. In one aspect, the silicon precursor(s) used for the deposition of the silicon oxide layer or the silicon nitride layer, respectively, is selected from the family SiRHor selected from the family SiRH, silane, and combinations thereof, wherein in SiRHx+y=4, y≠4 and R may be independently selected from the group consisting of C-Clinear alkyl, wherein the ligand may be saturated or unsaturated; C-Cbranched alkyl, wherein the ligand may be saturated or unsaturated; C-Ccyclic alkyl, wherein the ligand may be saturated, unsaturated, or aromatic; and NR*wherein R* can be independently hydrogen; or linear, branched, cyclic, saturated, or unsaturated alkyl. Photovoltaic devices containing the passivation layers are also disclosed.

Oxygen Containing Precursors For Photovoltaic Passivation

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US Patent:
20130247971, Sep 26, 2013
Filed:
Sep 11, 2012
Appl. No.:
13/610311
Inventors:
Mary Kathryn Haas - Emmaus PA, US
Anupama Mallikarjunan - Macungie PA, US
Robert Gordon Ridgeway - Quakertown PA, US
Katherine Anne Hutchison - Sunnyvale CA, US
Michael T Savo - Bethlehem PA, US
Assignee:
AIR PRODUCTS AND CHEMICALS, INC. - Allentown PA
International Classification:
H01L 31/0216
US Classification:
136256, 438 72
Abstract:
Methods for depositing a passivation layer on a photovoltaic cell are disclosed. Methods include depositing a passivation layer comprising at least a bi-layer further comprising a silicon oxide and a silicon nitride layer. The silicon precursor(s) used for the deposition of the silicon oxide layer or the silicon nitride layer, respectively, is selected from the family of Si(OR)R, or from the family of SiRH, silane, and combinations thereof; wherein x+y=4, y≠4; Ris C-Calkyl; Ris selected from the group consisting of hydrogen, C-Calkyl, and NR*; R is C-Calkyl or NR*; wherein R* can be hydrogen or C-Calkyl; C-Calkyl can be linear, branched or cyclic, the ligand can be saturated, unsaturated, or aromatic (for cyclic alkyl). Photovoltaic devices containing the passivation layers are also disclosed.

Organoaminodisilane Precursors And Methods For Depositing Films Comprising Same

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US Patent:
20130323435, Dec 5, 2013
Filed:
May 24, 2013
Appl. No.:
13/902300
Inventors:
Xinjian Lei - Vista PA, US
Daniel P. Spence - Carlsbad CA, US
Haripin Chandra - Vista CA, US
Bing Han - Beijing, CN
Mark Leonard O'Neill - San Marcos CA, US
Steven Gerard Mayorga - Oceanside CA, US
Anupama Mallikarjunan - San Marcos CA, US
Assignee:
Air Products And Chemicals, Inc. - Allentown PA
International Classification:
C09D 1/00
US Classification:
427579, 10628711, 427255394, 427578, 556410, 546 14, 544 69, 548406, 428 341
Abstract:
Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I:wherein Ris selected from linear or branched Cto Calkyl group, linear or branched Cto Calkenyl group, linear or branched Cto Calkynyl group, Cto Cdialkylamino group, electron withdrawing group, and Cto Caryl group; Ris selected from hydrogen, linear or branched Cto Calkyl group, linear or branched Cto Calkenyl group, linear or branched Cto Calkynyl group, Cto Cdialkylamino group, Cto Caryl group, linear or branched Cto Cfluorinated alkyl group, electron withdrawing group, and Cto Caryl group; optionally wherein Rand Rare linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

Methods For Depositing Films With Organoaminodisilane Precursors

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US Patent:
20180294152, Oct 11, 2018
Filed:
May 10, 2018
Appl. No.:
15/976028
Inventors:
- Allentown PA, US
Xinjian Lei - Vista PA, US
Daniel P. Spence - Carlsbad CA, US
Haripin Chandra - San Marcos CA, US
Bing Han - San Marcos CA, US
Mark Leonard O'Neill - Queen Creek AZ, US
Steven Gerard Mayorga - Oceanside CA, US
Anupama Mallikarjunan - San Marcos CA, US
Assignee:
Versum Materials US, LLC - Allentown PA
International Classification:
H01L 21/02
C23C 16/455
C23C 16/34
C09D 7/20
C07F 7/10
C01B 33/12
C01B 33/021
C09D 1/00
Abstract:
Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I:wherein Ris selected from linear or branched Cto Calkyl group, linear or branched Cto Calkenyl group, linear or branched Cto Calkynyl group, Cto Cdialkylamino group, electron withdrawing group, and Cto Caryl group; Ris selected from hydrogen, linear or branched Cto Calkyl group, linear or branched Cto Calkenyl group, linear or branched Cto Calkynyl group, Cto Cdialkylamino group, Cto Caryl group, linear or branched Cto Cfluorinated alkyl group, electron withdrawing group, and Cto Caryl group; optionally wherein Rand Rare linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

Methods For Depositing A Conformal Metal Or Metalloid Silicon Nitride Film

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US Patent:
20180274097, Sep 27, 2018
Filed:
Oct 6, 2016
Appl. No.:
15/764751
Inventors:
- Tempe AZ, US
- Austin TX, US
Anupama MALLIKARJUNAN - Carlsbad CA, US
Aaron Michael DANGERFIELD - Plano TX, US
Luis Fabián PEÑA - Richardson TX, US
Yves Jean CHABAL - Richardson TX, US
International Classification:
C23C 16/455
C23C 16/34
Abstract:
Described herein are methods for forming a conformal Group 4, 5, 6, 13 metal or metalloid doped silicon nitride film. In one aspect, there is provided a method of forming an aluminum silicon nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one aluminum precursor which reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing into the reactor an organoaminosilane precursors to react on at least a portion of the surface of the substrate to provide a chemisorbed layer; introducing a nitrogen source and an inert gas into the reactor to react with at least a portion of the chemisorbed layer; and optionally purge the reactor with an inert gas; and wherein the steps are repeated until a desired thickness of the aluminum nitride film is obtained.

Silicon-Based Films And Methods Of Forming The Same

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US Patent:
20180119276, May 3, 2018
Filed:
Dec 20, 2017
Appl. No.:
15/848270
Inventors:
- Tempe AZ, US
Anupama Mallikarjunan - San Marcos CA, US
Matthew R. MacDonald - Laguna Niguel CA, US
Manchao Xiao - San Diego CA, US
Assignee:
VERSUM MATERIALS US, LLC - Tempe AZ
International Classification:
C23C 16/32
C23C 16/40
C23C 16/455
C23C 16/36
Abstract:
Disclosed herein are containing silicon-based films and compositions and methods for forming the same. The silicon-based films contain
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Anupama K Mallikarjunan from Mendham, NJ, age ~49 Get Report