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Andrew J Komrowski

from Fremont, CA
Age ~51
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Also known as:
Andrew Joseph Komrowski, Andrew Te Komrowski, Andrew Komorowski, Andrew I
Phone and address:
4364 Dali St, Fremont, CA 94536
(510) 828-0612
Connected to:
Elaine M Komrs, 71Aaron Komsri, 40Kurt M Komsthoeft, 60Krystyna Komuniecki, 72Satoshi Komura, 50Mark A Komuro, 72Christopher S Komuves, 55Kerri A Komuves, 55Daniela Kon, 44Douglas E Kon, 59

Andrew Komrowski Phones & Addresses

  • 4364 Dali St, Fremont, CA 94536 (510) 828-0612
  • 37050 Meadowbrook Cmn, Fremont, CA 94536
  • 25800 Industrial Blvd, Hayward, CA 94545
  • La Jolla, CA
  • 8098 Regents Rd, San Diego, CA 92122 (858) 587-1560
  • Memphis, NY
  • Hanover, NH
  • Alameda, CA

Work

Company: Maxim integrated products Nov 2011 Address: Sunnyvale, CA Position: Product engineer

Education

Degree: Ph.D. School / High School: University of California, San Diego 1996 to 2001 Specialities: Physical Chemistry

Skills

Reliability Engineering • Integration • Yield Analysis • Process Improvement • Yield • Analysis • Cross Functional Team Leadership • Failure Analysis • Silicon • Engineering Management • Manufacturing • Management • R&D • Semiconductor Industry • Thin Films • Process Integration • Program Management • Semiconductor Failure Analysis • Semiconductors • Data Analysis • Design of Experiments • Jmp • Troubleshooting • Spc • Research and Development

Industries

Semiconductors

Resumes

Resumes

Andrew Komrowski Photo 1

Customer Engineer Senior Manager

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Location:
4364 Dali St, Fremont, CA 94536
Industry:
Semiconductors
Work:
Maxim Integrated Products - Sunnyvale, CA since Nov 2011
Product Engineer
Solyndra - Fremont, CA Jan 2010 - Aug 2011
Reliability Engineer
OptiSolar Sep 2008 - Mar 2009
Module Integration Engineer
Numonyx 2008 - 2008
Senior FA Engineer
Intel Corporation Sep 2005 - Apr 2008
FA Engineer
Education:
University of California, San Diego 1996 - 2001
Ph.D., Physical Chemistry Dartmouth College 1992 - 1996
BA, Chemistry, Education
Skills:
Reliability Engineering
Integration
Yield Analysis
Process Improvement
Yield
Analysis
Cross Functional Team Leadership
Failure Analysis
Silicon
Engineering Management
Manufacturing
Management
R&D
Semiconductor Industry
Thin Films
Process Integration
Program Management
Semiconductor Failure Analysis
Semiconductors
Data Analysis
Design of Experiments
Jmp
Troubleshooting
Spc
Research and Development

Publications

Us Patents

Double-Sided Heterojunction Solar Cell Based On Thin Epitaxial Silicon

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US Patent:
20130157404, Jun 20, 2013
Filed:
Feb 14, 2013
Appl. No.:
13/767803
Inventors:
Chentao Yu - Sunnyvale CA, US
Zheng Xu - Pleasanton CA, US
Andrew Komrowski - Fremont CA, US
Assignee:
SILEVO, INC. - Fremont CA
International Classification:
H01L 31/18
US Classification:
438 94
Abstract:
One embodiment of the present invention provides a double-sided heterojunction solar cell. The solar cell includes a lightly doped epitaxial crystalline Si (c-Si) base layer, a front-side passivation layer situated on the front side of the lightly doped epitaxial c-Si base layer, a back-side passivation layer situated on the back side of the lightly doped epitaxial c-Si base layer, a front-side emitter situated on the surface of the front-side passivation layer, a back surface field (BSF) layer situated on the surface of the back-side passivation layer, a front-side electrode, and a back-side electrode.

Double-Sided Heterojunction Solar Cell Based On Thin Epitaxial Silicon

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US Patent:
20110068367, Mar 24, 2011
Filed:
Sep 13, 2010
Appl. No.:
12/881010
Inventors:
Jiunn Benjamin Heng - San Jose CA, US
Chentao Yu - Sunnyvale CA, US
Zheng Xu - Pleasanton CA, US
Andrew Komrowski - Fremont CA, US
Assignee:
SIERRA SOLAR POWER, INC. - Fremont CA
International Classification:
H01L 31/0264
H01L 21/20
US Classification:
257184, 438 94, 257E31004, 257E2109
Abstract:
One embodiment of the present invention provides a double-sided heterojunction solar cell. The solar cell includes a lightly doped epitaxial crystalline Si (c-Si) base layer, a front-side passivation layer situated on the front side of the lightly doped epitaxial c-Si base layer, a back-side passivation layer situated on the back side of the lightly doped epitaxial c-Si base layer, a front-side emitter situated on the surface of the front-side passivation layer, a back surface field (BSF) layer situated on the surface of the back-side passivation layer, a front-side electrode, and a back-side electrode.
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Andrew J Komrowski from Fremont, CA, age ~51 Get Report