Allen L Evans

6403151, Jun 11, 2002

Apr 18, 2000

09/552164

Bradley Marc Davis - Austin TX
Craig William Christian - Buda TX
Allen Lewis Evans - Austin TX

Advanced Micro Devices, Inc. - Austin TX

B05D 506

427162, 427 8, 42725529, 42725537, 427579, 2041921, 438786, 438787

A method is used by a semiconductor processing tool. The method comprises forming a first layer above a substrate layer, and forming an inorganic bottom antireflective coating layer above the first layer by introducing at least two gases at a preselected ratio into the semiconductor processing tools. A signal indicating that the semiconductor processing tool has been serviced is received, and the ratio of the gases is varied in response to receiving the signal to control optical parameters of the bottom antireflective coating layer to enhance subsequent photolithographic processes.

6469518, Oct 22, 2002

Jan 7, 2000

09/479180

Bradley M. Davis - Austin TX
Allen L. Evans - Austin TX
Craig W. Christian - Buda TX

Advanced Micro Devices, Inc. - Austin TX

G01R 2700

324600, 700 31, 700 97, 700109, 700121

A processing line includes a processing tool, a measurement tool, and an automatic process controller. The processing tool is adapted to process articles. The measurement tool is adapted to measure a characteristic of selected articles at a measurement frequency. The automatic process controller is adapted to change the measurement frequency based on a usage characteristic of the processing tool. A method for monitoring a processing tool includes processing a plurality of articles in the processing tool; measuring a characteristic of selected articles at a measurement frequency; and changing the measurement frequency based on a usage characteristic of the processing tool.

6512991, Jan 28, 2003

Jul 12, 2000

09/614312

Bradley M. Davis - Austin TX
Allen L. Evans - Austin TX
Craig W. Christian - Buda TX

Advanced Micro Devices, Inc. - Austin TX

G01K 120

702136, 702130, 702 88, 702 99, 702106

A method for reducing deposition thickness variation in a processing tool comprises storing a post-clean performance model of the processing tool; receiving at least one of a showerhead age and a tool idle time associated with the processing tool as an input parameter; determining temperature control parameters based on the input parameter and the post-clean performance model; and modifying an operating recipe of the processing tool based on the temperature control parameters. A processing system includes a processing tool and an automatic process controller. The processing tool is adapted to process wafers in accordance with an operating recipe. The automatic process controller is adapted to store a post-clean performance model of the processing tool, receive at least one of a showerhead age and a tool idle time associated with the processing tool as an input parameter, determine temperature control parameters based on the input parameter and the post-clean performance model, and modify the operating recipe of the processing tool based on the temperature control parameters.

6514865, Feb 4, 2003

Jan 11, 2002

10/044532

Allen L. Evans - Dripping Springs TX

Advanced Micro Devices, Inc. - Austin TX

H01L 21302

438710, 438 14, 438 5

A method is provided that comprises forming a first dielectric layer on a workpiece, measuring a thickness of the first dielectric layer, and forming a second dielectric layer above the first dielectric layer, the second dielectric layer being formed to a thickness that is determined based upon the measured thickness of the first dielectric layer.

6558963, May 6, 2003

Jul 25, 2000

09/625711

Allen Lewis Evans - Austin TX
H. Jim Fulford - Austin TX

Advanced Micro Devices, Inc. - Austin TX

H01L 2166

438 14, 438680, 438648

In general, the present invention is directed to a method of forming titanium nitride layers. In one illustrative embodiment, the method comprises forming a layer of titanium nitride by a chemical vapor deposition process, sensing a thickness of the layer of titanium nitride, and providing the sensed thickness of the layer of titanium nitride to a controller. The method further comprises determining at least one parameter of a plasma process to be performed on the layer of titanium nitride based upon the sensed thickness of the layer of titanium nitride and performing the plasma process comprised of the determined at least one parameter on the layer of titanium nitride.

6649541, Nov 18, 2003

Aug 1, 2001

09/920490

Allen Lewis Evans - Dripping Springs TX
David E. Brown - Austin TX
Michael J. Satterfield - Round Rock TX
Arturo N. Morosoff - Austin TX

Advanced Micro Devices, Inc. - Austin TX

H01L 21469

438791, 438761, 438758, 438787, 438681

The method disclosed herein provides a semiconducting substrate, positioning the substrate in a high density plasma process chamber, and forming a layer of silicon-rich silicon dioxide above the substrate using a high density plasma process with an oxygen/silane flowrate ratio that is less than or equal to 0. 625. In another embodiment, the method provides a semiconducting substrate having a partially formed integrated circuit device formed thereabove, the integrated circuit device having a plurality of conductive interconnections, e. g. , conductive lines or conductive plugs, formed thereon, and positioning the substrate in a high density plasma process chamber. The method further includes forming a first layer of silicon dioxide between the plurality of conductive interconnections using a high density plasma process with an oxygen/silane flowrate ratio less than 1. 0, and forming a layer of insulating material above the first layer between the conductive interconnections. In another aspect of the present invention, an integrated circuit device has of a plurality of conductive interconnections, e. g.

6684122, Jan 27, 2004

Jan 3, 2000

09/476892

Craig W. Christian - Buda TX
Bradley M. Davis - Austin TX
Allen L. Evans - Austin TX

Advanced Micro Devices, Inc. - Austin TX

G06F 1900

700121, 700110, 700 28

The invention, in its various aspects and embodiments, is a method and apparatus for controlling the operation of a multi-chamber process tool in a semiconductor fabrication process. The method comprises setting a plurality of operation parameters for the conduct of a predetermined operation in each of a plurality of process chambers in a multi-chamber process tool; performing the predetermined operation in each of the process chambers; examining a physical characteristic of a processed wafer from each of the process chambers; determining from the examined physical characteristics whether the operating conditions in each of the process chambers match; and resetting at least one operating parameter so that the operating conditions in each of the process chambers will match. The apparatus comprises a processing tool, a review station, and a tool controller. The processing tool includes a plurality of process chambers and an operation controller.

8171627, May 8, 2012

Dec 21, 2007

11/962714

Bryon K. Hance - Austin TX, US
Brian D. White - Kyle TX, US
William Brennan - Austin TX, US
Joseph W. Wiseman - Austin TX, US
Allen Evans - Dripping Springs TX, US

Spansion LLC - Sunnyvale CA

H05K 3/02

29847, 29825, 29846, 438634, 438637

A process of forming an electronic device including forming a first ultraviolet (“UV”) blocking layer over a conductive feature, wherein the first UV blocking layer lies within 90 nm of the conductive structure; forming a first insulating layer over the first UV blocking layer; and patterning the first insulating layer and the first UV blocking layer to form a first opening extending to the conductive feature, wherein during the process, the first UV blocking layer is exposed to UV radiation.