US Patent:
20080023776, Jan 31, 2008
Inventors:
Allan Laser - San Jose CA, US
International Classification:
H01L 29/76
H01L 21/336
US Classification:
257408, 438306, 257E29266
Abstract:
A metal oxide semiconductor device having a substrate layer of a semiconductor material and a gate, a source and, a drain formed over the substrate layer is provided. The substrate is doped with a deep n-type lightly doped drain implant that simmultaneously lowers the threshold voltage and increases the drain junction breakdown voltage of the device. A method of fabricating a metal oxide semiconductor device is also divided.