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Alfredo Granados

from Eldorado, OK
Age ~72
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Also known as:
Alfredo Granadas
Phone and address:
610 4Th St, Eldorado, OK 73537
(580) 633-2258
Related to:
Julie G Granados, 56
Connected to:
Aaron R Granadoz, 41Abril S Granados, 48Agustin Granados, 44Alan C Granados, 42Albert M Granado, 73Alberto Granados, 41Alfonso S Granados, 78Alma J Granados, 46Alvaro Granados, 70Ana Granadoz, 45

Alfredo Granados Phones & Addresses

  • 610 4Th St, Eldorado, OK 73537 (580) 633-2258
  • Wellington, TX
  • Ryan, OK
  • Millbrae, CA
  • San Bruno, CA
  • South San Francisco, CA

Publications

Us Patents

Methods And Apparatus For Gas Delivery Into Plasma Processing Chambers

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US Patent:
20120152900, Jun 21, 2012
Filed:
Nov 29, 2011
Appl. No.:
13/305986
Inventors:
ROBERT P. CHEBI - San Carlos CA, US
STANLEY DETMAR - Mountain View CA, US
ALAN CHESHIRE - Glasgow, GB
GABRIEL ROUPILLARD - Stockholm, SE
ALFREDO GRANADOS - San Antonio TX, US
Assignee:
APPLIED MATERIALS, INC. - Santa Clara CA
International Classification:
C23F 1/00
C23F 1/08
H05H 1/24
US Classification:
216 67, 31511121, 15634533
Abstract:
Methods and apparatus for gas delivery into plasma processing chambers are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber having a processing volume, a substrate support disposed in the processing volume, an inductively coupled plasma source to generate an electric field within the processing volume that includes one or more regions of local maxima in the magnitude of the electric field, and one or more gas injectors to selectively direct a predominant portion of a process gas flowed through the one or more gas injectors into the one or more regions of local maxima.

Methods For Etching A Substrate

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US Patent:
20120152895, Jun 21, 2012
Filed:
Nov 29, 2011
Appl. No.:
13/305992
Inventors:
ROBERT P. CHEBI - San Carlos CA, US
ALAN CHESHIRE - Scotland, GB
GABRIEL ROUPILLARD - Stockholm, SE
ALFREDO GRANADOS - San Antonio TX, US
Assignee:
APPLIED MATERIALS, INC. - Santa Clara CA
International Classification:
C23F 1/00
US Classification:
216 37
Abstract:
Methods for etching a substrate in a plasma etch reactor may include (a) depositing polymer on surfaces of a feature formed in substrate disposed in the etch reactor using first reactive species formed from a first process gas comprising a polymer forming gas; (b) etching the bottom surface of the feature of the substrate in the etch reactor using a third reactive species formed from a third process gas including an etching gas; and (c) bombarding a bottom surface of the feature with a second reactive species formed from a second process gas comprising one or more of an inert gas, an oxidizing gas, a reducing gas, or the polymer forming gas while at least one of depositing the polymer to remove at least some of the polymer disposed on the bottom surface or etching the bottom surface to at least one of chemically or physically damage the bottom surface.
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Alfredo Granados from Eldorado, OK, age ~72 Get Report