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Alan T Rytlewski

from Freeland, MI
Age ~73
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Also known as:
Alan Terrance Rytlewski, Alan Rylewski
Related to:
Kirstie L Keplar, 59Nickie SchwallSandra D Smith, 49Shannon Smith, 42Alisa Wamble, 57Gary Smith, 36Karen Smith, 65
Connected to:
Dena M Rytlewski, 52Ryan Rytlewski, 32Kenneth J Rytter, 83Kristin M Rytter, 59Melanie L Ryttie, 48Chad C Rytting, 51Douglas K Rytting, 83Jay D Rytting, 57Todd H Rytting, 70Byung W Ryu, 58

Alan Rytlewski Phones & Addresses

  • Freeland, MI
  • Calabash, NC
  • Myrtle Beach, SC
  • North Myrtle Beach, SC
  • Timnath, CO
  • Midland, MI
  • Aiken, SC

Work

Company: Dow corning Position: Retired

Resumes

Resumes

Alan Rytlewski Photo 1

Alan Rytlewski

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Location:
927 Signal Ct, Timnath, CO 80547
Work:
Dow Corning
Retired

Publications

Us Patents

Method Of Determining An Amount Of Impurities That A Contaminating Material Contributes To High Purity Silicon And Furnace For Treating High Purity Silicon

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US Patent:
20120227472, Sep 13, 2012
Filed:
Apr 10, 2012
Appl. No.:
13/443466
Inventors:
Dennis DePasa - Midland MI, US
Jon Host - Midland MI, US
Troy Houthoofd - Saginaw MI, US
Alan Rytlewski - Midland MI, US
International Classification:
G01N 1/44
US Classification:
73 6171
Abstract:
A method of determining an amount of impurities that a contaminating material contributes to high purity silicon comprises the step of partially encasing a sample of high purity silicon in the contaminating material. The sample encased in the contaminating material is heated within a furnace. A change in impurity content of the high purity silicon is determined after the step of heating, compared to an impurity content of the high purity silicon prior to the step of heating.

Method Of Determining An Amount Of Impurities That A Contaminating Material Contributes To High Purity Silicon And Furnace For Treating High Purity Silicon

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US Patent:
20110177626, Jul 21, 2011
Filed:
Sep 24, 2009
Appl. No.:
13/121788
Inventors:
Dennis Depesa - Midland MI, US
Jon Host - Midland MI, US
Troy Houthoofd - Saginaw MI, US
Alan Rytlewski - Midland MI, US
International Classification:
H01L 21/66
F24C 1/00
US Classification:
438 14, 126 58, 432 1
Abstract:
A method of determining an amount of impurities that a contaminating material contributes to high purity silicon comprises the step of partially encasing a sample of high purity silicon in the contaminating material. The sample encased in the contaminating material is heated within a furnace. A change in impurity content of the high purity silicon is determined after the step of heating, compared to an impurity content of the high purity silicon prior to the step of heating. A furnace for heat treating high purity silicon comprises a housing that defines a heating chamber. The housing is at least partially formed from low contaminant material that contributes less than 400 parts per trillion of impurities to the high purity silicon during heating at annealing temperatures for a sufficient period time to anneal the high purity silicon, and the furnace contributes an average of less than 400 parts per trillion of impurities to the high purity silicon under the same heating conditions.
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Alan T Rytlewski from Freeland, MI, age ~73 Get Report