Zhi Gan Liu

7644512, Jan 12, 2010

Jan 18, 2007

11/624445

Zhi (Lewis) Liu - Paoli PA, US
Ismail Kashkoush - Orefield PA, US
Hanjoo Lee - Sungname, KR

F26B 11/02

34413, 34449, 34499, 34 77, 34 78, 34 80, 118 65, 118715

A method of drying a surface of a substrate is provided. The method includes supporting and rotating a substrate; applying a liquid to the substrate surface at or near a rotational center point via a liquid dispenser (so that a film of the liquid is formed on the surface); applying a drying fluid to the substrate surface at a predetermined distance from the rotational center point via one or more drying fluid dispensers; and manipulating the drying fluid dispenser(s) so that the location at which the drying fluid is applied to the substrate is moved in a direction toward the rotational center point, while at the same time manipulating the liquid dispenser so that the location at which the liquid is applied to the substrate is moved in a direction outward from the rotational center point. The liquid dispenser and drying fluid dispenser(s) noted above can be located on and/or within an assembly. The assembly can include a first dispenser, a second dispenser, and a third dispenser.

8056253, Nov 15, 2011

Jan 12, 2010

12/685935

Zhi (Lewis) Liu - Paoli PA, US
Ismail Kashkoush - Orefield PA, US
Hanjoo Lee - Sungname, KR

F26B 19/00

34 78, 34 80, 34 58, 34218, 392380, 392384, 705 14, 4281951, 428343, 118666, 118 52, 526243, 526319

A system of drying a surface of a substrate is provided. The system includes a rotary support for supporting a substrate; and an assembly comprising a first dispenser, a second dispenser, and a third dispenser, the assembly positioned above the surface of the substrate, the second and third dispensers positioned on the assembly adjacent to and in contact with one another and spaced from the first dispenser, the second dispenser having an opening that is larger than an opening of the third dispenser, and the second dispenser being located between the first and third dispensers; and means for translating the assembly generally parallel to the surface of the substrate.

8276291, Oct 2, 2012

Nov 15, 2011

13/296760

Zhi (Lewis) Liu - Paoli PA, US
Ismail Kashkoush - Orefield PA, US
Hanjoo Lee - Sungname, KR

F26B 11/02

34381, 34413, 34497, 34 78, 34 80, 118 52, 118 65, 392380, 428343

A method of drying a surface of a substrate is provided. The method includes supporting a substrate; rotating the substrate about a rotational center point; applying a liquid to the substrate via a liquid dispenser; applying a drying fluid to the substrate via a drying fluid dispenser; moving the drying fluid dispenser and the liquid dispenser in a direction toward an edge region of the substrate, the drying fluid being applied closer to the rotational center point than the fluid; upon the liquid being applied to the edge region of the substrate, discontinuing application of the liquid while continuing the manipulation of the drying fluid dispenser; and upon the drying fluid being applied to the edge region of the substrate, continuing to apply the drying fluid for a predetermined period of time.

20060011214, Jan 19, 2006

Jul 7, 2005

11/176406

Zhi Liu - Paoli PA, US
Ismail Kashkoush - Orefield PA, US
Alan Walter - Chester Springs PA, US
Richard Novak - Plymouth MN, US

C03C 23/00
B08B 3/00

134002000, 134026000, 134094100

A system and method for cleaning semiconductor wafers wherein the use of SCI and SC2 is eliminated and replaced by the use DIOand dilute chemistries. In one aspect, the invention is a method comprising: (a) supporting in a process chamber at least one semiconductor wafer having a silicon foundation with a silicon-dioxide layer in at least one pre-gate structure; (b) applying an aqueous solution of hydrofluoric acid in deionized (DI) water to the semiconductor wafer to remove the silicon dioxide layer and form a gate; (c) applying ozonated deionized water (DIO) to the semiconductor wafer to remove particles from the gate and passivate the silicon foundation; (d) applying a dilute solution of hydrofluoric acid and hydrochloric acid in DI water to the semiconductor wafer to remove any silicon dioxide layer that may have formed in the gate from the application of the DIOand to remove any metal contaminants; and (e) applying DIOto the semiconductor wafer to grow a new layer of silicon dioxide on the silicon foundation in the gate.

20060021634, Feb 2, 2006

Jul 8, 2005

11/177147

Zhi (Lewis) Liu - Paoli PA, US
Richard Novak - Plymouth MN, US
Alan Walter - Chester Springs PA, US
Nick Yialamas - Allentown PA, US

B08B 6/00

134001300

A method and system for creating an ozonated process solution, such as ozonated deionized water, having high ozone concentration. The system comprises, a static mixer coupled to a recirculation loop of an auxiliary tank. The system and method are designed so that during the initial feed of process liquid and ozone gas to the system, the process liquid and ozone gas pass through the static mixer prior to ever reaching the auxiliary. The static mixer mixes the ozone gas into the process liquid to form the ozonated process solution. Thus, the auxiliary tank is initially filled with an ozonated process solution. The ozonated process solution can be recirculated from the auxiliary tank and back through the static mixer while additional ozone gas is dissolved therein. This recirculation can be performed until a desired concentration of ozone is detected in the ozonated process solution.

20080016713, Jan 24, 2008

Jul 12, 2007

11/777258

Zhi Liu - Paoli PA, US

F26B 5/08
B08B 3/00

034312000, 134001300, 134033000, 034307000

A method and system for preventing the deposit of residues on a substrate. Aspects of the system are modified in order to prevent the deposit of residue of substrates. In particular, gaps located within the system between the splash guard and the process chamber wall are closed, minimized and/or given a non-linear shape so as to prevent the deposit of materials back onto the substrate. In one aspect, the invention is a system for processing a substrate comprising: a rotary support for supporting a substrate in a substantially horizontal orientation, the rotary support adapted to rotate about an axis of rotation; a wall circumferentially surrounding the rotary support about the axis of rotation, the wall extending above and below a top surface of a substrate positioned on the rotary support; a splash guard circumferentially surrounding the rotary support about the axis of rotation, the splash guard positioned between the rotary support and the wall so that an annular gap exists between an outer surface of the splash guard and an inner surface of the wall structure; a structure extending upward from the outer surface of the splash guard, the structure adapted to prohibit droplets carried upward through the gap by air flow from depositing on a substrate on the rotary support.

20130167393, Jul 4, 2013

Oct 2, 2012

13/633843

Zhi Lewis Liu - Paoli PA, US
Ismail Kashkoush - Orefield PA, US
Hanjoo Lee - Sungname-city, KR

F26B 19/00

34 60

A system for drying a surface of a substrate is provided. The system for drying a surface of a substrate comprising: a rotary support; a first dispenser fluidly coupled to a source of liquid, the first dispenser positioned above the surface of the substrate so as to be capable of applying a film of the liquid to the surface of the substrate; a second dispenser fluidly coupled to a source of drying fluid with a supply line, the second dispenser positioned above the surface of the substrate so as to be capable of applying the drying fluid to the surface of the substrate; and a proportional valve operably coupled to the supply line between the second dispenser and the source of drying fluid, the proportional valve capable of being incrementally adjusted from a closed position to an open position.