Li Yan from Riverside, CA, age 53

Resumes

Li Yan Los Angeles, CA

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Work:

Shanghai Pu Hai Shipping Co., Ltd

Jun 2012 to Aug 2012
Customer Service Clerk, Department of Domestic Service
2010 Shanghai EXPO

Oct 2010 to Oct 2010
Volunteer

Education:

University of Southern California
Los Angeles, CA
2013 to 2015
Master of Science in Engineering Management
University of Southern California
Los Angeles, CA
2013 to 2015
Graduate Certificate in Optimization and Supply Chain Management
School of Naval Architecture, Ocean & Civil Engineering (NAOCE)
2009 to 2013
Bachelor of Science in Transportation
Antai College of Economics & Management (ACEM)
2009 to 2013
Bachelor of Art in Accounting

Skills:

Inventory Management, ArcGIS, Microsoft Office, Origin, Auto CAD, SAP ERP, TSIS, Microsoft Project, Supply Chain Management, Accounting, JMP, Inventory Management

Li Yan Riverside, CA

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Work:

Algorithm Lab

Sep 2008 to 2000
Research Assistant
Google
Mountain View, CA
Jun 2012 to Sep 2012
Software Engr Intern
Page Bites (known as imo.im)
Palo Alto, CA
Jul 2010 to Sep 2010
Software Engr Intern
Google
Mountain View, CA
Jun 2009 to Sep 2009
Software Engr in Test Intern
Morgan Stanley Information Technology Ltd

Sep 2007 to Aug 2008
Software Engineer
Microsoft

Sep 2006 to Aug 2007
Software Engineer

Education:

University of California
Riverside, CA
2008
PhD in Computer Science
The University of Hong Kong
Hong Kong, Hong Kong Island
2004 to 2006
Master of Philosophy in Computer Science
University of Washington
Seattle, WA
2001 to 2004
Master of Science in Materials Science and Engineering
Tsinghua University
1996 to 2000
Bachelor of Science in Chemistry

Skills:

algorithms, C/C++, Java, Perl, Python, Ocaml, Matlab, Shell scripts: awk, sed, bash, Debugging tools: gdb Web development: html, php, javascript

Business Records

Name / Title

Company / Classification

Phones & Addresses

Li Yan
President

CCTV TOMORROW INC

1641 W Main St STE 222, Alhambra, CA 91801
820 S Garfield Ave, Alhambra, CA 91801
21660 Copley Dr, Pomona, CA 91765

Li Yan
Manager

H & Y Investment, LLC

3077 S Decatur Blvd, Las Vegas, NV 89102
3278 Moonflower Dr, Las Vegas, NV 89146

Li Yan

Jhz U.S., LLC
Import/Export of Merchandise

17700 Castleton St, Whittier, CA 91748

Li Yan

Inland Hospitality Management LLC
Import Export

19138 E Walnut Dr N, Whittier, CA 91748

Li Yan

U-TALK FOREIGN LANGUAGE CENTER, LLC

Li M. Yan
President

First Home Furniture Inc
Ret Furniture

15513 Hbr Way, San Leandro, CA 94579

Li Yan
President

ECROX TRADING INC

15136 Vly Blvd, La Puente, CA 91746
15136 Vly Blvd, Whittier, CA 91746

Li Yan
President

INTERNATIONAL CHINESE NETWORK, INC

9550 Flair Dr SUITE 102, El Monte, CA 91731

Publications

Us Patents

Method And System For A Soft-Output Nordstrom-Robinson Decoder

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US Patent:

8407568, Mar 26, 2013

Filed:

Aug 31, 2009

Appl. No.:

12/551102

Inventors:

Zvi Bernstein - San Jose CA, US
Mike Grimwood - Palo Alto CA, US
Li Yan - Newtown PA, US

Assignee:

Broadcom Corporation - Irvine CA

International Classification:

H03M 13/45

US Classification:

714780

Abstract:

Aspects of a method and system for a method and system for a soft output Nordstrom-Robinson (NR) decoder may include one or more processors and/or circuits that are operable to more efficiently compute cross correlation values for a received soft output word based on a NR codebook in comparison to brute force computation approaches. Log likelihood ratios may be computed for each information bit corresponding to the received soft output word by determining corresponding maximum cross correlation values.

Light Emitting Devices Having Light Coupling Layers

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US Patent:

20130082280, Apr 4, 2013

Filed:

Sep 29, 2011

Appl. No.:

13/249184

Inventors:

Chao-Kun Lin - San Jose CA, US
Li Yan - Pleasanton CA, US
Chih-Wei Chuang - Albany CA, US

International Classification:

H01L 33/02
H01L 33/22

US Classification:

257 77, 257 76, 438 29, 257 98, 257E33023, 257E3306

Abstract:

A light emitting device comprises a first layer of an n-type semiconductor material, a second layer of a p-type semiconductor material, and an active layer between the first layer and the second layer. A light coupling layer is disposed adjacent to one of the first layer and the second layer. In some cases, the light coupling layer is formed by roughening a buffer layer of the light emitting device. The light emitting device includes an electrode in electrical communication with one of the first layer and the second layer through a portion of the light coupling layer.

Light Emission System With Microled Device Isolation

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US Patent:

20220254759, Aug 11, 2022

Filed:

Jan 14, 2022

Appl. No.:

17/576300

Inventors:

- Fremont CA, US
Li Yan - Dublin CA, US
Michael Joseph Cich - San Jose CA, US

International Classification:

H01L 25/075
H01L 33/32
H01L 33/50
H01L 33/00
H01L 33/14

Abstract:

A light emission system includes an array of micro light-emitting diodes (microLED)s. The array of microLEDs includes a semiconductor substrate, a prep layer formed on at least a portion of the semiconductor substrate, and an active region formed on the prep layer. The array of microLEDs also include a plurality of thick sub-structures forming an array on the active region, and a plurality of thin sub-structures formed on the active region, each one of the thin sub-structures being located between each adjacent pair of thick substructures. Each one of the thick sub-structures defines a shape and size of a corresponding one of the microLEDs. Each one of the thin sub-structures is configured for preventing mobility of free electron carriers therethrough to electrically isolate each one of the thick sub-structures from every other one of the thick sub-structures. Further, the plurality of microLEDs share the active region.

Light Emitting Diodes With Current Injection Enhancement From The Periphery

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US Patent:

20160276541, Sep 22, 2016

Filed:

Mar 16, 2015

Appl. No.:

14/658942

Inventors:

- Tokyo, JP
Li Yan - Dublin CA, US

International Classification:

H01L 33/38
H01L 33/40

Abstract:

A light emitting diode (LED) assembly with current injection enhancement from the periphery of the LED is disclosed. In one embodiment, the LED assembly includes an LED comprising a light emitting layer disposed between a first layer having a first conductivity type and a second layer having a second conductivity type. The LED assembly further includes a first electrode and a second electrode. The first electrode is formed on a surface of the first layer opposite the light emitting layer, and electrically coupled to the first layer. The first electrode substantially covers the surface of the first layer. The second electrode is formed at along a portion of the periphery of the LED, outside of a perimeter of the first electrode. The second electrode extends through the first layer and the light emitting layer to the second layer, and is electrically coupled to the second layer. In one embodiment, the LED assembly includes one or more second electrodes along the periphery of the LED. In one embodiment, the one or more second electrodes partially surround the first electrode. In another embodiment, the one or more second electrodes completely surround the first electrode. In yet a further embodiment, the one or more second electrodes extend inwards of the sidewall of the LED.