Yu U Xia

8513445, Aug 20, 2013

Sep 28, 2011

13/247559

Antonio Facchetti - Chicago IL, US
Jordan Quinn - Skokie IL, US
Yu Xia - Skokie IL, US

Polyera Corporation - Skokie IL

C07C 50/36
H01L 29/08

552276, 257 40, 552279

Disclosed are new semiconductor materials prepared from polycyclic aromatic compounds. Such compounds can exhibit high carrier mobility and/or good current modulation characteristics. In addition, the compounds of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.

20130048949, Feb 28, 2013

May 21, 2012

13/477030

Yu Xia - Skokie IL, US
He Yan - Kowloon, HK
Antonio Facchetti - Chicago IL, US

H01L 29/78
H01L 21/20
B82Y 99/00
B82Y 40/00

257 29, 438479, 257E29255, 257E2109, 977734, 977750, 977752

Disclosed are thin film transistor devices incorporating a thin film semiconductor derived from carbonaceous nanomaterials and a dielectric layer composed of an organic-inorganic hybrid self-assembled multilayer.

20130196469, Aug 1, 2013

Mar 14, 2013

13/804037

Northwestern University - Evanston IL, US
Mercouri G. Kanatzidis - Wilmette IL, US
William Christopher Sheets - Chicago IL, US
He Yan - Hong Kong, CN
Yu Xia - Skokie IL, US

Polyera Corporation - Skokie IL
Northwestern University - Evanston IL

H01L 29/66
H01L 21/02
H01L 21/441

438104, 438608, 438778

Disclosed are new methods of fabricating metal oxide thin films and nanomaterial-derived metal composite thin films via solution processes at low temperatures (

20130200345, Aug 8, 2013

Mar 12, 2013

13/796017

Huei Shuan Phoebe Tan - Zhubei City, TW
Yu Xia - Skokie IL, US
Zhihua Chen - Skokie IL, US
Yan Zheng - Skokie IL, US
Antonio Facchetti - Chicago IL, US

H01L 51/05

257 40

Disclosed are photocurable polymers that can be used as active and/or passive organic materials in various electronic, optical, and optoelectronic devices. In some embodiments, the device can include a dielectric layer prepared from such photocurable polymers. In some embodiments, the device can include a passivation layer prepared from the polymers described herein.

20130217180, Aug 22, 2013

Mar 15, 2013

13/844771

NORTHWESTERN UNIVERSITY - , US
Mercouri G. Kanatzidis - Wilmette IL, US
William Christopher Sheets - Chicago IL, US
He Yan - Hong Kong, CN
Yu Xia - Skokie IL, US

POLYERA CORPORATION - Skokie IL
NORTHWESTERN UNIVERSITY - Evanston IL

H01L 21/02
H01L 29/66
H01L 21/285

438104, 438778, 438608

Disclosed are new methods of fabricating metal oxide thin films and nanomaterial-derived metal composite thin films via solution processes at low temperatures (

20140042369, Feb 13, 2014

Mar 15, 2013

13/844266

Damien Boudinet - Chicago IL, US
Yan Zheng - Skokie IL, US
Zhikai Wang - Skokie IL, US
Yu Xia - Skokie IL, US
Theresa L. Starck - Chicago IL, US
Antonio Facchetti - Chicago IL, US

H01L 51/00

252500

Disclosed are formulations including an organic semiconducting compound in a liquid medium, where the liquid medium includes (1) a compound in liquid state that has electronic properties complementary to the electronic structure of the organic semiconducting compound and optionally (2) a solvent or solvent mixture for solubilizing the organic semiconducting compound. The present formulations can be used as inks in the fabrication of organic semiconductor devices.

20230022693, Jan 26, 2023

Jul 5, 2022

17/857596

- Evanston IL, US
- Skokie IL, US
Wei Huang - Deyang, CN
Jianhua Chen - Shenzhen, CN
Yu Xia - Northbrook IL, US

H01L 51/00
C08L 65/00
C09D 5/24
C09D 165/00
H01G 9/22
H01L 27/28
H01G 9/26

Photocurable compositions that combine redox-active semiconducting organic polymers with photocurable organic molecules are provided. Upon exposure to radiation, the photocurable compositions form ion-permeable, electrically conductive crosslinked organic films that can be used as conducting channels in n-channel or p-channel organic electrochemical transistors, including vertical organic electrochemical transistors (vOECTs). The vOECTs can be incorporated in complementary electronic circuits.

20210257568, Aug 19, 2021

Nov 19, 2019

17/275547

- Skokie IL, US
Yu Xia - Skokie IL, US
Zhihua Chen - Skokie IL, US
Timothy Chiu - Skokieil IL, US
Shaofeng Lu - Skokie IL, US

H01L 51/05
H01L 51/00

This invention relates to a thin-film transistor including, a dielectric layer having a first side and an opposed second side; a source electrode, a drain electrode separated from the source electrode, and a semiconductor component disposed between and in contact with the source electrode and the drain electrode, the source electrode, the drain electrode and the semiconductor component being disposed adjacent the first side of the dielectric layer; and a gate electrode disposed adjacent the second side of the dielectric layer opposite the semiconductor component; wherein the semiconductor component comprises one or more n-type organic semiconductor materials based on arene-bis(dicarboximide)s, and wherein the thin-film transistor has a channel length, measured as the shortest path from the source electrode to the drain electrode, of no more than 20 μm.