Yu Wang

7632733, Dec 15, 2009

Apr 29, 2006

11/413248

Yu Wang - Fremont CA, US
Tiesheng Li - San Jose CA, US
Hong Chang - Cupertino CA, US

Alpha & Omega Semiconductor, Inc. - Sunnyvale CA

H01L 21/336

438270, 257E2153

This invention discloses a semiconductor wafer for manufacturing electronic circuit thereon. The semiconductor substrate further includes an etch-back indicator that includes trenches of different sizes having polysilicon filled in the trenches and then completely removed from some of the trenches of greater planar trench dimensions and the polysilicon still remaining in a bottom portion in some of the trenches having smaller planar trench dimensions.

7633267, Dec 15, 2009

Jul 5, 2005

11/175555

Keith Douglas Kepler - Belmont CA, US
Yu Wang - Foster City CA, US

Farasis Energy, Inc. - Hayward CA

H01M 10/46

320150

A high throughput combinatorial screening method and apparatus for the evaluation of electrochemical materials using a single voltage source () is disclosed wherein temperature changes arising from the application of an electrical load to a cell array () are used to evaluate the relative electrochemical efficiency of the materials comprising the array. The apparatus may include an array of electrochemical cells () that are connected to each other in parallel or in series, an electronic load () for applying a voltage or current to the electrochemical cells (), and a device (), external to the cells, for monitoring the relative temperature of each cell when the load is applied.

7710371, May 4, 2010

Dec 16, 2004

11/014490

Ping Mei - Palo Alto CA, US
Jurgen Daniel - Mountain View CA, US
James B. Boyce - Los Altos CA, US
Jackson Ho - Palo Alto CA, US
Rachel Lau - San Jose CA, US
Yu Wang - Union City CA, US

Xerox Corporation - Norwalk CT

G09G 3/34
C25B 9/00
F04B 17/00
B41J 2/14
G02F 1/153
H04R 19/00

345 85, 204253, 204255, 204257, 204252, 4174131, 347 49, 359267, 359291, 381176, 381399

Cells can include variable volumes defined between a flexible structure, such as a polymer layer, and a support surface, with the flexible structure and support surface being attached in a first region that surrounds a second region in which they are unattached. Various adhesion structures can attach the flexible structure and the support surface. When unstretched, the flexible structure can lie in a flat position on the support surface. In response to a stretching force away from the support surface, the flexible structure can move out of the flat position, providing the variable volume. Electrodes, such as on the flexible structure, on the support surface, and over the flexible structure, can have charge levels that couple with each other and with the variable volume. A support structure can include a device layer with signal circuitry that provides a signal path between an electrode and external circuitry. One or more ducts can provide fluid communication with each cell's variable volume.

7928507, Apr 19, 2011

Dec 9, 2009

12/653130

Yu Wang - Fremont CA, US
Tiesheng Li - San Jose CA, US
Hong Chang - Cupertino CA, US

Alpha & Omega Semiconductor, Inc. - Sunnyvale CA

H01L 29/66
H01L 29/06

257330, 257622, 257E2153, 257E21585

This invention discloses a semiconductor wafer for manufacturing electronic circuit thereon. The semiconductor substrate further includes an etch-back indicator that includes trenches of different sizes having polysilicon filled in the trenches and then completely removed from some of the trenches of greater planar trench dimensions and the polysilicon still remaining in a bottom portion in some of the trenches having smaller planar trench dimensions.

7989103, Aug 2, 2011

Jul 20, 2006

11/491218

Keith Douglas Kepler - Belmont CA, US
Yu Wang - Foster City CA, US

Farasis Energy, Inc. - Hayward CA

H01M 2/16
H01M 2/18

429142, 429249, 429251, 429252, 429254

A microporous separator film for electrochemical cells and a method of making such films is disclosed. The microporous separator film includes an intimate mixture of an electrically insulating matrix phase and a self-switching voltage activated conductive phase, wherein the voltage activated conductive phase provides a plurality of conductive paths from a first face of the microporous separator film to a second face of the microporous separator film. The method for making the composite microporous separator film includes the steps of forming an intimate mixture of at least an insulating matrix phase and a self-switching voltage activated phase, forming a film from the mixture, and generating pores within the film.

8080330, Dec 20, 2011

May 28, 2011

13/118411

Keith Douglas Kepler - Belmont CA, US
Yu Wang - Foster City CA, US

Farasis Energy, Inc. - Hayward CA

H01M 2/16
H01M 2/18
B29C 44/04
B29C 47/00

429142, 429249, 429254, 264464, 264 451, 264 461

A microporous separator film for electrochemical cells and a method of making such films is disclosed. The microporous separator film includes an intimate mixture of an electrically insulating matrix phase and a self-switching voltage activated conductive phase, wherein the voltage activated conductive phase provides a plurality of conductive paths from a first face of the microporous separator film to a second face of the microporous separator film. The method for making the composite microporous separator film includes the steps of forming an intimate mixture of at least an insulating matrix phase and a self-switching voltage activated phase, forming a film from the mixture, and generating pores within the film.

8193061, Jun 5, 2012

Apr 18, 2011

13/066583

Yu Wang - Fremont CA, US
Tiesheng Li - San Jose CA, US
Hong Chang - Cupertino CA, US

Alpha & Omega Semiconductor Incorporated - Sunnyvale CA

H01L 21/336

438270, 257E2153

This invention discloses a semiconductor wafer for manufacturing electronic circuit thereon. The semiconductor substrate further includes an etch-back indicator that includes trenches of different sizes having polysilicon filled in the trenches and then completely removed from some of the trenches of greater planar trench dimensions and the polysilicon still remaining in a bottom portion in some of the trenches having smaller planar trench dimensions.

8471368, Jun 25, 2013

Mar 27, 2012

13/431551

Yu Wang - Fremont CA, US
Tiesheng Li - San Jose CA, US
Hong Chang - Cupertino CA, US

Alpha and Omega Semiconductor Incorporated - Sunnyvale CA

H01L 29/06

257622, 257623, 257E23179, 257E2153

This invention discloses a semiconductor wafer for manufacturing electronic circuit thereon. The semiconductor substrate further includes an etch-back indicator that includes trenches of different sizes having polysilicon filled in the trenches and then completely removed from some of the trenches of greater planar trench dimensions and the polysilicon still remaining in a bottom portion in some of the trenches having smaller planar trench dimensions.