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Yu H Lu

from Dumont, NJ
Age ~62
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Also known as:
Yu M Lu, Lu Yu
Phone and address:
87 E Quackenbush Ave, Dumont, NJ 07628
(201) 315-8635
Related to:
Jin C Lu, 71Bi Z Lin, 45Cui D Lu, 40Min Lu Yumin, 41Ming Z Lu, 42Lu Z YingHuan Lu Yu, 43
Connected to:
Abigail I Lu, 32Aiping Lu, 54Allen C Lu, 46Anjian Lu, 84Anna G Lu, 67Anne B Lu, 72Arnold W Lu, 49Ava Lu, 36Ay K Lu, 54Barbara T Lu, 74

Yu Lu Phones & Addresses

  • 87 E Quackenbush Ave, Dumont, NJ 07628 (201) 315-8635
  • Stanfordville, NY

Resumes

Resumes

Yu Lu Photo 1

Yu Lu

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Yu Lu Photo 2

Graduate Research Assistant

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Work:

Graduate Research Assistant
Yu Lu Photo 3

Yu Lu

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Yu Lu Photo 4

Yu Lu

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Yu Lu Photo 5

Yu Lu

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Yu Lu Photo 6

Mba Candidate, Class 2011 At Nyu Stern School Of Business At New York University Stern School Of Business

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Location:
Greater New York City Area
Industry:
Investment Banking
Yu Lu Photo 7

Yu Lu

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Location:
United States
Yu Lu Photo 8

Director, Strategic Analysis At Girl Scouts Of The Usa

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Position:
Director, Strategic Analysis at Girl Scouts of the USA, Director, Strategic Analysis at GSUSA
Location:
Greater New York City Area
Industry:
Nonprofit Organization Management
Work:
Girl Scouts of the USA since Apr 2005
Director, Strategic Analysis
GSUSA since 1994
Director, Strategic Analysis
Education:
State University of New York at Stony Brook 1987 - 1994
Skills:
Non-profits
Strategic Planning
MapInfo
Statistics
Event Management
Fundraising
Team Building
Event Planning
Demographic Analysis
Databases
Social Media
SAS
Data Modeling

Business Records

Name / Title
Company / Classification
Phones & Addresses
Yu Fu Lu
President
Great Wall Lu Inc
17940 N Tamiami Trl, Fort Myers, FL 33903
45 Division St, New York, NY 10002
Yu Hong Lu
H2 GALAXY CORP
Nonclassifiable Establishments · Ret Sporting Goods/Bicycles
4134 Frame Pl, Flushing, NY 11355
4327 Bowne St, Flushing, NY 11355
20417 45 Dr, Flushing, NY 11361
(718) 762-2841
Yu Ya Lu
LU WOODSIDE MINI MALL INC
Nonclassifiable Establishments · Nonresidential Building Operator
60-19 Roosevelt Ave, Woodside, NY 11377
6019 Roosevelt Ave, Flushing, NY 11377
Yu F. Lu
Principal
Wai & Cafe Inc
Eating Place
136 Bowery, New York, NY 10013
Yu Feng Lu
FAN SHUN KITCHEN INC
63-59 108 St, Forest Hills, NY 11375
3-59 108 St, Forest Hills, NY 11375
Yu Lu
President
USA CALIFORNIA WOLE INT'L GROUP INC

Publications

Isbn (Books And Publications)

The Classic of Tea

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Author

Yu Lu

ISBN #

0316534501

The Wild Old Man: Poems of Lu Yu

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Author

Yu Lu

ISBN #

0865471509

The Classic of Tea: Origins & Rituals

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Author

Yu Lu

ISBN #

0880014164

Lu Yu Cha Jing: Jie Du Yu Dian Jiao

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Author

Yu Lu

ISBN #

7806465677

Il Canone Del Te

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Author

Yu Lu

ISBN #

8835500982

Us Patents

Write Circuit For A Magnetic Random Access Memory

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US Patent:
6778429, Aug 17, 2004
Filed:
Jun 2, 2003
Appl. No.:
10/452418
Inventors:
Yu Lu - Hopewell Junction NY
William Robert Reohr - Ridgefield CT
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
G11C 1100
US Classification:
365158, 365 97, 365 63
Abstract:
A write circuit for selectively writing one or more magnetic memory cells in an MRAM includes at least one programmable current source being couplable to one or more global word lines in the MRAM, the programmable current source including an input for receiving a first control signal and an output, the programmable current source generating at least a portion of a write current at the output having a magnitude which varies in response to the first control signal. The write circuit further includes a plurality of current sinks, each current sink being couplable to one or more global word lines in the MRAM, each current sink including an input for receiving a second control signal, each current sink returning at least a portion of the write current in response to the second control signal. A controller operatively coupled to the at least one programmable current source and the plurality of current sinks is operative to generate the first and second control signals and to selectively distribute the write current across a plurality of global word lines in the MRAM so that stray magnetic field interaction between selected memory cells and half-selected and/or unselected memory cells in the MRAM is minimized.

Segmented Word Line Architecture For Cross Point Magnetic Random Access Memory

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US Patent:
6816405, Nov 9, 2004
Filed:
Jun 2, 2003
Appl. No.:
10/452177
Inventors:
Yu Lu - Hopewell Junction NY
William Robert Reohr - Ridgefield CT
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
G11C 1114
US Classification:
365171, 365158, 36518904, 36518907, 365190
Abstract:
An MRAM comprises a plurality of magnetic memory cells, a plurality of local word lines, each of the local word lines being operatively coupled to at least one memory cell for assisting in writing a logical state of the at least one memory cell corresponding thereto, a plurality of global word lines, each of the plurality of global word lines being connected to at least one of the plurality of local word lines, the global word lines being substantially isolated from the memory cells, a plurality of write circuits operatively coupled to the global word lines, and a plurality bit lines operatively coupled to the memory cells for selectively writing a logical state of one or more of the memory cells. Each of the write circuits is configurable as a current source and/or a current sink for supplying and/or returning, respectively, at least a portion of a write current for assisting in writing one or more memory cells. The write circuits are configured to selectively distribute the write current across at least a plurality of global word lines so that stray magnetic field interaction between selected memory cells and half-selected and/or unselected memory cells is reduced.

Magnetic Random Access Memory Using Memory Cells With Rotated Magnetic Storage Elements

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US Patent:
6816431, Nov 9, 2004
Filed:
May 28, 2003
Appl. No.:
10/446297
Inventors:
Yu Lu - Hopewell Junction NY
William Robert Reohr - Ridgefield CT
Roy Edwin Scheuerlein - Cupertino CA
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
G11C 1115
US Classification:
36523007, 3652255, 365173, 365171, 365158, 365 51, 365 66
Abstract:
A magnetic random access memory circuit comprises a plurality of magnetic memory cells, each of the memory cells including a magnetic storage element having an easy axis and a hard axis associated therewith, and a plurality of column lines and row lines for selectively accessing one or more of the memory cells, each of the memory cells being proximate to an intersection of one of the column lines and one of the row lines. Each of the magnetic memory cells is arranged such that the easy axis is substantially parallel to a direction of flow of a sense current and the hard axis is substantially parallel to a direction of flow of a write current.

Magnetic Random Access Memory Cell

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US Patent:
6958502, Oct 25, 2005
Filed:
Oct 22, 2003
Appl. No.:
10/691300
Inventors:
Yu Lu - Hopewell Junction NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L029/76
US Classification:
257295, 365158, 365200, 257421
Abstract:
A memory cell for use in a magnetic random access memory (MRAM) circuit includes at least first and second transistors formed in a semiconductor layer. A first insulating layer is formed on at least a portion of the first and second transistors. The memory cell further includes a first magnetic storage element formed on at least a portion of the first insulating layer, at least a second insulating layer formed on at least a portion of the first magnetic storage element, and at least a second magnetic storage element formed on at least a portion of the second insulating layer. The first and second magnetic storage elements are electrically connected to the first and second transistors, respectively.

Magnetic Random Access Memory Using Memory Cells With Rotated Magnetic Storage Elements

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US Patent:
6975555, Dec 13, 2005
Filed:
Oct 29, 2004
Appl. No.:
10/976598
Inventors:
Yu Lu - Hopewell Junction NY, US
William Robert Reohr - Ridgefield CT, US
Roy Edwin Scheuerlein - Cupertino CA, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
G11C011/15
US Classification:
36523007, 3652255, 365158, 365173, 365171, 365 51, 365 66
Abstract:
A magnetic random access memory circuit comprises a plurality of magnetic memory cells, each of the memory cells including a magnetic storage element having an easy axis and a hard axis associated therewith, and a plurality of column lines and row lines for selectively accessing one or more of the memory cells, each of the memory cells being proximate to an intersection of one of the column lines and one of the row lines. Each of the magnetic memory cells is arranged such that the easy axis is substantially parallel to a direction of flow of a sense current and the hard axis is substantially parallel to a direction of flow of a write current.

Multiple-Bit Magnetic Random Access Memory Cell Employing Adiabatic Switching

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US Patent:
7109539, Sep 19, 2006
Filed:
Jul 26, 2004
Appl. No.:
10/898800
Inventors:
Yu Lu - Hopewell Junction NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 29/76
US Classification:
257295, 365 48, 365 50, 365 55, 365158, 365171, 365173, 365180
Abstract:
A multiple-bit memory cell for use in a magnetic random access memory circuit includes a first adiabatic switching storage element having a first anisotropy axis associated therewith and a second adiabatic switching storage element having a second anisotropy axis associated therewith. The first and second anisotropy axes are oriented at a substantially non-zero angle relative to at least one bit line and at least one word line corresponding to the memory cell. The memory cell is configured such that two quadrants of a write plane not used for writing one of the storage elements can be beneficially utilized to write the other storage element so that there is essentially no loss of write margin in the memory cell.

Using Permanent Magnets In Mram To Assist Write Operation

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US Patent:
7123507, Oct 17, 2006
Filed:
Aug 19, 2004
Appl. No.:
10/922298
Inventors:
David W. Abraham - Croton NY, US
Yu Lu - Hopewell Junction NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
G11C 19/02
US Classification:
365158, 365 55, 365157
Abstract:
A method, information processing system and computer readable medium for transferring data between applications on a computer is disclosed. The method includes selecting data from a first application and selecting a copy-to command for copying the data selected from the first application. The method further includes selecting a second application as a destination for the data selected. The method further includes selecting a location in the second application for inserting the data selected.

Magnetically Lined Conductors

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US Patent:
7250662, Jul 31, 2007
Filed:
Jul 31, 2003
Appl. No.:
10/632365
Inventors:
Snorri T. Ingvarsson - Reykjavik, IS
Rainer E. R. Leuschner - Mohegan Lake NY, US
Yu Lu - Hopewell Junction NY, US
Assignee:
International Business Machines Corporation - Armonk NY
Infineon Technologies North America Corporation - San Jose CA
International Classification:
H01L 29/82
US Classification:
257422, 257421
Abstract:
A conductor with improved magnetic field per current ratio is disclosed. The conductor includes a magnetic liner lining a second surface and sides thereof. The magnetic liner is preferably a super-paramagnet with high susceptibility or a ferromagnet with a microstructure where the size of the non-exchanged coupled micro domains is so small that their energy content is close to or small compared to kT that such films have super-paramagnetic properties and essentially behave like a paramagnet with high susceptibility.
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Yu H Lu from Dumont, NJ, age ~62 Get Report