Inventors:
William J. Gallagher - Ardsley NY, US
Yu Lu - Ridgefield CT, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
G11C 19/00
US Classification:
365 81, 365148, 365158, 365173, 977933
Abstract:
In one embodiment, the invention is a magnetic shift register memory device. One embodiment of a memory cell includes a magnetic column including a plurality of magnetic domains, a reader coupled to the magnetic column, for reading data from the magnetic domains, a temporary memory for storing data read from the magnetic domains, and a writer coupled to the magnetic column, for writing data in the temporary memory to the magnetic domains.