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Yu Zhu Jiang

from San Francisco, CA
Age ~42
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Also known as:
Yu Z Jiang, Yu C Jiang, Yuzhu Z Jiang, Zhu Jiang Yu, Yu Zhu Jing
Phone and address:
139 S Lake Merced Hls APT 1C, San Francisco, CA 94132
Related to:
Huiqing JiangShou Y Jiang, 75Wen He, 57Wen Wang, 79Y U JiangWen He, 79Stella Y Duan, 68Jie Jiang, 67Stella YuYouhuan Jiang Huan, 67Youhuan JiangBill S Chung, 78Alex K Chiang, 55Rong Jiang, 51Jing Jiang, 54Zhuo R Jiang, 70Jintian T Yu, 53Yao H Chiang, 82
Connected to:
Abby H Jiang, 51Audrey W Jiang, 32Baofeng F Jiang, 57Barbara F Jiang, 33Bingyan Jiang, 62Bo Jiang, 76Boni Jiang, 50Catherine C Jiang, 62Chenqian Jiang, 40Chongjun Jiang, 57

Yu Jiang Phones & Addresses

  • 139 S Lake Merced Hls APT 1C, San Francisco, CA 94132
  • 330 Ralston St, San Francisco, CA 94132 (415) 586-7178 (415) 586-9688
  • 2110 Wildflower Ct, Daly City, CA 94014
  • San Mateo, CA

Professional Records

License Records

Yu Jiang

License #:
28864 - Active
Issued Date:
Dec 20, 2010
Renew Date:
Dec 1, 2015
Expiration Date:
Nov 30, 2017
Type:
Certified Public Accountant

Business Records

Name / Title
Company / Classification
Phones & Addresses
Yu Jiang
Jinli Weiye LLC
663 Glenbrook Dr, Palo Alto, CA 94306
Yu Fang Jiang
CHINA CROWN BUFFET, INC
Yu Lan Jiang
EASTERN JIANG BUFFET INC
Yu Zhu Jiang
President
PJ TRENDS, INC
Nonclassifiable Establishments
123 Jules Ave, San Francisco, CA 94112

Publications

Us Patents

Tin Oxide Films In Semiconductor Device Manufacturing

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US Patent:
20220270877, Aug 25, 2022
Filed:
Feb 10, 2022
Appl. No.:
17/650550
Inventors:
- Fremont CA, US
Samantha S.H. Tan - Newark CA, US
Yu Jiang - Sunnyvale CA, US
Hui-Jung Wu - Pleasanton CA, US
Richard Wise - Los Gatos CA, US
Yang Pan - Los Altos CA, US
Nader Shamma - Cupertino CA, US
Boris Volosskiy - San Jose CA, US
International Classification:
H01L 21/033
H01L 21/311
H01L 21/027
H01L 21/67
H01L 21/02
H01L 21/467
H01L 21/3065
H01L 21/3213
H01L 21/465
Abstract:
A method of processing a substrate includes: providing a substrate having one or more mandrels comprising a mandrel material, wherein a layer of a spacer material coats horizontal surfaces and sidewalls of the one or more mandrels; and etching and completely removing the layer of the spacer material from the horizontal surfaces of the one or more mandrels and thereby exposing the mandrel material, without completely removing the spacer material residing at the sidewalls of the one or more mandrels. The etching includes exposing the substrate to a plasma formed using a mixture comprising a first gas and a polymer-forming gas, and wherein the etching comprises forming a polymer on the substrate. Polymer-forming gas may include carbon (C) and hydrogen (H).

Tin Oxide Films In Semiconductor Device Manufacturing

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US Patent:
20210265163, Aug 26, 2021
Filed:
May 13, 2021
Appl. No.:
17/302850
Inventors:
- Fremont CA, US
Samantha S.H. Tan - Fremont CA, US
Yu Jiang - San Jose CA, US
Hui-Jung Wu - Pleasanton CA, US
Richard Wise - Los Gatos CA, US
Yang Pan - Los Altos CA, US
Nader Shamma - Cupertino CA, US
Boris Volosskiy - San Jose CA, US
International Classification:
H01L 21/033
H01L 21/311
H01L 21/027
H01L 21/67
H01L 21/02
H01L 21/467
H01L 21/3065
H01L 21/3213
H01L 21/465
Abstract:
Tin oxide film on a semiconductor substrate is etched selectively in a presence of photoresist by exposing the substrate to at least one of hydrogen-based chemistry and chlorine-based chemistry. In some implementations, a method of processing a semiconductor substrate starts by providing a semiconductor substrate having a patterned photoresist layer overlying a tin oxide layer. Next, openings are etched in the tin oxide layer using the patterned photoresist layer as a mask, and using at least one of a hydrogen-based etch chemistry and a chlorine-based etch chemistry. After the openings have been etched in the tin oxide layer, the photoresist layer is removed using an oxygen-based etch chemistry.

Tin Oxide Films In Semiconductor Device Manufacturing

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US Patent:
20200083044, Mar 12, 2020
Filed:
Nov 18, 2019
Appl. No.:
16/687142
Inventors:
- Fremont CA, US
Samantha S.H. Tan - Fremont CA, US
Yu Jiang - San Jose CA, US
Hui-Jung Wu - Pleasanton CA, US
Richard Wise - Los Gatos CA, US
Yang Pan - Los Altos CA, US
Nader Shamma - Cupertino CA, US
Boris Volosskiy - San Jose CA, US
International Classification:
H01L 21/033
H01L 21/311
H01L 21/02
H01L 21/465
H01L 21/3213
H01L 21/3065
H01L 21/467
H01L 21/67
H01L 21/027
Abstract:
Tin oxide film on a semiconductor substrate is etched selectively in a presence of silicon (Si), carbon (C), or a carbon-containing material (e.g., photoresist) by exposing the substrate to a process gas comprising hydrogen (H) and a hydrocarbon. The hydrocarbon significantly improves the etch selectivity. In some embodiments an apparatus for processing a semiconductor substrate includes a process chamber configured for housing the semiconductor substrate and a controller having program instructions on a non-transitory medium for causing selective etching of a tin oxide layer on a substrate in a presence of silicon, carbon, or a carbon-containing material by exposing the substrate to a plasma formed in a process gas that includes Hand a hydrocarbon.

Tin Oxide Films In Semiconductor Device Manufacturing

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US Patent:
20180240667, Aug 23, 2018
Filed:
Feb 12, 2018
Appl. No.:
15/894635
Inventors:
- Fremont CA, US
Samantha Tan - Fremont CA, US
Yu Jiang - San Jose CA, US
Hui-Jung Wu - Pleasanton CA, US
Richard Wise - Los Gatos CA, US
Yang Pan - Los Altos CA, US
Nader Shamma - Cupertino CA, US
Boris Volosskiy - San Jose CA, US
International Classification:
H01L 21/033
H01L 21/02
H01L 21/311
H01L 21/027
H01L 21/67
Abstract:
Tin oxide films are used as spacers and hardmasks in semiconductor device manufacturing. In one method, tin oxide layer is formed conformally over sidewalls and horizontal surfaces of protruding features on a substrate. A passivation layer is then formed over tin oxide on the sidewalls, and tin oxide is then removed from the horizontal surfaces of the protruding features without being removed at the sidewalls of the protruding features. The material of the protruding features is then removed while leaving the tin oxide that resided at the sidewalls of the protruding features, thereby forming tin oxide spacers. Hydrogen-based and chlorine-based dry etch chemistries are used to selectively etch tin oxide in a presence of a variety of materials. In another method a patterned tin oxide hardmask layer is formed on a substrate by forming a patterned layer over an unpatterned tin oxide and transferring the pattern to the tin oxide.
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Yu Zhu Jiang from San Francisco, CA, age ~42 Get Report