Yi Zheng

6815373, Nov 9, 2004

Apr 16, 2002

10/124655

Vinita Singh - Mountain View CA
Srinivas D. Nemani - San Jose CA
Yi Zheng - San Jose CA
Lihua Li - San Jose CA
Li-Qun Xia - Santa Clara CA
Ellie Yieh - San Jose CA

Applied Materials Inc. - Santa Clara CA

H01L 2131

438787, 438788, 438789, 438790

A method for depositing a low dielectric constant film having a dielectric constant of about 3. 5 or less is provided by blending one or more cyclic organosilicon compounds, one or more aliphatic organosilicon compounds, and one or more low molecular weight aliphatic hydrocarbon compounds. In one aspect, a gas mixture comprising one or more cyclic organosilicon compounds, one or more aliphatic organosilicon compounds, one or more aliphatic hydrocarbon compounds, one or more oxidizing gases, and a carrier gas is reacted at conditions sufficient to deposit a low dielectric constant film on a substrate surface.

6890850, May 10, 2005

Jul 15, 2002

10/196498

Ping Xu - Fremont CA, US
Shankar Venkataraman - Santa Clara CA, US
Li-Qun Xia - Santa Clara CA, US
Fei Han - San Jose CA, US
Ellie Yieh - San Jose CA, US
Srinivas D. Nemani - San Jose CA, US
Kangsub Yim - Mountain View CA, US
Farhad K. Moghadam - Saratoga CA, US
Ashok K. Sinha - Palo Alto CA, US
Yi Zheng - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

H01L021/4763
H01L021/31
H01L021/469

438631, 438634, 438638, 438789

Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.

6902629, Jun 7, 2005

Apr 12, 2002

10/122481

Yi Zheng - San Jose CA, US
Vinita Singh - Mountain View CA, US
Srinivas D. Nemani - San Jose CA, US
Chen-An Chen - Milpitas CA, US
Shankar Venkataraman - Santa Clara CA, US

Applied Materials, Inc. - Santa Clara CA

B08B005/00

134 31, 134 11, 134 221, 134 2218, 134 26, 134 30, 134902, 216 63, 216 67, 216 68, 438905

Methods and apparatus for cleaning deposition chambers are presented. The cleaning methods include the use of a remote plasma source to generate reactive species from a cleaning gas to clean deposition chambers. A flow of helium or argon may be used during chamber cleaning. Radio frequency power may also be used in combination with a remote plasma source to clean deposition chambers.

7011890, Mar 14, 2006

Mar 3, 2003

10/378783

Son Van Nguyen - Los Gatos CA, US
Yi Zheng - San Jose CA, US

Applied Materials Inc. - Santa Clara CA

B32B 25/20
B05D 3/06

428447, 426131, 427101, 427387, 427470, 427489, 427494, 427495, 427508, 427515, 427595

A method for depositing a low dielectric constant film is provided. The low dielectric constant film includes alternating sublayers, which include at least one carbon-doped silicon oxide sublayer. The sublayers are deposited by a plasma process than includes pulses of RF power. The alternating sublayers are deposited from two or more compounds that include at least one organosilicon compound. The two or more compounds and processing conditions are selected such that adjacent sublayers have different and improved mechanical properties.

7056560, Jun 6, 2006

Feb 4, 2004

10/773060

Kang Sub Yim - Santa Clara CA, US
Yi Zheng - San Jose CA, US
Srinivas D. Nemani - Sunnyvale CA, US
Li-Qun Xia - Santa Clara CA, US
Eric P. Hollar - Cupertino CA, US

Applies Materials Inc. - Santa Clara CA

C23C 16/56
C23C 16/48
C23C 16/42
C23C 16/40
H01L 21/473

427551, 42725537, 42724915, 438789, 438786

A method for depositing a low dielectric constant film is provided by reacting a gas mixture including one or more linear, oxygen-free organosilicon compounds, one or more oxygen-free hydrocarbon compounds comprising one ring and one or two carbon-carbon double bonds in the ring, and one or more oxidizing gases. Optionally, the low dielectric constant film is post-treated after it is deposited. In one aspect, the post treatment is an electron beam treatment.

7060330, Jun 13, 2006

Nov 22, 2002

10/302393

Yi Zheng - San Jose CA, US
Srinivas D. Nemani - Sunnyvale CA, US
Li-Qun Xia - Santa Clara CA, US
Eric Hollar - Cupertino CA, US
Kang Sub Yim - Mountain View CA, US

Applied Materials, Inc. - Santa Clara CA

C23C 16/56

427551, 427596, 4272556, 4272491

The present invention generally provides a method for depositing a low dielectric constant film using an e-beam treatment. In one aspect, the method includes delivering a gas mixture comprising one or more organosilicon compounds and one or more hydrocarbon compounds having at least one cyclic group to a substrate surface at deposition conditions sufficient to deposit a non-cured film comprising the at least one cyclic group on the substrate surface. The method further includes substantially removing the at least one cyclic group from the non-cured film using an electron beam at curing conditions sufficient to provide a dielectric constant less than 2. 5 and a hardness greater than 0. 5 GPa.

7089651, Aug 15, 2006

Oct 5, 2001

09/971277

Yi Zheng - San Ramon CA, US
Yi-Chun Liu - Fremont CA, US

Headway Technologies, Inc. - Milpitas CA

G11B 5/17
G03F 7/00

2960324, 2960323, 2960325, 2960308, 29606, 430320, 430313, 360122, 360123

A method for forming at least two layers of electrical coils and their supportive resistive layers for a magnetic write head having an ultra-short yoke so that the second and any additional coil layers are formed on flat resistive surfaces to eliminate problems associated with inter- and intra-layer shorting and with shorting between coil and yoke. The resistive layers are formed with flat surfaces and desired apex angles by using a novel two-step photoresist scheme in which a layer of photoresist is first photoexposed and developed, then photoexposed a second time to cure a surface region that will remain flat during a final low temperature curing process.

7151053, Dec 19, 2006

Apr 28, 2005

11/118678

Ping Xu - Fremont CA, US
Shankar Venkataraman - Santa Clara CA, US
Li-Qun Xia - Santa Clara CA, US
Fei Han - San Jose CA, US
Ellie Yieh - San Jose CA, US
Srinivas D. Nemani - San Jose CA, US
Kangsub Yim - Mountain View CA, US
Farhad K. Moghadam - Saratoga CA, US
Ashok K. Sinha - Palo Alto CA, US
Yi Zheng - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

H01L 21/4763
H01L 21/31
H01L 21/469

438631, 438634, 438638, 438789

Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.