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Kwan Y Lam

from Cambridge, MA
Age ~33
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Also known as:
Yi Lam Kwan, Kwanyi Lam
Related to:
Rena M Chan, 72Tai Leiqian, 60Alan Chau, 66Siu T Wong, 53Oscar Lau, 72Tommy Chen, 61
Connected to:
Abdoulaye Lam, 42Adeline Lam, 46Alisa L Lam, 65Amethyst Lam, 56Angelica M Lam, 57Anna M Lam, 68Awilda O Lam, 53Beatrice M Lam, 76Belle B Lam, 76Blaine C Lam, 31

Kwan Lam Phones & Addresses

  • Cambridge, MA
  • 311 W 50Th St APT 4Q, New York, NY 10019
  • Los Angeles, CA

Resumes

Resumes

Kwan Lam Photo 1

Kwan Lam

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Location:
New York, NY
Work:
Columbia University Graduate School of Architecture, Planning & Preservation
Education:
Columbia University Graduate School of Architecture, Planning & Preservation
Kwan Lam Photo 2

Kwan Lam

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Location:
New York, NY
Industry:
Insurance
Education:
Rutgers University 2014 - 2015

Business Records

Name / Title
Company / Classification
Phones & Addresses
Kwan Lam
Pharmacist
St Elizabeth Hospital Auxilary
Gift Shop
736 Cambridge St, Boston, MA 02135
(617) 789-2564
Kwan Lam
Pharmacist
St. Elizabeth's Hospital Foundation, Inc
General Hospital
736 Cambridge St, Boston, MA 02135
(617) 789-3000
Kwan Kit Lam
President
Lam Shi Enterprises Inc (U.S.A.)
17813 S Main St, Gardena, CA 90248

Publications

Us Patents

Voltage And Temperature Adaptive Memory Leakage Reduction Bias Circuit

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US Patent:
20210065821, Mar 4, 2021
Filed:
Aug 28, 2019
Appl. No.:
16/553890
Inventors:
- Wilsonville OR, US
Kwan Him Lam - Irvine CA, US
International Classification:
G11C 16/30
G11C 29/02
G11C 5/14
G11C 11/41
Abstract:
This application discloses a memory device to retain stored data when receiving a voltage supply having at least a retention voltage level. The retention voltage level varies based on a supply voltage and a temperature of an environment around the memory device. A sensitive circuit can adjust the voltage supply received by the memory device based on the supply voltage and the temperature. The sensitive circuit can alter a memory bias supply voltage for the memory device to adjust the voltage supply towards the retention voltage level. The sensitive circuit can include a temperature dependent circuit to generate a bias voltage based on the supply voltage and the temperature, and an adjustment circuit to alter the memory bias supply voltage based on the bias voltage. The adjustment circuit also can include high temperature circuitry to adjust the memory bias supply voltage based on a leakage current from the memory device.
Control profile
Kwan Y Lam from Cambridge, MA, age ~33 Get Report