Jia Yi Chen

6927454, Aug 9, 2005

Oct 7, 2003

10/680820

Kevin K. Chan - Staten Island NY, US
Jia Chen - Ossining NY, US
Shih-Fen Huang - Bedford Corners NY, US
Edward J. Nowak - Essex Junction VT, US

International Business Machines Corporation - Armonk NY

H01L029/76

257336, 257 19, 257 20, 257 24, 257192, 257213, 257344, 257392

A multi-layered gate electrode stack structure of a field effect transistor device is formed on a silicon nano crystal seed layer on the gate dielectric. The small grain size of the silicon nano crystal layer allows for deposition of a uniform and continuous layer of poly-SiGe with a [Ge] of up to at least 70% using in situ rapid thermal chemical vapor deposition (RTCVD). An in-situ purge of the deposition chamber in a oxygen ambient at rapidly reduced temperatures results in a thin SiOor SiGeOinterfacial layer of 3 to 4A thick. The thin SiOor SiGeOinterfacial layer is sufficiently thin and discontinuous to offer little resistance to gate current flow yet has sufficient [O] to effectively block upward Ge diffusion during heat treatment to thereby allow silicidation of the subsequently deposited layer of cobalt. The gate electrode stack structure is used for both nFETs and pFETs.

7378336, May 27, 2008

May 9, 2005

11/124978

Kevin K. Chan - Staten Island NY, US
Jia Chen - Ossining NY, US
Shih-Fen Huang - Bedford Corners NY, US
Edward J. Nowak - Essex Junction VT, US

International Business Machines Corporation - Armonk NY

H01L 21/3205

438592, 438593, 257413

A multi-layered gate electrode stack structure of a field effect transistor device is formed on a silicon nano crystal seed layer on the gate dielectric. The small grain size of the silicon nano crystal layer allows for deposition of a uniform and continuous layer of poly-SiGe with a [Ge] of up to at least 70% using in situ rapid thermal chemical vapor deposition (RTCVD). An in-situ purge of the deposition chamber in a oxygen ambient at rapidly reduced temperatures results in a thin SiOor SiGeOinterfacial layer of 3 to 4 A thick. The thin SiOor SiGeOinterfacial layer is sufficiently thin and discontinuous to offer little resistance to gate current flow yet has sufficient [O] to effectively block upward Ge diffusion during heat treatment to thereby allow silicidation of the subsequently deposited layer of cobalt. The gate electrode stack structure is used for both nFETs and pFETs.

7465649, Dec 16, 2008

Aug 30, 2007

11/847384

Kevin K. Chan - Staten Island NY, US
Jia Chen - Ossining NY, US
Shih-Fen Huang - Bedford Corners NY, US
Edward J. Nowak - Essex Junction VT, US

International Business Machines Corporation - Armonk NY

H01L 21/3205

438592, 438593, 257413

A multi-layered gate electrode stack structure of a field effect transistor device is formed on a silicon nano crystal seed layer on the gate dielectric. The small grain size of the silicon nano crystal layer allows for deposition of a uniform and continuous layer of poly-SiGe with a [Ge] of up to at least 70% using in situ rapid thermal chemical vapor deposition (RTCVD). An in-situ purge of the deposition chamber in a oxygen ambient at rapidly reduced temperatures results in a thin SiOor SiGeOinterfacial layer of 3 to 4 A thick. The thin SiOor SiGeOinterfacial layer is sufficiently thin and discontinuous to offer little resistance to gate current flow yet has sufficient [O] to effectively block upward Ge diffusion during heat treatment to thereby allow silicidation of the subsequently deposited layer of cobalt. The gate electrode stack structure is used for both nFETs and pFETs.

7666775, Feb 23, 2010

Apr 17, 2008

12/104570

Kevin K. Chan - Staten Island NY, US
Jia Chen - Ossining NY, US
Shih-Fen Huang - Bedford Corners NY, US
Edward J. Nowak - Essex Junction VT, US

International Businesss Machines Corporation - Armonk NY

H01L 21/3205

438592, 438593, 257413

A multi-layered gate electrode stack structure of a field effect transistor device is formed on a silicon nano crystal seed layer on the gate dielectric. The small grain size of the silicon nano crystal layer allows for deposition of a uniform and continuous layer of poly-SiGe with a [Ge] of up to at least 70% using in situ rapid thermal chemical vapor deposition (RTCVD). An in-situ purge of the deposition chamber in a oxygen ambient at rapidly reduced temperatures results in a thin SiOor SiGeOinterfacial layer of 3 to 4 A thick. The thin SiOor SiGeOinterfacial layer is sufficiently thin and discontinuous to offer little resistance to gate current flow yet has sufficient [O] to effectively block upward Ge diffusion during heat treatment to thereby allow silicidation of the subsequently deposited layer of cobalt. The gate electrode stack structure is used for both nFETs and pFETs.

20200084498, Mar 12, 2020

Nov 12, 2019

16/681274

- Armonk NY, US
Jia CHEN - New York NY, US
Sarbajit K. Rakshit - Kolkata, IN
Craig M. TRIM - Ventura CA, US

H04N 21/422
H04N 5/44
H04N 21/439
H04N 21/488
H04N 21/442

Systems and methods for a cognitive display control are disclosed. A method includes: obtaining, by a computer device, context information of current content being displayed on a display; generating, by the computer device, a respective attention score for each one of plural users for the current content; receiving, by the computer device, input to change from the current content to new content; determining, by the computer device and based on the receiving, that the attention score of at least one of the plural users exceeds a threshold value; and controlling the display, by the computer device and based on the determining, to display an alert and a prompt to confirm or reject changing to the new content.

20180089198, Mar 29, 2018

Apr 10, 2017

15/483929

- San Francisco CA, US
David NATHANSON - Astoria NY, US
Jia CHEN - Foster City CA, US
Luke BALL - Berkeley CA, US
Shankara B. SUBRAMANYA - Sunnyvale CA, US
Kanishka MAHESHWARI - San Francisco CA, US
Susan KIMBERLIN - San Francisco CA, US

salesforce.com, inc. - San Francisco CA

G06F 17/30

A method of establishing personalized limits on a search responsive to a key word query in an enterprise search system is described that includes receiving an object types access history for a particular user. Applying this method, the object types access history includes records of object types selected from search results returning multiple object types and records of object types selected via interfaces other than search results. The method continues with determining and storing in computer readable memory a personalized scope of object types. The personalized scope of object types sets a limit on object types initially returned by an enterprise search system for the particular user in response to key word queries by the particular user that do not specify object types to search.

20140310272, Oct 16, 2014

May 12, 2014

14/275074

- San Francisco CA, US
David Nathanson - Astoria NY, US
Jia Chen - Foster City CA, US
Luke Ball - Berkeley CA, US
Shankara Subramanya - Sunnyvale CA, US
Kanishka Maheshwari - San Francisco CA, US
Susan Kimberlin - San Francisco CA, US

SALESFORCE.COM, INC. - San Francisco CA

G06F 17/30

707734

A method of establishing personalized limits on a search responsive to a key word query in an enterprise search system is described that includes receiving an object types access history for a particular user. Applying this method, the object types access history includes records of object types selected from search results returning multiple object types and records of object types selected via interfaces other than search results. The method continues with determining and storing in computer readable memory a personalized scope of object types. The personalized scope of object types sets a limit on object types initially returned by an enterprise search system for the particular user in response to key word queries by the particular user that do not specify object types to search.