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Xin Wu Phones & Addresses

  • Urbana, IL
  • Davis, CA
  • San Mateo, CA
  • Hillsborough, CA

Work

Company: Shanghai restaurant - Oakland, CA Sep 2012 Position: Waitress/cashier

Education

School / High School: University of California, Davis- Davis, CA 2012 Specialities: BA in Economics

Ranks

Licence: New York - Currently registered Date: 2012

Professional Records

License Records

Xin Wu

License #:
="20860" - Expired
Issued Date:
Feb 28, 2001
Renew Date:
Jun 1, 2002
Expiration Date:
May 31, 2004
Type:
Certified Public Accountant

Lawyers & Attorneys

Xin Wu Photo 1

Xin Wu - Lawyer

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Address:
Agricultural Bank of China
(108) 510-7178 (Office)
Licenses:
New York - Currently registered 2012
Education:
New York University Law School

Resumes

Resumes

Xin Wu Photo 2

Technical Service Manager

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Location:
Urbana, IL
Industry:
Research
Work:
Aocs
Technical Service Manager

Intertek Feb 1, 2016 - May 2018
Associate Scientist

The University of Arizona Aug 2011 - Jun 2015
Teaching Assistant

Nankai University Oct 2010 - May 2011
Research Assistant
Education:
University of Arizona 2011 - 2015
Master of Science, Masters, Chemistry
Nankai University 2007 - 2011
Bachelors, Bachelor of Science, Chemistry
Skills:
Icp Oes
Icp Ms
Cvaa
Autotitrator
Afm
Xps
Contact Angle
Uv/Vis
Fluorescence Spectroscopy
Nmr
Ftir
Atr Ftir
Hplc
Gc Ms
Capillary Electrophoresis
Differential Scanning Calorimetry
Tga
Sem
Lc Ms
Four Point Probe
Cvd
Atomic Layer Deposition
Spin Coating
Pvd
Cafm
Electronics
Mechanics
Clean Rooms
Machining
Sputter Deposition
Organic Synthesis
Microsoft Excel
Powerpoint
Microsoft Word
Labview
Matlab
Originlab
Mestrenova
Chemdraw
Igor Pro
Gmp
Kf Titration
Interests:
Science and Technology
Social Services
Environment
Arts and Culture
Languages:
Mandarin
English
Xin Wu Photo 3

Xin Wu

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Xin Wu Photo 4

Xin Wu

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Xin Wu Photo 5

Xin Wu

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Xin Wu Photo 6

Xin Wu

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Xin Wu Photo 7

Xin Wu

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Location:
United States
Xin Wu Photo 8

Xin Wu Oakland, CA

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Work:
Shanghai Restaurant
Oakland, CA
Sep 2012 to May 2014
Waitress/Cashier

Education:
University of California, Davis
Davis, CA
2012 to 2014
BA in Economics

Business Records

Name / Title
Company / Classification
Phones & Addresses
Xin H. Wu
Principal
Xin Hua Wu
Business Services at Non-Commercial Site
22 Bruce Ave, San Francisco, CA 94112
(415) 333-6158

Publications

Us Patents

Programmable Flux Gradient Apparatus For Co-Deposition Of Materials Onto A Substrate

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US Patent:
6364956, Apr 2, 2002
Filed:
Jan 26, 1999
Appl. No.:
09/237502
Inventors:
Youqi Wang - Atherton CA
Xin Di Wu - San Jose CA
Assignee:
Symyx Technologies, Inc. - Santa Clara CA
International Classification:
C23C 1600
US Classification:
118726, 118723 EB, 392388, 21912115, 20429801
Abstract:
An apparatus for simultaneously depositing gradients components of two or more target materials onto a substrate is disclosed. The apparatus comprises a first target material source that directs a first target material towards the substrate and a second target material source that directs a second material towards the substrate. The apparatus further comprises a gradient shutter system that blocks a first predetermined amount of the first target material and a second predetermined amount of the second target material directed towards the substrate in order to generate gradients of the first and second target materials on the substrate. The gradients of the first and second target materials being simultaneously deposited onto the substrate to form a homogenous resulting material. A method for simultaneously depositing gradients of two or more target material onto a substrate is also disclosed.

Methods And Structures For Protecting Reticles From Esd Failure

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US Patent:
6376131, Apr 23, 2002
Filed:
Apr 4, 2000
Appl. No.:
09/542127
Inventors:
Jae Cho - Sunnyvale CA
Zhi-Min Ling - Cupertino CA
Xin X. Wu - Fremont CA
Assignee:
Xilinx, Inc. - San Jose CA
International Classification:
G03F 900
US Classification:
430 5
Abstract:
A reticle that is modified to prevent bridging of the masking material (e. g. , chrome) between portions of the lithographic mask pattern during an integrated circuit fabrication process. According to a first aspect, the modification involves electrically connecting the various portions of the lithographic mask pattern that balance charges generated in the portions during fabrication processes. In one embodiment, sub-resolution wires that extend between the lithographic mask pattern portions facilitate electrical conduction between the mask pattern portions, thereby equalizing dissimilar charges. In another embodiment, a transparent conductive film is formed over the lithographic mask pattern to facilitate conduction. In accordance with a second aspect, the modification involves separating the various portions of the lithographic mask pattern into relatively small segments by providing sub-resolution gaps between the various portions, thereby minimizing the amount of charge that is generated on each portion.

Methods And Structures For Protecting Reticles From Electrostatic Damage

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US Patent:
6569584, May 27, 2003
Filed:
Jun 29, 2001
Appl. No.:
09/895538
Inventors:
Jonathan J. Ho - Fremont CA
Xin X. Wu - Fremont CA
Assignee:
Xilinx, Inc. - San Jose CA
International Classification:
G03F 900
US Classification:
430 5
Abstract:
A reticle (mask) that is modified to prevent bridging of the masking material (e. g. , chrome) between long mask lines of a lithographic mask pattern during an integrated circuit fabrication process. A dummy mask pattern is provided on the reticle adjacent to long mask lines that causes the large charge collected on the long mask line to be distributed along its length, thereby minimizing voltage potentials across a gap separating the long mask line from an adjacent mask line.

Programmable Flux Gradient Apparatus For Co-Deposition Of Materials Onto A Substrate

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US Patent:
6632285, Oct 14, 2003
Filed:
Jul 30, 2001
Appl. No.:
09/919168
Inventors:
Youqi Wang - Atherton CA
Xin Di Wu - San Jose CA
Assignee:
Symyx Technologies, Inc. - Santa Clara CA
International Classification:
C23C 1600
US Classification:
118726, 118723 EB
Abstract:
An apparatus for simultaneously depositing gradients components of two or more target materials onto a substrate is disclosed. The apparatus comprises a first target material source that directs a first target material towards the substrate and a second target material source that directs a second material towards the substrate. The apparatus further comprises a gradient shutter system that blocks a first predetermined amount of the first target material and a second predetermined amount of the second target material directed towards the substrate in order to generate gradients of the first and second target materials on the substrate. The gradients of the first and second target materials being simultaneously deposited onto the substrate to form a homogenous resulting material. A method for simultaneously depositing gradients of two or more target material onto a substrate is also disclosed.

Method Of Generating An Ic Mask Using A Reduced Database

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US Patent:
6868537, Mar 15, 2005
Filed:
Feb 25, 2002
Appl. No.:
10/082991
Inventors:
Jonathan J. Ho - Fremont CA, US
Xin X. Wu - Fremont CA, US
Zicheng Gary Ling - San Jose CA, US
Jan L. de Jong - Cupertino CA, US
Assignee:
Xilinx, Inc. - San Jose CA
International Classification:
G06F017/50
US Classification:
716 19, 716 20, 716 21
Abstract:
For IC devices that have repeating structures, a method of generating a database for making a mask layer starts with a hierarchical database describing at least one repeating element in the layer, a skeleton that surrounds the repeating elements, and instructions as to where to locate the repeating elements within the skeleton. This database is modified to generate a database that has optical proximity correction (OPC) for diffraction of light that will pass through the mask and expose photoresist on the IC layer. The optical-proximity corrected mask database is fractured by a mask house using instructions on how the modified data base will be divided to form repeating elements that are still identical after OPC, a mask skeleton that includes non-repeating elements, and instructions for placement of the repeating elements in the skeleton. Thus the resulting mask database is smaller than a mask database that includes all copies of repeating elements.

Semiconductor Die With High Density Offset-Inline Bond Arrangement

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US Patent:
7064450, Jun 20, 2006
Filed:
May 11, 2004
Appl. No.:
10/842756
Inventors:
Abu K. Eghan - San Jose CA, US
Richard C. Li - Cupertino CA, US
Xin X. Wu - Fremont CA, US
Assignee:
Xilinx, Inc. - San Jose CA
International Classification:
H01L 23/48
US Classification:
257786, 257 48, 257692, 257773, 257775, 257780
Abstract:
A pad pattern of a die includes first and second sets of elongated pads. The first set of elongated pads is interleaved with the second set of elongated pads. Each of the elongated pads has a bond pad area and a probe pad. Each bond pad area has a first constant width along a substantial portion thereof. Similarly, each probe pad area has a second constant width along a substantial portion thereof. The first constant width is greater than the second constant width. Each elongated pad in the first set has a first orientation. Similarly, each elongated pad in the second set has a second orientation, opposite the first orientation.

Semiconductor Component Having Test Pads And Method And Apparatus For Testing Same

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US Patent:
7235412, Jun 26, 2007
Filed:
May 11, 2004
Appl. No.:
10/842770
Inventors:
Mohsen Hossein Mardi - Fremont CA, US
Jae Cho - Saratoga CA, US
Xin X. Wu - Fremont CA, US
Chih-Chung Wu - Hsinchu, TW
Shih-Liang Liang - Chung Li, TW
Sanjiv Stokes - Los Altos CA, US
Hassan K. Bazargan - San Jose CA, US
Assignee:
XILINX, Inc. - San Jose CA
International Classification:
H01L 21/66
US Classification:
438 14, 438 15, 438 18
Abstract:
A semiconductor component having test pads and a method and apparatus for testing the same is described. In an example, an un-bumped substrate is obtained having a pattern of bond pads configured to support bumped contacts and a plurality of test pads. Each of the plurality of test pads is in electrical communication with a respective one of the bond pads. The substrate is tested using the plurality of test pads. In another example, a substrate is fabricated having a pattern of bond pads configured to support bumped contacts and a plurality of test pads. Each of the plurality of test pads is in electrical communication with a respective one of the bond pads. The substrate is tested using the plurality of test pads. An insulating layer is formed over the plurality of test pads.

Method And Apparatus For Compensating An Integrated Circuit Layout For Mechanical Stress Effects

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US Patent:
7673270, Mar 2, 2010
Filed:
Mar 13, 2007
Appl. No.:
11/717811
Inventors:
Yan Wang - Campbell CA, US
Nui Chong - Cupertino CA, US
Bang-Thu Nguyen - Santa Clara CA, US
Jonathan Jung-Ching Ho - Fremont CA, US
Qi Lin - Cupertino CA, US
Yuhao Luo - San Jose CA, US
Hing Yee Angela Wong - San Jose CA, US
Xin X. Wu - Fremont CA, US
Yuezhen Fan - San Jose CA, US
Assignee:
Xilinx, Inc. - San Jose CA
International Classification:
G06F 17/50
US Classification:
716 12, 716 1, 716 11
Abstract:
Method and apparatus for compensating an integrated circuit design for mechanical stress effects. One aspect of the invention relates to designing an integrated circuit. Layout data is obtained that describes layers of the integrated circuit. At least one of the layers is analyzed to detect at least one structure susceptible to damage from mechanical stress. A bias is automatically added to each of the at least one structure to reduce mechanical stress of the at least one structure as fabricated. Augmented layout data is then provided for the integrated circuit.
Xin Wu from Urbana, IL Get Report