Xiao F Liu

7276787, Oct 2, 2007

Dec 5, 2003

10/729254

Daniel Charles Edelstein - White Plains NY, US
Paul Stephen Andry - Mohegan Lake NY, US
Leena Paivikki Buchwalter - Hopewell Junction NY, US
Jon Alfred Casey - Poughkeepsie NY, US
Sherif A. Goma - Hawthorne NY, US
Raymond R. Horton - Dover Plains NY, US
Gareth Geoffrey Hougham - Ossining NY, US
Michael Wayne Lane - Cortlandt Manor NY, US
Xiao Hu Liu - Croton on Hudson NY, US
Chirag Suryakant Patel - Peekskill NY, US
Edmund Juris Sprogis - Underhill VT, US
Michelle Leigh Steen - Danbury CT, US
Brian Richard Sundlof - Beacon NY, US
Cornelia K. Tsang - Mohegan Lake NY, US
George Frederick Walker - New York NY, US

International Business Machines Corporation - Armonk NY

H01L 23/48
H01L 23/498
H01L 21/4763
H01L 29/40
H01L 23/52

257698, 257E23067, 257E23075, 257E23011, 257E25013, 257E21597, 257E23006, 257E23172, 257E23174, 257774, 257773, 257702, 257680, 257700, 257758

A carrier structure and method for fabricating a carrier structure with through-vias each having a conductive structure with an effective coefficient of thermal expansion which is less than or closely matched to that of the substrate, and having an effective elastic modulus value which is less than or closely matches that of the substrate. The conductive structure may include concentric via fill areas having differing materials disposed concentrically therein, a core of the substrate material surrounded by an annular ring of conductive material, a core of CTE-matched non-conductive material surrounded by an annular ring of conductive material, a conductive via having an inner void with low CTE, or a full fill of a conductive composite material such as a metal-ceramic paste which has been sintered or fused.

7394089, Jul 1, 2008

Aug 25, 2006

11/467294

James P. Doyle - Bronx NY, US
Bruce G. Elmegreen - Golden Bridge NY, US
Lia Krusin-Elbaum - Dobbs Ferry NY, US
Chung Hon Lam - Peekskill NY, US
Xiao Hu Liu - Briarcliff Manor NY, US
Dennis M. Newns - Yorktown Heights NY, US
Christy S. Tyberg - Mahopac NY, US

International Business Machines Corporation - Armonk NY

H01L 47/00

257 4, 257209, 257529, 257E2917

An electrically re-programmable fuse (eFUSE) device for use in integrated circuit devices includes an elongated heater element, an electrically insulating liner surrounding an outer surface of the elongated heater element, corresponding to a longitudinal axis thereof, leaving opposing ends of the elongated heater element in electrical contact with first and second heater electrodes. A phase change material (PCM) surrounds a portion of an outer surface of the electrically insulating liner, a thermally and electrically insulating layer surrounds an outer surface of the PCM, with first and second fuse electrodes in electrical contact with opposing ends of the PCM. The PCM is encapsulated within the electrically insulating liner, the thermally and electrically insulating layer, and the first and second fuse electrodes.

7417315, Aug 26, 2008

Dec 5, 2002

10/310532

Gareth Geoffrey Hougham - Ossining NY, US
S. Jay Chey - Ossining NY, US
James Patrick Doyle - Bronx NY, US
Xiao Hu Liu - Croton On Hudson NY, US
Christopher V. Jahnes - Upper Saddle River NJ, US
Paul Alfred Lauro - Brewster NY, US
Nancy C. LaBianca - Yalesville CT, US
Michael J. Rooks - Briarcliff Manor NY, US

International Business Machines Corporation - Armonk NY

H01L 21/302
B32B 5/22
G02B 26/00

257747, 257758, 257E2308, 257E23128, 4283179, 359291

A Negative Thermal Expansion system (NTEs) device for TCE compensation or CTE compensation in elastomer composites and conductive elastomer interconnects in microelectronic packaging. One aspect of the present invention provides a method for fabricating micromachine devices that have negative thermal expansion coefficients that can be made into a composite for manipulation of the TCE of the material. These devices and composites made with these devices are in the categories of materials called “smart materials” or “responsive materials. ” Another aspect of the present invention provides microdevices comprised of dual opposed bilayers of material where the two bilayers are attached to one another at the peripheral edges only, and where the bilayers themselves are at a minimum stress conditions at a reference temperature defined by the temperature at which the bilayers are formed. These devices have the technologically useful property of volumetrically expanding upon lowering of the device temperature below the reference or processing temperature.

7491965, Feb 17, 2009

May 28, 2008

12/127994

James P. Doyle - Bronx NY, US
Bruce G. Elmegreen - Golden Bridge NY, US
Lia Krusin-Elbaum - Dobbs Ferry NY, US
Chung Hon Lam - Peekskill NY, US
Xiao Hu Liu - Briarcliff Manor NY, US
Dennis M. Newns - Yorktown Heights NY, US
Christy S. Tyberg - Mahopac NY, US

International Business Machines Corporation - Armonk NY

H01L 47/00

257 4, 257209, 257529, 257E2917

An electrically re-programmable fuse (eFUSE) device for use in integrated circuit devices includes an elongated heater element, an electrically insulating liner surrounding an outer surface of the elongated heater element, corresponding to a longitudinal axis thereof, leaving opposing ends of the elongated heater element in electrical contact with first and second heater electrodes. A phase change material (PCM) surrounds a portion of an outer surface of the electrically insulating liner, a thermally and electrically insulating layer surrounds an outer surface of the PCM, with first and second fuse electrodes in electrical contact with opposing ends of the PCM. The PCM is encapsulated within the electrically insulating liner, the thermally and electrically insulating layer, and the first and second fuse electrodes.

7556979, Jul 7, 2009

Oct 31, 2007

11/932385

Gareth Geoffrey Hougham - Ossining NY, US
S. Jay Chey - Ossining NY, US
James Patrick Doyle - Bronx NY, US
Xiao Hu Liu - Croton On Hudson NY, US
Christopher V. Jahnes - Upper Saddle River NJ, US
Paul Alfred Lauro - Brewster NY, US
Nancy C. LaBianca - Yalesville CT, US
Michael J. Rooks - Briarcliff Manor NY, US

International Business Machines Corporation - Armonk NY

H01L 21/00

438 53, 257E21254, 257E27008

A Negative Thermal Expansion system (NTEs) device for TCE compensation or CTE compensation in elastomer composites and conductive elastomer interconnects in microelectronic packaging. One aspect of the present invention provides a method for fabricating micromachine devices that have negative thermal expansion coefficients that can be made into a composite for manipulation of the TCE of the material. These devices and composites made with these devices are in the categories of materials called “smart materials” or “responsive materials. ” Another aspect of the present invention provides microdevices comprised of dual opposed bilayers of material where the two bilayers are attached to one another at the peripheral edges only, and where the bilayers themselves are at a minimum stress conditions at a reference temperature defined by the temperature at which the bilayers are formed. These devices have the technologically useful property of volumetrically expanding upon lowering of the device temperature below the reference or processing temperature.

7579069, Aug 25, 2009

Nov 6, 2003

10/702280

Gareth Geoffrey Hougham - Ossining NY, US
Xiao Hu Liu - Croton On Hudson NY, US
S. Jay Chey - Ossining NY, US
James Patrick Doyle - Bronx NY, US
Joseph Zinter, Jr. - Brewster NY, US
Michael J. Rooks - Briarcliff Manor NY, US
Brian Richard Sundlof - Beacon NY, US
Jon Alfred Casey - Poughkeepsie NY, US

International Business Machines Corporation - Armonk NY

B32B 15/02

4283133, 4283134, 4283139, 428570, 252512

A negative coefficient of thermal expansion particle includes a first bilayer having a first bilayer inner layer and a first bilayer outer layer, and a second bilayer having a second bilayer inner layer and a second bilayer outer layer. The first and second bilayers are joined together along perimeters of the first and second bilayer outer layers and first and second bilayer inner layers, respectively. The first bilayer inner layer and the second bilayer inner layer are made of a first material and the first bilayer outer layer and the second bilayer outer layer are made of a second material. The first material has a greater coefficient of thermal expansion than that of the second material.

7582670, Sep 1, 2009

Apr 13, 2005

11/104422

Longgui Wang - Flushing NY, US
Xiao Mei Liu - Flushing NY, US
Lian Mo - Palo Alto CA, US
Simon K. Mencher - New York NY, US

Natrogen Therapeutics, Inc. - Milwaukee WI

A61K 31/40
A61K 31/404
A61K 31/56

514414, 514415, 514416, 514406, 514171, 51425409, 514570, 514159

The invention relates to pharmaceutical compositions and methods of treating inflammatory-related diseases associated with pro-inflammatory cytokine expression and/or reduced expression of anti-inflammatory cytokines. The method typically comprises administration of one or more compounds selected from isoindigo, indigo, indirubin, or derivatives thereof, such as, Meisoindigo and NATURA. Preferably the pharmaceutical composition comprises one or more compounds selected from isoindigo, indigo, indirubin, or derivatives thereof, an anti-inflammatory agent, and a pharmaceutically acceptable carrier.

7790577, Sep 7, 2010

Jul 17, 2008

12/175006

Xiao Hu Liu - Briarcliff Manor NY, US
Chih-Chao Yang - Glenmont NY, US
Haining Sam Yang - Wappingers Falls NY, US

International Business Machines Corporation - Armonk NY

H01L 21/00

438462, 438460

An integrated circuit chip and a method of fabricating an integrated circuit chip. The integrated circuit chip includes: a set of wiring levels stacked from a first wiring level to a last wiring level; and a respective void in each wiring level of two or more wiring levels of the set wiring levels, each respective void extending in a continuous ring parallel and proximate to a perimeter of the integrated circuit chip, a void of a higher wiring level stacked directly over but not contacting a void of a lower wiring level, the respective voids forming a crack stop.