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Xiao Hong Liu

from Castro Valley, CA
Age ~74
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Also known as:
Xiao H Liu, Xiao L Liu, Xiaohong Liu, Hong Liu Xiao, Xtao H Liu, Xiaoyao Liu
Related to:
Zu L Liu, 78
Connected to:
Adela Liu, 73Alec X Liu, 39Alpha T Liu, 46Amon Y Liu, 58Andrea Y Liu, 46Anqi Liu, 39Arden K Liu, 64Ba S Liu, 62Bailu Liu, 35Ban Liu, 48

Xiao Liu Phones & Addresses

  • Castro Valley, CA
  • San Leandro, CA
  • 2026 Mitchell St, Oakland, CA 94601 (510) 533-8021
  • Arcadia, CA
  • Miami, FL
  • Olympia, WA
  • Lake Forest, CA
  • Santa Monica, CA

Professional Records

Medicine Doctors

Xiao Liu Photo 1

Xiao X Liu, Rowland Heights CA - OD (Doctor of Optometry)

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Specialties:
Optometry
Address:
17572 Colima Rd, Rowland Heights, CA 91748
(626) 810-2022 (Phone), (626) 810-0993 (Fax)
Languages:
English
Xiao Liu Photo 2

Xiao J. Liu

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Specialties:
Internal Medicine
Work:
Baystate Health AssociatesBaystate Medical Center
759 Chestnut St, Springfield, MA 01199
(413) 794-0000 (phone), (413) 794-0306 (fax)
Education:
Medical School
Liaoning Coll of Trad Chinese Med, Shenyang, Liaoning, China
Graduated: 1987
Languages:
Chinese
English
French
Spanish
Description:
Dr. Liu graduated from the Liaoning Coll of Trad Chinese Med, Shenyang, Liaoning, China in 1987. She works in Springfield, MA and specializes in Internal Medicine. Dr. Liu is affiliated with Baystate Medical Center.
Xiao Liu Photo 3

Xiao Xi Liu, Fullerton CA

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Specialties:
Optometrist
Address:
2575 Yorba Linda Blvd, Fullerton, CA 92831
17572 Colima Rd, Rowland Heights, CA 91748

Real Estate Brokers

Xiao Liu Photo 4

Xiao Yan Liu, Mill Valley CA

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Specialties:
Buyer's Agent
Listing Agent
Work:
Xiao Yan Liu
3701 Buchanan Street, Mill Valley, CA 94941
(415) 816-4289 (Office)

Lawyers & Attorneys

Xiao Liu Photo 5

Xiao Liu, Cupertino CA - Lawyer

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Address:
The Law Office of Xiao Lin
4679 Torrey Circle D 106, Cupertino, CA 95014
Licenses:
New York - Currently registered 2006
Education:
Northwestern University School of Law
Xiao Liu Photo 6

Xiao Liu, Saratoga CA - Lawyer

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Address:
The Law Office of Xiao Liu
19975 Glasgow Dr, Saratoga, CA 95070
(415) 335-9158 (Office)
Licenses:
California - Active 2010
Education:
Northwestern University School of Law
Xiao Liu Photo 7

Xiao Jeff Liu - Lawyer

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Address:
Gide Loyrette Nouel
Licenses:
New York - Currently registered 2011
Education:
University of Michigan Law School

Business Records

Name / Title
Company / Classification
Phones & Addresses
Xiao Zhong Liu
President
Spintech Bearing Company
4032 Rdg Line Dr, Chino Hills, CA 91709
Xiao Qiao Liu
President
The Chinawood, Inc
5610 Soto St, Walnut Park, CA 90255
Xiao Liu
President
Huaqing Metal Inc
18738 Aguiro St, Whittier, CA 91748
Xiao Liu
President
Expresscomm International Inc
18955 Betley St, Whittier, CA 91748
Xiao Ping Liu
President
Npr Transport Inc
3724 Pasadena Ave, Los Angeles, CA 90031
Xiao Wei Liu
President
Royal Spa Service Inc
Nonclassifiable Establishments
9835 Marshall St, El Monte, CA 91731
Xiao Liu
President
Cb Hearthside-Y
4555 Hopyard Rd, Pleasanton, CA 94588
5980 Stoneridge Dr, Pleasanton, CA 94588
(215) 493-9080
Xiao Hong Liu
President
NEW LOUIE'S, INC
Fruits & Vegetables Retail · Fruits & Vegetables Wholesale
1213 Stockton St, San Francisco, CA 94133
(415) 781-8654

Publications

Isbn (Books And Publications)

Limit Analysis in Soil Mechanics

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Author

Xiao Linda Liu

ISBN #

0444430423

Us Patents

Method And Apparatus For Growing Semiconductor Crystals With A Rigid Support With Carbon Doping And Resistivity Control And Thermal Gradient Control

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US Patent:
6896729, May 24, 2005
Filed:
Jul 3, 2002
Appl. No.:
10/190001
Inventors:
Xiao Gordon Liu - Fremont CA, US
Wei Guo Liu - Sunnyvale CA, US
Assignee:
AXT, Inc. - Fremont CA
International Classification:
C30B011/06
US Classification:
117 81, 117 82, 117 83, 117223
Abstract:
Group III-V, II-VI and related monocrystalline compounds are grown with a rigid support of a sealed ampoule, carbon doping and resistivity control, and thermal gradient control in a crystal growth furnace. A support cylinder provides structural support for the combined sealed ampoule crucible assembly, while low-density insulating material inside the support cylinder deters convection and conduction heating. Radiation channels penetrating the low-density material provide pathways for radiation heating into and out of the seed well and transition regions of the crystal growth crucible. A hollow core in the insulation material directly beneath the seed well provides cooling in the center of the growing crystal, which enables uniform, level growth of the crystal ingot and a flat crystal-melt interface which results in crystal wafers with uniform electrical properties.

Reprogrammable Fuse Structure And Method

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US Patent:
7388273, Jun 17, 2008
Filed:
Jun 14, 2005
Appl. No.:
11/152750
Inventors:
Geoffrey W. Burr - Cupertino CA, US
Chandrasekharan Kothandaraman - Hopewell Junction NY, US
Chung Hon Lam - Peekskill NY, US
Xiao Hu Liu - Briarcliff Manor NY, US
Stephen M. Rossnagel - Pleasantville NY, US
Christy S. Tyberg - Mahopac NY, US
Robert L. Wisnieff - Ridgefield CT, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 29/00
US Classification:
257529, 257530, 257E23149, 257E21592
Abstract:
A reversible fuse structure in an integrated circuit is obtained through the implementation of a fuse cell having a short thin line of phase change materials in contact with via and line structures capable of passing current through the line of phase change material (fuse cell). The current is passed through the fuse cell in order to change the material from a less resistive material to a more resistive material through heating the phase change material in the crystalline state to the melting point then quickly quenching the material into the amorphous state. The reversible programming is achieved by passing a lower current through the fuse cell to convert the high resistivity amorphous material to a lower resistivity crystalline material. Appropriate sense-circuitry is integrated to read the information stored in the fuses, wherein said sense circuitry is used to enable or disable circuitry.

Method Of Treating Inflammatory Arthritis

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US Patent:
7855223, Dec 21, 2010
Filed:
Jul 26, 2006
Appl. No.:
11/494362
Inventors:
Ruihuan Chen - Palo Alto CA, US
Simon K. Mencher - New York NY, US
Allen Tsao - Windlake WI, US
Xiao Mei Liu - Flushing NY, US
Longgui Wang - Flushing NY, US
Assignee:
Natrogen Therapeutics International, Inc. - New York NY
International Classification:
A61K 31/40
A61K 31/405
A61K 31/56
A61K 31/19
US Classification:
514414, 514415, 514416, 514 23, 514159, 514171, 514570, 51425409
Abstract:
The present invention is directed to a method for treating inflammatory arthritis in a mammal. The method typically comprises administering to an animal a therapeutically effective amount of at least one compound selected from indigo, isoindigo, indirubin or derivatives thereof, such as NATURA-α or NATURA. The present invention is further directed to pharmaceutical compositions that include a therapeutically effective amount of at least one compound of the invention, an anti-inflammatory arthritis agent and a pharmaceutically acceptable carrier.

Reprogrammable Fuse Structure And Method

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US Patent:
7960808, Jun 14, 2011
Filed:
Aug 23, 2007
Appl. No.:
11/844109
Inventors:
Geoffrey W. Burr - Cupertino CA, US
Chandrasekharan Kothandaraman - Hopewell Junction NY, US
Chung Hon Lam - Peekskill NY, US
Xiao Hu Liu - Briarcliff Manor NY, US
Stephen M. Rossnagel - Pleasantville NY, US
Christy S. Tyberg - Mahopac NY, US
Robert L. Wisnieff - Ridgefield CT, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 29/00
US Classification:
257529, 257530, 257E23147, 257E23149, 257E21592
Abstract:
A reversible fuse structure in an integrated circuit is obtained through the implementation of a fuse cell having a short thin line of phase change materials in contact with via and line structures capable of passing current through the line of phase change material (fuse cell). The current is passed through the fuse cell in order to change the material from a less resistive material to a more resistive material through heating the phase change material in the crystalline state to the melting point then quickly quenching the material into the amorphous state. The reversible programming is achieved by passing a lower current through the fuse cell to convert the high resistivity amorphous material to a lower resistivity crystalline material. Appropriate sense-circuitry is integrated to read the information stored in the fuses, wherein said sense circuitry is used to enable or disable circuitry.

Reprogrammable Fuse Structure And Method

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US Patent:
8278155, Oct 2, 2012
Filed:
May 4, 2011
Appl. No.:
13/100456
Inventors:
Geoffrey W. Burr - Cupertino CA, US
Chandrasekharan Kothandaraman - Hopewell Junction NY, US
Chung Hon Lam - Peekskill NY, US
Xiao Hu Liu - Briarcliff Manor NY, US
Stephen M. Rossnagel - Pleasantville NY, US
Christy S. Tyberg - Mahopac NY, US
Robert L. Wisnieff - Ridgefield CT, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 21/82
H01L 21/326
H01L 21/479
US Classification:
438131, 438132, 438467, 438600, 438601, 257E21592
Abstract:
A reversible fuse structure in an integrated circuit is obtained through the implementation of a fuse cell having a short thin line of phase change materials in contact with via and line structures capable of passing current through the line of phase change material (fuse cell). The current is passed through the fuse cell in order to change the material from a less resistive material to a more resistive material through heating the phase change material in the crystalline state to the melting point then quickly quenching the material into the amorphous state. The reversible programming is achieved by passing a lower current through the fuse cell to convert the high resistivity amorphous material to a lower resistivity crystalline material. Appropriate sense-circuitry is integrated to read the information stored in the fuses, wherein said sense circuitry is used to enable or disable circuitry.

Apparatus For Growing Monocrystalline Group Ii-Vi And Iii-V Compounds

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US Patent:
20030172870, Sep 18, 2003
Filed:
Mar 14, 2002
Appl. No.:
10/097844
Inventors:
Xiao Gordon Liu - Fremont CA, US
Weiguo Liu - Sunnyvale CA, US
Assignee:
AXT, Inc.
International Classification:
C30B035/00
C30B001/00
US Classification:
117/200000, 117/900000
Abstract:
An apparatus for producing large diameter monocrystalline Group III-V, II-VI compounds that have reduced crystal defect density, improved crystal growth yield, and improved bulk material characteristics. The apparatus comprises a crucible or boat, an ampoule that contains the crucible or boat, a heating unit disposed about the ampoule, and a liner disposed between the heating unit and the ampoule. The liner is preferably composed of a quartz material. When the liner and the ampoule are made of the same material, such as quartz, the thermal expansion coefficients of the liner and ampoule are the same, which significantly increases the lifetime of the liner and the single-crystal yield.

Apparatus And Method For Balanced Pressure Growth Of Group Iii-V Monocrystalline Semiconductor Compounds

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US Patent:
20040173140, Sep 9, 2004
Filed:
Mar 5, 2003
Appl. No.:
10/378991
Inventors:
Xiao Liu - Fremont CA, US
Morris Young - Fremont CA, US
International Classification:
C30B009/00
C30B011/00
C30B017/00
C30B021/02
C30B028/06
US Classification:
117/081000, 117/083000
Abstract:
An apparatus and a method for growth of Group III-V monocrystalline semiconductor compounds in a closed system with a balanced pressure maintained between the inside of a sealed ampoule and a pressure vessel. The vapor pressure inside the sealed ampoule can be controlled by temperature, the amount of polycrystalline charge and an amount of material such as phosphorus inside the sealed ampoule. Filling and release of an inert gas is used to control the pressure in the pressure vessel.

Ferromagnetic Cores Of Amorphous Ferromagnetic Metal Alloys And Electronic Devices Having The Same

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US Patent:
20140043132, Feb 13, 2014
Filed:
Nov 9, 2011
Appl. No.:
13/884926
Inventors:
Marios D. Demetriou - Los Angeles CA, US
William L. Johnson - San Marino CA, US
Xiao Liu - Pasadena CA, US
Joseph P. Schramm - Albany CA, US
Georg KAltenboeck - Pasadena CA, US
Assignee:
California Institute of Technology - Pasadena CA
International Classification:
H01F 27/24
H01F 41/02
US Classification:
336233, 29607
Abstract:
Ferromagnetic cores made from amorphous glasses and methods of forming ferromagnetic cores from metallic glasses are provided. The method forms a magnetic core from a section of a series of concentrically nested ferromagnetic tubes formed of an amorphous metallic material having a Curie-point temperature above room temperature and demonstrating soft ferromagnetic properties, thereby simplifying the manufacturing process and improving the electrical and mechanical performance of the core itself.
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Xiao Hong Liu from Castro Valley, CA, age ~74 Get Report