Search

Xiao M Chen

from San Leandro, CA
Age ~53
Get Report
Also known as:
Xiaomei M Chen
Related to:
Liya Chen, 38
Connected to:
Ai S Chen, 71Ai Chen, 70Alfred C Chen, 53Alix Y Chen, 33Aloysius J Chen, 93Amie K Chen, 63Amily M Chen, 35Andersen Y Chen, 32Angela B Chen, 44Angeline Chen, 48

Xiao Chen Phones & Addresses

  • San Leandro, CA
  • Manteca, CA
  • Stockton, CA
  • 621 Central Ave, Alameda, CA 94501
  • 910 Central Ave, Alameda, CA 94501
  • Oakland, CA
  • San Francisco, CA

Professional Records

License Records

Xiao Chen

License #:
32278 - Active
Issued Date:
Aug 5, 2014
Renew Date:
Dec 1, 2015
Expiration Date:
Nov 30, 2017
Type:
Certified Public Accountant

Lawyers & Attorneys

Xiao Chen Photo 1

Xiao di Chen - Lawyer

View page
Licenses:
New York - Currently registered 2012
Education:
St. John's University Law School
Xiao Chen Photo 2

Xiao Chen - Lawyer

View page
ISLN:
1000643394
Admitted:
2011

Resumes

Resumes

Xiao Chen Photo 3

Xiao Chen Concord, CA

View page
Work:
Kelly Scientific

Nov 2013 to 2000
QC Biochemist - Special Manufacturing (Contractor)
Bio-Rad
Hercules, CA
Jul 2013 to Nov 2013
Production Biochemist - Bio-Plex (Contractor)
California State University
Fullerton, CA
Aug 2010 to Dec 2012
Graduate Researcher/Teaching Associate
Lawrence Berkeley National Laboratory
Berkeley, CA
Jun 2008 to Jul 2010
Research Associate
University of California
Berkeley, CA
Sep 2005 to May 2008
Undergraduate Research Assistant
Education:
California State University
Fullerton, CA
Aug 2010 to Dec 2012
Master of Science in Biochemistry
University of California
Berkeley, CA
Jan 2004 to May 2008
Bachelor of Science in Chemical Biology
Xiao Chen Photo 4

Xiao Li Chen San Francisco, CA

View page
Work:
Park Side Endodontice
San Francisco, CA
May 2014 to Oct 2014
Registered Dental Assistant
Nob Hill Dental
San Francisco, CA
Feb 2014 to May 2014
Registered Dental Assistant
Tender Love Dental Care Corporation
Alameda, CA
Dec 2012 to May 2014
Registered Dental Assistant
Education:
CCSF
San Francisco, CA
2010 to 2012
License in RDA
Xiao Chen Photo 5

Xiao Chen St. Louis, MO

View page
Work:
WORK EXPREIENCE

1996 to 2000
Bankruptcy Assistant/Assistant System Manager/Chapter
Catholic Charities Elderly Services

1995 to 1995
Secretary
Chinese Language School

1990 to 1995
Teacher
University of Guangzhou
Guangzhou, CN
1988 to 1990
Lecturer of Chemistry
Insturctor of Chemistry/College of Education, China

1982 to 1988
Education:
University of Hawaii Community Colleges
2000
Analysis/Design
The Board of Education
1994 to 1995
Certificate of Data in Majoring
Nan Normal University
1988
Certificate of Lecturer in Chemistry
Shan University
1986 to 1987
Master's in Majoring
Nan Normal University
1984
Physical Chemistry
The South China Institute of Technology
1978 to 1982
Bachelor's in Physical Chemistry

Business Records

Name / Title
Company / Classification
Phones & Addresses
Xiao C. Chen
President
Long's Inc
7501 Denison Pl, Hayward, CA 94552
Xiao Xia Chen
President
P & K Garment
Sewing Contractor
2169 Msn St, San Francisco, CA 94110
(415) 864-2313
Xiao Lin Chen
President
GATEWAY PACIFIC CORPORATION
25 Eugenia Way, Burlingame, CA 94010
225 Bush St, San Francisco, CA 94104
201 Billingsgate Ln, San Mateo, CA 94404
Xiao Xia Chen
President
C & C GARMENT INC
Business Services
2169 Msn St 2F, San Francisco, CA 94110
2169 Msn St, San Francisco, CA 94110
Xiao B. Chen
Managing
Suntrans International LLC
Metals Service Center
548 Doane St, San Lorenzo, CA 94580
Xiao Yan Chen
Managing
2933 San Juan LLC
Real Estate Investment · Nonclassifiable Establishments
924 Grant Ave, San Francisco, CA 94108
Xiao Chen
CHEN LIU LLC
Xiao Ping Chen
AURIMAX INTERNATIONAL LTD

Publications

Us Patents

Use Of Cl2 And/Or Hcl During Silicon Epitaxial Film Formation

View page
US Patent:
7682940, Mar 23, 2010
Filed:
Sep 14, 2005
Appl. No.:
11/227974
Inventors:
Zhiyuan Ye - Cupertino CA, US
Yihwan Kim - Milpitas CA, US
Xiaowei Li - Sunnyvale CA, US
Ali Zojaji - Santa Clara CA, US
Nicholas C. Dalida - Fremont CA, US
Jinsong Tang - Santa Clara CA, US
Xiao Chen - San Jose CA, US
Arkadii V. Samoilov - Sunnyvale CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/20
H01L 21/36
US Classification:
438478, 438482, 438488, 438719, 438753, 257E2109, 257E21115, 257E21461, 257E21214, 257E21215
Abstract:
In a first aspect, a first method of forming an epitaxial film on a substrate is provided. The first method includes (a) providing a substrate; (b) exposing the substrate to at least a silicon source so as to form an epitaxial film on at least a portion of the substrate; and (c) exposing the substrate to HCl and Cl2 so as to etch the epitaxial film and any other films formed during step (b). Numerous other aspects are provided.

Use Of Cl2 And/Or Hcl During Silicon Epitaxial Film Formation

View page
US Patent:
7732305, Jun 8, 2010
Filed:
Jul 28, 2006
Appl. No.:
11/494903
Inventors:
Zhiyuan Ye - Cupertino CA, US
Yihwan Kim - Milpitas CA, US
Xiaowei Li - Sunnyvale CA, US
Ali Zojaji - Santa Clara CA, US
Nicholas C. Dalida - Fremont CA, US
Jinsong Tang - Santa Clara CA, US
Xiao Chen - San Jose CA, US
Arkadii V. Samoilov - Sunnyvale CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/20
US Classification:
438478, 438488, 438719, 438753, 257E23116, 257E23128, 257E21502
Abstract:
In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.

Use Of Cl2 And/Or Hcl During Silicon Epitaxial Film Formation

View page
US Patent:
7960256, Jun 14, 2011
Filed:
May 12, 2010
Appl. No.:
12/779022
Inventors:
Zhiyuan Ye - Cupertino CA, US
Yihwan Kim - Milpitas CA, US
Xiaowei Li - Sunnyvale CA, US
Ali Zojaji - Santa Clara CA, US
Nicholas C. Dalida - Fremont CA, US
Jinsong Tang - Santa Clara CA, US
Xiao Chen - San Jose CA, US
Arkadii V. Samoilov - Sunnyvale CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/20
H01L 21/36
US Classification:
438478, 438482, 438488, 438719, 438753, 257E31045, 257E29155, 257E23122, 257E21054, 257E21055, 257E21182
Abstract:
In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.

Use Of Cl2 And/Or Hcl During Silicon Epitaxial Film Formation

View page
US Patent:
8586456, Nov 19, 2013
Filed:
May 31, 2011
Appl. No.:
13/149865
Inventors:
Zhiyuan Ye - Cupertino CA, US
Yihwan Kim - Milpitas CA, US
Xiaowei Li - Sunnyvale CA, US
Ali Zojaji - Santa Clara CA, US
Nicholas C. Dalida - Fremont CA, US
Jinsong Tang - Santa Clara CA, US
Xiao Chen - San Jose CA, US
Arkadii V. Samoilov - Sunnyvale CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 16/24
H01L 21/20
H01L 21/36
US Classification:
438488, 438719, 438753, 257E23116, 257E23128, 257E21502, 257E2109
Abstract:
In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.

Integrated Methods For Graphene Formation

View page
US Patent:
20230017035, Jan 19, 2023
Filed:
Jun 20, 2022
Appl. No.:
17/844181
Inventors:
- Santa Clara CA, US
Thai Cheng Chua - Cupertino CA, US
Christian W. Valencia - Alhambra CA, US
Joung Joo Lee - San Jose CA, US
Xianmin Tang - San Jose CA, US
Xiao Chen - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 16/27
C23C 16/56
C23C 16/511
C23C 16/52
Abstract:
A method of forming graphene layers is disclosed. The method includes precleaning the substrate with a plasma formed from an argon- and hydrogen-containing gas, followed by forming a graphene layer by exposing the substrate to a microwave plasma to form a graphene layer on the substrate. The microwave plasma comprises hydrocarbon and hydrogen radicals. The substrate is then cooled. A capping layer may also be formed.

Isbn (Books And Publications)

Yu Liao Ku Zai Wai Yu Jiao Yu Zhong De Ying Yong: Li Lun Yu Shi Jian = Application of Corpora to Foreign Language Education Theory and Practice

View page
Author

Xiao Chen

ISBN #

7536130589

Control profile
Xiao M Chen from San Leandro, CA, age ~53 Get Report