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Wei Zhu Phones & Addresses

  • Whitestone, NY
  • Harrison, NJ
  • Kendall Park, NJ
  • Newark, NJ

Professional Records

Lawyers & Attorneys

Wei Zhu Photo 1

Wei Zhu, Flushing NY - Lawyer

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Address:
Wayne Zhu
4125 Kissena Blvd Ste 112, Flushing, NY 11355
(718) 353-8380 (Office)
Licenses:
New York - Currently registered 2006
Education:
Touro College Law Center
Wei Zhu Photo 2

Wei Zhu

Public records

Vehicle Records

Wei Zhu

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Address:
14207 Oak Ave, Flushing, NY 11355
VIN:
2T2BK1BA7AC006377
Make:
LEXUS
Model:
RX 350
Year:
2010

Resumes

Resumes

Wei Zhu Photo 3

Wei Zhu New York, NY

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Work:
Empire Innovation Program, SUNY College

2007 to 2000
Assistant Professor

Research Infrastructure Support Program (M-RISP)

2007 to 2000
co PI

Neuroscience Research Institute

2003 to 2000
Senior Research Scientist

Empire Innovation Program, SUNY College
Garden City, NY
Jan 2013 to Aug 2014
Adjunct Professor

Poultry Genomic Project at Neuroscience Research Institute

2012 to 2014

Citizens and Science

2013 to Jun 2013

Neuroscience Research Institute

2013 to 2013

Neuroscience Competition

2010 to 2012

Neuroscience Research Institute

2004 to 2012

Mitogenetics
New York, NY
Feb 2011 to Feb 2011

Intel Science Talent Search Finalists

2007 to 2011
High School Student Science Research Supervisor

Plant Bioactive Chemicals, Cell Dynamic Inc

2004 to 2009

SUNY Research Foundation

2003 to 2005
Young Scientist Research Fellowship, Catholic University of Leuven

International Development Fellowship

1995 to 1995

Education:
School of Education
May 2014
M.S.

Harvard University
2002

Catholic University of Leuven
1999
Ph.D. in Biology

Catholic University of Leuven
1995
M.S. in Biology

Chinese Agriculture University
1992
B.S. in Entomology

Wei Zhu Photo 4

Wei Zhu Brooklyn, NY

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Work:
SOCIETE GENERALE
New York, NY
May 2007 to Sep 2014
Senior Fixed Income Application Support

Asset Inventories - SOCIETE GENERALE
New York, NY
2007 to 2010
Trade Support/ NT Systems Analyst

Education:
NYU Polytechnic School of Engineering
New York, NY
2008
BACHELOR OF SCIENCE in Computer Engineering

Wei Zhu Photo 5

Wei Zhu Basking Ridge, NJ

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Work:
Goldman Sachs, Investment Research
New York, NY
Mar 2011 to Jul 2014
Consultant

Liquid Capital Management, Hedge Fund
New York, NY
Jan 2009 to Dec 2010
Investment Consultant

Lehman Brothers, Finance
New York, NY
Jan 2008 to Nov 2008
Associate

The Transportation Group
New York, NY
Jan 2005 to Nov 2007
IBD Associate

Blaylock & Partners
New York, NY
Jun 2004 to Oct 2004
IBD Analyst

Education:
Columbia University
New York, NY
2002 to 2004
MA in Quantitative Methods in the Social Sciences

The Chinese University of Hong Kong
Hong Kong, Hong Kong Island
Jun 2002
BA in Economics

Wei Zhu Photo 6

Wei Zhu San Jose, CA

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Work:
Huawei North America

Feb 2011 to Present
Intern

Wuhan HD Information Technology Co. Ltd

May 2010 to Aug 2010

Encryption Software

Mar 2010 to Jun 2010

GCJ

Mar 2010 to May 2010
Windows Service Installer

Central China Normal University, China

Jan 2007 to Jan 2008
Webmaster

Education:
New Jersey Institute of Technology
Newark, NJ
Sep 2009 to Dec 2010
M.S in Computer Science

Business Records

Name / Title
Company / Classification
Phones & Addresses
Wei Feng Zhu
TNS AUTO COLLISION, INC
1572 63 St, Brooklyn, NY 11219
232 A Bruckner, Staten Island, NY 10303
Wei Qiang Zhu
JIEDA INC
153 Ctr St, New York, NY 10013
1946 W 5 St, Brooklyn, NY 11223
6602 14 Ave, Brooklyn, NY 11219
Wei Fang Zhu
PRETTY ANGEL BODYWORK INC
88-50 179 St 5K, Jamaica, NY 11432
404 E 63 St, New York, NY 10065
Wei Z. Zhu
Principal
Zhu Wei
Medical Doctor's Office
24924 63 Ave, Flushing, NY 11362
Wei Zhu
Principal
Wei Zhu
Medical Doctor's Office
4237 Un St, Flushing, NY 11355
Wei F. Zhu
Chairman
RAPID AUTO BODY INC
Auto Body Repair/Painting
1572 63 St, Brooklyn, NY 11219
Wei Zhu
Wyndar Limited Liability Company
Mfg Process Control Instruments
402 Main St, Metuchen, NJ 08840
Wei Feng Zhu
T & S AUTO COLLISION, INC
5310 3 Ave, Brooklyn, NY 11220
232A Bruckner Ave, Staten Island, NY 10303

Publications

Isbn (Books And Publications)

Vacuum Microelectronics

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Author

Wei Zhu

ISBN #

0471224332

Vacuum Microelectronics

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Author

Wei Zhu

ISBN #

0471464090

Amazon

Vacuum Microelectronics

Vacuum Microelectronics

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Expert coverage of vacuum microelectronics-principles, devices, and applications The field of vacuum microelectronics has advanced so swiftly that commercial devices are being fabricated, and applications are being developed in displays, wireless communications, spacecraft, and electronics for use i...

Binding

Hardcover

Pages

408

Publisher

Wiley-Interscience

ISBN #

047132244X

EAN Code

9780471322443

ISBN #

4

The Magic Of Thinking Big(Chinese Edition)

The magic of thinking big(Chinese Edition)

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Author

(MEI )DA WEI ? SHU WA CI ZHU LAI WEI XIONG YI

Binding

Paperback

Publisher

big magical thinking World Knowledge Press.

ISBN #

7501234493

EAN Code

9787501234493

ISBN #

1

Sub-Health Caused By Spinal Cord Injury--- Chinese Traditinal Medicine Therapy (Chinese Edition)

Sub-health caused by spinal cord injury--- Chinese Traditinal Medicine Therapy (Chinese Edition)

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It advocates a new concept of sub-health caused by spinal cord injury, giving a brief introduction of the sub-health. As a leading authority in the field of spinal cord, the author introduced a systematic treatment of acupuncture and acupressure, as well as recuperation of traditional Chinese medici...

Author

gao wei zhu

Binding

Paperback

Pages

432

Publisher

Guangxi Normal University Press

ISBN #

7563397868

EAN Code

9787563397860

ISBN #

9

Language Learning And Teaching As Social Interaction

Language Learning and Teaching as Social Interaction

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This volume brings together contributions by leading researchers active in developing the social interactional and socio-cultural approaches to language learning and teaching. It provides not only an introduction to this important growth point, but also an overview of cutting edge research, covering...

Binding

Hardcover

Pages

320

Publisher

Palgrave Macmillan

ISBN #

0230517005

EAN Code

9780230517004

ISBN #

5

English-Chinese Simultaneous Interpretation

English-Chinese Simultaneous Interpretation

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The Chinese Ministry of Education approved in 2005 to set translation majors for undergraduates, providing a new opportunity for the construction and development of translation disciplines. This book is written on the basis of extensive research to suppor

Author

zhang wei wei bian zhu

Binding

Paperback

Pages

225

Publisher

Shanghai Foreign Language Education Press

ISBN #

7544620670

EAN Code

9787544620673

ISBN #

7

Handbook On Classroom Skills For International Chinese Teachers (Chinese Edition)

Handbook on Classroom Skills for International Chinese Teachers (Chinese Edition)

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The book applies to the international Chinese teachers, volunteer teachers, undergraduate and graduate students who major in International Chinese Education. It can be used in teaching International Chinese Education as the major area, vocational training

Author

wang wei deng zhu

Binding

Paperback

Pages

262

Publisher

Higher Education Press

ISBN #

7040306549

EAN Code

9787040306545

ISBN #

3

Cai Guoqiang: What I Am Thinking About (Chinese Edition)

CAI GUOQIANG: WHAT I AM THINKING ABOUT (Chinese Edition)

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This book is the first and comprehensive introduction of artist Cai Guoqiang , except the independent but not lonely road of searching for art, it also a coreduction of him to be a husband and a father.

Author

Yang Zhao. Li Wei Jing. Zhu

Binding

Paperback

Pages

345

Publisher

Guangxi Normal University Press

ISBN #

756339818X

EAN Code

9787563398188

ISBN #

10

Us Patents

Article Comprising Vertically Nano-Interconnected Circuit Devices And Method For Making The Same

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US Patent:
6340822, Jan 22, 2002
Filed:
Oct 5, 1999
Appl. No.:
09/426457
Inventors:
Walter L. Brown - Berkeley Heights NJ
Sungho Jin - Millington NJ
Wei Zhu - Warren NJ
Assignee:
Agere Systems Guardian Corp. - Orlando FL
International Classification:
H01L 2906
US Classification:
257 25, 257777
Abstract:
A circuit device is disclosed comprising at least two circuit layers or circuit devices vertically interconnected with a plurality of parallel and substantially equi-length nanowires disposed therebetween. The nanowires may comprise composites, e. g. , having a heterojunction present along the length thereof, to provide for a variety of device applications. Also disclosed is a method for making the circuit device comprising growing a plurality of nanowires on a dissolvable or removable substrate, equalizing the length of the nanowires (e. g. , so that each one of the plurality of nanowires is substantially equal in length), transferring and bonding exposed ends of the plurality of nanowires to a first circuit layer; and removing the dissolvable substrate. The nanowires attached to the first circuit layer then can be further bonded to a second circuit layer to provide the vertically interconnected circuit device.

Article Comprising Vertically Nano-Interconnected Circuit Devices And Method For Making The Same

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US Patent:
6383923, May 7, 2002
Filed:
Aug 22, 2000
Appl. No.:
09/643784
Inventors:
Walter L. Brown - Berkeley Heights NJ
Sungho Jin - Millington NJ
Wei Zhu - Warren NJ
Assignee:
Agere Systems Guardian Corp. - Orlando FL
International Classification:
H01L 2144
US Classification:
438666, 438734, 438962
Abstract:
A circuit device is disclosed comprising at least two circuit layers or circuit devices vertically interconnected with a plurality of parallel and substantially equi-length nanowires disposed therebetween. The nanowires may comprise composites, e. g. , having a heterojunction present along the length thereof, to provide for a variety of device applications. Also disclosed is a method for making the circuit device comprising growing a plurality of nanowires on a dissolvable or removable substrate, equalizing the length of the nanowires (e. g. , so that each one of the plurality of nanowires is substantially equal in length), transferring and bonding exposed ends of the plurality of nanowires to a first circuit layer; and removing the dissolvable substrate. The nanowires attached to the first circuit layer then can be further bonded to a second circuit layer to provide the vertically interconnected circuit device.

Device Comprising Thermally Stable, Low Dielectric Constant Material

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US Patent:
6469390, Oct 22, 2002
Filed:
Apr 21, 1999
Appl. No.:
09/296001
Inventors:
Kin Ping Cheung - Hoboken NJ
Chien-Shing Pai - Bridgewater NJ
Wei Zhu - Warren NJ
Assignee:
Agere Systems Guardian Corp. - Orlando FL
International Classification:
H01L 2348
US Classification:
257758, 257752, 257759, 257642, 257637
Abstract:
It has been discovered that for semiconductor devices such as MOSFETs, there is significant capacitive coupling in the front-end structure, i. e. , the structure from and including the device substrate up to the first metal interconnect level. The invention therefore provides a device comprising a silicon substrate, an isolation structure in the substrate (e. g. , shallow trench isolation), an active device structure (e. g. , a transistor structure), a dielectric layer over the active device structure, and a metal interconnect layer over the dielectric layer (metal-1 level). At least one of the dielectric components of the front-end structure comprise a material exhibiting a dielectric constant less than 3. 5. This relatively low dielectric constant material reduces capacitive coupling in the front-end structure, thereby providing improved properties in the device.

Field Emitting Device Comprising Metallized Nanostructures And Method For Making The Same

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US Patent:
6504292, Jan 7, 2003
Filed:
Jul 30, 1999
Appl. No.:
09/365059
Inventors:
Kyung Moon Choi - Scotch Plains NJ
Sungho Jin - Millington NJ
Gregory Peter Kochanski - Dunellen NJ
Wei Zhu - Warren NJ
Assignee:
Agere Systems Inc. - Allentown PA
International Classification:
H01J 113
US Classification:
313310, 313309, 313311, 313326, 313336, 313351, 313346 R
Abstract:
In accordance with the invention, an improved conductive nanostructure assembly comprises an array of metallized nanostructures disposed on a conductive substrate. The substrate can also be metallized. Such assemblies provide continuous electron transport from the substrate to the tips of the nanostructures. Several ways of making such assemblies are described along with several devices employing the assemblies.

Field Emitting Device Comprising Field-Concentrating Nanoconductor Assembly And Method For Making The Same

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US Patent:
6538367, Mar 25, 2003
Filed:
Aug 6, 1999
Appl. No.:
09/369802
Inventors:
Kyung Moon Choi - Scotch Plains NJ
Sungho Jin - Millington NJ
Gregory Peter Kochanski - Dunellen NJ
Wei Zhu - Warren NJ
Assignee:
Agere Systems Inc. - Allentown PA
International Classification:
H01J 102
US Classification:
313309, 313495, 313308
Abstract:
This invention is predicated on applicants discovery that a highly oriented nanoconductor structure alone does not guarantee efficient field emission. To the contrary, the conventional densely populated, highly oriented structures actually yield relatively poor field emission characteristics. Applicants have determined that the individual nanoconductors in conventional assemblies are so closely spaced that they shield each other from effective field concentration at the ends, thus diminishing the driving force for efficient electron emission. In accordance with the invention, an improved field emitting nanoconductors assembly (a âlow density nanoconductor assemblyâ) comprises an array of nanoconductors which are highly aligned but spaced from each other no closer than 10% of the height of the nanoconductors. In this way, the field strength at the ends will be at least 50% of the maximal field concentration possible. Several ways of making the optimally low density assemblies are described along with several devices employing the assemblies.

Article Comprising Aligned Nanowires

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US Patent:
6741019, May 25, 2004
Filed:
Oct 18, 1999
Appl. No.:
09/420157
Inventors:
Robert William Filas - Bridgewater NJ
Sungho Jin - Millington NJ
Gregory Peter Kochanski - Dunellen NJ
Wei Zhu - Warren NJ
Assignee:
Agere Systems, Inc. - Allentown PA
International Classification:
H01J 130
US Classification:
313355, 313309, 313311, 313351, 313495, 445 24
Abstract:
An improved process for fabricating emitter structures from nanowires, wherein the nanowires are coated with a magnetic material to allow useful alignment of the wires in the emitter array, and techniques are utilized to provide desirable protrusion of the aligned nanowires in the final structure. In one embodiment, nanowires at least partially coated by a magnetic material are provided, the nanowires having an average length of about 0. 1 m to about 10,000 m. The nanowires are mixed in a liquid medium, and a magnetic field is applied to align the nanowires. The liquid medium is provided with a precursor material capable of consolidation into a solid matrix, e. g. , conductive particles or a metal salt, the matrix securing the nanowires in an aligned orientation. A portion of the aligned nanowires are exposed, e. g. , by etching a surface portion of the matrix material, to provide desirable nanowire tip protrusion.

Cathode With Improved Work Function And Method For Making The Same

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US Patent:
6815876, Nov 9, 2004
Filed:
Jun 23, 1999
Appl. No.:
09/338520
Inventors:
Sungho Jin - Millington NJ
Victor Katsap - Belle Mead NJ
Warren K. Waskiewicz - Clinton NJ
Wei Zhu - Warren NJ
Assignee:
Agere Systems Inc. - Allentown PA
International Classification:
H01J 120
US Classification:
313310, 313346 DC, 313349, 313337
Abstract:
A cathode with an improved work function, for use in a lithographic system, such as the SCALPELâ system, which includes a buffer between a substrate and an emissive layer, where the buffer alters, randomizes, miniaturizes, and/or isolates the grain structure at a surface of the substrate to reduce the grain size, randomize crystal orientation and reduce the rate of crystal growth. The buffer layer may be a solid solution or a multiphase alloy. A method of making the cathode by depositing a buffer between a surface of the substrate and an emissive layer, where the deposited buffer alters, randomizes, miniaturizes, and/or isolates the grain structure at a surface of the substrate to reduce the grain size, randomize crystal orientation and reduce the rate of crystal growth.

Electro-Mechanical Device Having A Charge Dissipation Layer And A Method Of Manufacture Therefor

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US Patent:
6869815, Mar 22, 2005
Filed:
Aug 22, 2002
Appl. No.:
10/226930
Inventors:
Arman Gasparyan - New Providence NJ, US
Sungho Jin - San Diego CA, US
Herbert R. Shea - Washington Township NJ, US
Robert B. Van Dover - Maplewood NJ, US
Wei Zhu - Warren NJ, US
Assignee:
Agere Systems Inc. - Allentown PA
International Classification:
H01L021/00
US Classification:
438 29, 438 69, 438 78
Abstract:
The present invention provides a micro-electro-mechanical system (MEMS) device, a method of manufacture therefore, and an optical communications system including the same. The device includes an electrode located over a substrate and a charge dissipation layer located proximate and electrically coupled to the substrate. The device may further include a moveable element located over the electrode.
Wei Zhu from Whitestone, NY, age ~60 Get Report