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Wei N Liu

from San Leandro, CA
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Also known as:
Wei N Lin, Weina Liu
Related to:
Yue Fai Lai, 71Hong Li, 62Brian Lin, 60Li Fun Kao, 78Lili LiuHong Y Lin, 59Rui Liu, 60Hong L LinBenjamin Cheung
Connected to:
Adela Liu, 73Alec X Liu, 39Alpha T Liu, 46Amon Y Liu, 58Andrea Y Liu, 46Anqi Liu, 39Arden K Liu, 64Ba S Liu, 62Bailu Liu, 35Ban Liu, 48

Wei Liu Phones & Addresses

  • San Leandro, CA
  • Alameda, CA
  • Fremont, CA
  • Union City, CA
  • Castro Valley, CA

Professional Records

Real Estate Brokers

Wei Liu Photo 1

Wei Liu, St Louia MO

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Specialties:
Buyer's Agent
Listing Agent
Work:
WTrealty
Po Box 8811, St Louis Mo 63124
(314) 662-1698 (Office)

License Records

Wei Liu

License #:
129 - Active
Category:
Dietetics and Nutrition Practice
Issued Date:
May 14, 1996
Renew Date:
Dec 1, 2016
Expiration Date:
Nov 30, 2017
Type:
Nutritionist

Wei Liu

License #:
32378 - Active
Issued Date:
Sep 5, 2014
Renew Date:
Dec 1, 2015
Expiration Date:
Nov 30, 2017
Type:
Certified Public Accountant

Wei Liu

License #:
19003 - Active
Category:
Architect
Issued Date:
Apr 7, 2005
Expiration Date:
Mar 31, 2017
Organization:
Firm Not Published

Wei Liu

License #:
08266 - Expired
Category:
Accountants
Type:
Certified Public Accountant

Wei Liu

License #:
08266 - Active
Category:
Accountants
Issued Date:
Jan 20, 2017
Expiration Date:
Jun 30, 2018
Type:
Certified Public Accountant

Medicine Doctors

Wei Liu Photo 2

Wei Liu

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Specialties:
Neurology, Vascular
Work:
University Of Louisville PhysiciansUniversity Of Louisville Physicians Neurology
401 E Chestnut St UNIT 510, Louisville, KY 40202
(502) 589-0802 (phone), (502) 589-0805 (fax)
Education:
Medical School
Shanghai Med Univ, Shanghai First Med Univ, Shanghai, China
Graduated: 1990
Procedures:
Sleep and EEG Testing
Conditions:
Hemorrhagic stroke
Ischemic Stroke
Acute Myocardial Infarction (AMI)
Acute Renal Failure
Alzheimer's Disease
Languages:
English
Spanish
Description:
Dr. Liu graduated from the Shanghai Med Univ, Shanghai First Med Univ, Shanghai, China in 1990. He works in Louisville, KY and specializes in Neurology, Vascular. Dr. Liu is affiliated with Jewish Hospital and University Of Louisville Hospital.
Wei Liu Photo 3

Wei Liu

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Specialties:
Internal Medicine
Work:
Wei Liu MD
8303 Arlington Blvd STE 203, Fairfax, VA 22031
(703) 208-1998 (phone)
Education:
Medical School
Beijing Med Univ, Beijing City, Beijing, China
Graduated: 1991
Procedures:
Electrocardiogram (EKG or ECG)
Vaccine Administration
Conditions:
Abnormal Vaginal Bleeding
Anemia
Cardiac Arrhythmia
Contact Dermatitis
Esophagitis
Languages:
Chinese
English
Description:
Dr. Liu graduated from the Beijing Med Univ, Beijing City, Beijing, China in 1991. She works in Fairfax, VA and specializes in Internal Medicine.
Wei Liu Photo 4

Wei Liu

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Specialties:
Anesthesiology
Work:
Gulf Anesthesia
5445 Ln Br St, Houston, TX 77004
(713) 528-6800 (phone), (713) 522-4251 (fax)
Education:
Medical School
Shanghai Second Med Univ, Shanghai City, Shanghai, China
Graduated: 1982
Languages:
English
Spanish
Description:
Dr. Liu graduated from the Shanghai Second Med Univ, Shanghai City, Shanghai, China in 1982. He works in Houston, TX and specializes in Anesthesiology. Dr. Liu is affiliated with Houston Hospital For Specialized Surgery.
Wei Liu Photo 5

Wei Liu

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Specialties:
Anatomic Pathology & Clinical Pathology
Work:
Peoria Tazwell Pathology GroupPeoria Tazewell Pathology Group
5409 N Knoxville Ave, Peoria, IL 61614
(866) 759-4528 (phone), (309) 272-0812 (fax)

Peoria Tazwell Pathology Group
221 NE Gln Oak Ave, Peoria, IL 61636
(309) 672-4918 (phone), (309) 672-5919 (fax)

Ameripathpathology
1907 W Sycamore St, Kokomo, IN 46901
(765) 456-5729 (phone), (765) 456-5014 (fax)
Education:
Medical School
Shandong Med Univ, Jinan, Shandong, China (242 46 Prior 1 1 71)
Graduated: 1994
Languages:
English
Description:
Dr. Liu graduated from the Shandong Med Univ, Jinan, Shandong, China (242 46 Prior 1 1 71) in 1994. She works in Peoria, IL and 2 other locations and specializes in Anatomic Pathology & Clinical Pathology. Dr. Liu is affiliated with Community Howard Specialty Hospital, Galesburg Cottage Hospital, Pekin Hospital, Saint Vincent Kokomo, UnityPoint Health Methodist Hospital and Unitypoint
Wei Liu Photo 6

Wei Liu

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Wei Liu Photo 7

Wei Liu

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Specialties:
Internal Medicine
Education:
Beijing School Of Medicine (1990) *
New York University - Mount Sinai (2002) *Internal Medicine

Lawyers & Attorneys

Wei Liu Photo 8

Wei Liu - Lawyer

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Licenses:
New York - Currently registered 2011
Education:
University of Pennsylvania Law School
Wei Liu Photo 9

Wei Liu - Lawyer

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Address:
Freshfields Bruckhaus Deringer LLP, Beijing Representative Office
(381) 174-1906 (Office)
Licenses:
New York - Currently registered 2013
Education:
Peking University Law School

Resumes

Resumes

Wei Liu Photo 10

Wei Liu San Jose, CA

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Work:
Atherton Healthcare

May 2012 to 2000
San Francisco Health Care &Rehab
San Francisco, CA
Feb 2011 to May 2012
Sequoia Hospital, UCSF, Stanford Hospital
San Jose, CA
Mar 2009 to May 2010
Examiner
Sequoia Hospital, UCSF, Stanford Hospital

2008 to 2010
Nursing Student's internship
Kaiser Hospital
San Jose, CA
Dec 2007 to Mar 2009
Examiner
Volunteer
Jun 2006 to Jun 2007
Kaiser Hospital
Santa Clara, CA
Dec 2006 to Jan 2007
Phlebotomy externship-660 draws
Education:
San Francisco State University
May 2010
Bachelor of Science in Nursing
De Anza College
Cupertino, CA
Jun 2006
Associate in Art
Wei Liu Photo 11

Wei Liu

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Work:
wt realty
St. Louis, MO
broker
Wei Liu Photo 12

Wei Liu San Lorenzo

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Work:
Zazzel

May 2012 to 2000
Freelance Soft Good Designer
Living Focus Interior Studio

Mar 2012 to 2000
Freelance Interior Designer
Chao's Construction

2009 to 2010
Internship Interior Designer
Gary D Nelson Associates Inc
Hayward, CA
2004 to Dec 2006
Organizer
CHOI AND NG CAF
Oakland, CA
Aug 2003 to Jul 2005
Cashier
Long Fong
Hong Kong, Hong Kong Island
1999 to 2003
Part-time Interior Designer
Education:
University of Davis
Sacramento, CA
2009 to 2012
BA in Design in Furniture, Interior, and Graphic
Laney College
Oakland, CA
2007 to 2009
A.A. in Interior Architecture

Business Records

Name / Title
Company / Classification
Phones & Addresses
Wei Liu
President
Qiao Ji Mandarin
2567 22 Ave, San Francisco, CA 94116
Wei C. Liu
President
Meca Technology Inc
Whol Computers/Peripherals
800 Charcot Ave, San Jose, CA 95131
(408) 383-0616
Wei Ting Liu
President
Peeridea, Inc
934 Ln Mesa Ter, Sunnyvale, CA 94086
Wei Liu
President
CHINAMERICA RESTAURANT GROUP CORPORATION
640 Jackson St, San Francisco, CA 94133
870 Market St, San Francisco, CA 94102
Wei Hong Liu
President
H & B, INC
4115 Judah St, San Francisco, CA 94122
Wei Liu
President
N.E. STONE CORP
225 Raymond Ave, San Francisco, CA 94134
Wei Liu
Director Information Technology
Sf Coordinating Center
Architectural Services
185 Berry St, San Francisco, CA 94107
Wei Liu
ASCENDING REAL ESTATE, LLC

Publications

Isbn (Books And Publications)

TCP/IP Tutorial and Technical Overview

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Author

Wei Liu

ISBN #

0738494682

Zhonghua Wen Ming Chuan Zhen: Chinese Civilization in a New Light

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Author

Wei Liu

ISBN #

7532608522

Zhuan Gui Zhong De Jing Ji Zeng Zhang Yu Jing Ji Jie Gou: Economic Growth and Structure in Transitive Economy

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Author

Wei Liu

ISBN #

7800877884

Us Patents

Silicon Trench Etch Using Silicon-Containing Precursors To Reduce Or Avoid Mask Erosion

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US Patent:
6380095, Apr 30, 2002
Filed:
Nov 16, 2000
Appl. No.:
09/716074
Inventors:
Wei Liu - Sunnyvale CA
Yiqiong Wang - Morgan Hill CA
Maocheng Li - Fremont CA
Anisul Khan - Sunnyvale CA
Dragan Podlesnik - Palo Alto CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21302
US Classification:
438719, 438700, 438701, 438710, 438711
Abstract:
The present invention pertains to an etch chemistry and method useful for the etching of silicon surfaces. The method is particularly useful in the deep trench etching of silicon where profile control is important. In the case of deep trench etching, at least a portion of the substrate toward the bottom of the trench is etched using a combination of reactive gases including a fluorine-containing compound which does not contain silicon (FC); a silicon-containing compound (SC) which does not contain fluorine; and oxygen (O ).

Method Of Providing A Shallow Trench In A Deep-Trench Device

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US Patent:
6458671, Oct 1, 2002
Filed:
Feb 16, 2001
Appl. No.:
09/784997
Inventors:
Wei Liu - Sunnyvale CA
David Mui - San Jose CA
Assignee:
Applied Materials Inc. - Santa Clara CA
International Classification:
H01L 2120
US Classification:
438391, 438248, 438424, 438734
Abstract:
A method of forming a shallow trench within a trench capacitor structure. This method can be used, for example, in the construction of a DRAM device. The method comprises: (1) providing a trench capacitor structure comprising (a) a silicon substrate having an upper and a lower surface; (b) first and second trenches extending from the upper surface into the silicon substrate; (c) first and second oxide regions lining at least portions of the first and second trenches; and (d) first and second polysilicon regions at least partially filling the oxide lined first and second trenches; and (2) forming a shallow trench from an upper surface of the structure, the shallow trench having a substantially flat trench bottom that forms an interface with portions of the silicon substrate, the first oxide region, the second oxide region, the first polysilicon region and the second polysilicon region, the shallow trench being formed by a process comprising (a) a first plasma etching step having an oxide:silicon:polysilicon selectivity of 1:1:1 and (b) a second plasma etching step having an oxide:silicon:polysilicon selectivity of 1:1:1, more preferably 1. 3:1:1.

Metal Mask Etching Of Silicon

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US Patent:
6491835, Dec 10, 2002
Filed:
Dec 20, 1999
Appl. No.:
09/467560
Inventors:
Ajay Kumar - Sunnyvale CA
Anisul Khan - Sunnyvale CA
Wei Liu - Sunnyvale CA
John Chao - San Jose CA
Jeff Chinn - Foster City CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 2100
US Classification:
216 51, 216 41, 216 79, 438717, 438719, 438736, 438738
Abstract:
The present disclosure provides a method for etching trenches, contact vias, or similar features to a depth of 100 m and greater while permitting control of the etch profile (the shape of the sidewalls surrounding the etched opening). The method requires the use of a metal-comprising masking material in combination with a fluorine-comprising plasma etchant. The byproduct produced by a combination of the metal with reactive fluorine species must be essentially non-volatile under etch process conditions, and sufficiently non-corrosive to features on the substrate being etched, that the substrate remains unharmed by the etch process. Although aluminum is a preferred metal for the metal-comprising mask, other metals can be used for the masking material, so long as they produce an essentially non-volatile, non-corrosive etch byproduct under etch process conditions. By way of example, and not by way of limitation, metallic materials recommended for the mask include aluminum, cadmium, copper, chromium, gallium, indium, iron, magnesium, manganese, nickel, and combinations thereof. In particular, aluminum in combination with copper or magnesium is particularly useful, where the copper or magnesium content is less than about 8% by weight, and other constituents total less than about 2% by weight.

Integration Of Silicon Etch And Chamber Cleaning Processes

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US Patent:
6566270, May 20, 2003
Filed:
Sep 15, 2000
Appl. No.:
09/662677
Inventors:
Wei Liu - San Jose CA
Scott Williams - Sunnyvale CA
Stephen Yuen - Santa Clara CA
David Mui - San Jose CA
Meihua Shen - Fremont CA
Assignee:
Applied Materials Inc. - Santa Clara CA
International Classification:
H01L 21302
US Classification:
438706, 438714, 438719, 134 11, 134 12
Abstract:
A method for processing a substrate disposed in a substrate process chamber having a source power includes transferring the substrate into the substrate process chamber. A trench is etched on the substrate by exposing the substrate to a plasma formed from a first etchant gas by applying RF energy from the source power system and biasing the plasma toward the substrate. Byproducts adhering to inner surfaces of the substrate process chamber are removed by igniting a plasma formed from a second etchant gas including a halogen source in the substrate process chamber without applying bias power or applying minimal bias power. Thereafter, the substrate is removed from the chamber. At least 100 more substrates are processed with the etching-a-trench step and removing-etch-byproducts step before performing a dry clean or wet clean operation on the chamber.

Velocity Analysis Using Angle-Domain Common Image Gathers

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US Patent:
6546339, Apr 8, 2003
Filed:
Jun 8, 2001
Appl. No.:
09/877133
Inventors:
Dimitri Bevc - Pleasanton CA
Wei Liu - San Jose CA
Alexander M. Popovici - Portola Valley CA
Assignee:
3D Geo Development, Inc. - Mountain View CA
International Classification:
G01V 128
US Classification:
702 18
Abstract:
Migration velocity analysis is performed using Angle-Domain Common Image Gathers (ACIGs). When the correct velocity model is employed for migration, all ACIG events corresponding to a subsurface location are aligned along a horizontal line. Residual moveout can be performed on each ACIG with a suite of trial residual velocity values, according to an angle-domain residual moveout equation. A best-fit residual velocity value that leads to horizontally-aligned events upon moveout can be selected by generating a distribution of semblance (amplitude summed over a given depth) over residual velocity. Best-fit residual velocity values corresponding to selected subsurface points can be employed to update the initial velocity model using a vertical update, normal ray update, or tomographic update method.

Nitride Open Etch Process Based On Trifluoromethane And Sulfur Hexafluoride

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US Patent:
6589879, Jul 8, 2003
Filed:
Jan 18, 2001
Appl. No.:
09/766187
Inventors:
Scott M. Williams - Sunnyvale CA
Wei Liu - Sunnyvale CA
David Mui - San Jose CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21302
US Classification:
438714, 438719, 438723, 438724
Abstract:
A nitride etch process particularly useful when integrated with a silicon trench etch needing a sloping silicon surface adjacent to the interface between the silicon and an oxide layer intermediate the silicon and nitride. The nitride etch process is a plasma process having an etching gas mixture of sulfur hexafluoride (SF ) and trifluoromethane (CHF ) although nitrogen or oxygen may be added for additional controls. The trifluoromethane is believed to create a polymer passivation on the sidewalls of the hole being etched which, when the etch reaches the oxide-silicon interface, protects the interface and underlying silicon. The nitride etch may proceed through the oxide or a separate fluorocarbon-based oxide etching step may be performed before a bromine-based etch of the silicon starts.

Integrated Shallow Trench Isolation Approach

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US Patent:
6677242, Jan 13, 2004
Filed:
Aug 12, 2000
Appl. No.:
09/637838
Inventors:
Wei Liu - San Jose CA
Scott Williams - Sunnyvale CA
Stephen Yuen - Santa Clara CA
David Mui - San Jose CA
Assignee:
Applied Materials Inc. - Santa Clara CA
International Classification:
H01L 21302
US Classification:
438706, 438714, 438719, 134 11, 134 12
Abstract:
A method for processing a silicon substrate disposed in a substrate process chamber includes transferring the substrate into the substrate process chamber. The substrate having a hard mask formed thereon and a patterned photoresist overlying the hard mask to expose portions of the hard mask. The chamber being the type having a source power system and a bias power system. The method further includes etching the exposed portions of the hard mask to expose portions of the silicon substrate underlying the hard mask. Thereafter, the patterned photoresist is exposed to a first plasma formed from a first process gas to remove the photoresist from the hard mask. Thereafter, the exposed silicon substrate is etched by exposing the substrate to a second plasma formed from a second process gas by applying RF energy from the source power system and biasing the plasma toward the substrate. The substrate is transferred out of the substrate processing chamber.

Typing Picks To Horizons In Migration Velocity Analysis

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US Patent:
6687618, Feb 3, 2004
Filed:
Aug 7, 2001
Appl. No.:
09/924123
Inventors:
Dimitri Bevc - Pleasanton CA
Alexander M. Popovici - Portola Valley CA
Wei Liu - San Jose CA
Assignee:
3D Geo Development, Inc. - Santa Clara CA
International Classification:
G01V 128
US Classification:
702 14, 702 18
Abstract:
A seismic velocity analysis method includes tying velocity parameter values such as residual velocity values to geological horizons (reflectors) within a seismic exploration volume. Common image gathers (CIGs) such a common reflection point (CRP) gathers or angle-domain common image gathers (ACIGs) are generated for a set of CIG grid points. Computed best-fit residual velocity values are then snapped to a neighboring horizon or vertically interpolated to the horizon, to generate residual velocity values along the horizon. The residual velocity values for points along the horizon are then selectively employed in updating the velocity model for the volume of interest.

Amazon

Simultaneous Inference In Regression (Chapman & Hall/Crc Monographs On Statistics & Applied Probability)

Simultaneous Inference in Regression (Chapman & Hall/CRC Monographs on Statistics & Applied Probability)

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Simultaneous confidence bands enable more intuitive and detailed inference of regression analysis than the standard inferential methods of parameter estimation and hypothesis testing. Simultaneous Inference in Regression provides a thorough overview of the construction methods and applications of si...
Author

Wei Liu

Binding

Hardcover

Pages

292

Publisher

CRC Press

ISBN #

1439828091

EAN Code

9781439828090

ISBN #

16

Wideband Beamforming: Concepts And Techniques

Wideband Beamforming: Concepts and Techniques

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This book provides an excellent reference for all professionals working in the area of array signal processing and its applications in wireless communications. Wideband beamforming has advanced with the increasing bandwidth in wireless communications and the development of ultra wideband (UWB) tec...
Author

Wei Liu, Stephan Weiss

Binding

Hardcover

Pages

302

Publisher

Wiley

ISBN #

0470713925

EAN Code

9780470713921

ISBN #

15

Harvard Girl-Liu Yiting-Documentary On Quality Training (Chinese Edition)

Harvard Girl-Liu Yiting-Documentary on Quality Training (Chinese Edition)

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Starting from the inspiration to the interests of kids and gradually implementing beneficial measure on the precondition of willing acceptation of the kids is really the effective way to improve the quality of kids. The methods of forcible execution and over-anxiously helping kids to grow will affec...
Author

liu wei hua zhang xin wu

Binding

Paperback

Pages

299

Publisher

Writers Publishing House

ISBN #

750631942X

EAN Code

9787506319423

ISBN #

13

Transradial Approach For Percutaneous Interventions

Transradial Approach for Percutaneous Interventions

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This book outlines the state of the art in transradial intervention and illustrates case-based learning for the transradial access (TR access) technique, especially in complex lesions. Offering a practical guide, it includes essential tips and tricks on how to overcome anatomical complexities, how t...
Binding

Hardcover

Pages

279

Publisher

Springer

ISBN #

9401773491

EAN Code

9789401773492

ISBN #

12

A New Reading Of Records Of The Grand Historian (Volume Ii) (Chinese Edition)

A New Reading of Records of the Grand Historian (Volume II) (Chinese Edition)

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his book is not only a magnum opus of the science of history, but also a landmark in the history of literature. It creates a plethorea of characters with larger-than-life personalities based on various styles of art and a wealth of historical materials. Sima Qian goes to great lengths to integrate h...
Author

Liu Wei Zheng Lin

Binding

Kindle Edition

Pages

327

Publisher

YBWXX

ISBN #

17

Stochastic Partial Differential Equations: An Introduction (Universitext)

Stochastic Partial Differential Equations: An Introduction (Universitext)

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This book provides an introduction to the theory of stochastic partial differential equations (SPDEs) of evolutionary type. SPDEs are one of the main research directions in probability theory with several wide ranging applications. Many types of dynamics with stochastic influence in nature or man-ma...
Author

Wei Liu, Michael Röckner

Binding

Paperback

Pages

266

Publisher

Springer

ISBN #

3319223534

EAN Code

9783319223537

ISBN #

14

Johann's Awakening

Johann's Awakening

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At the dawning of the Age of Aquarius, young Jonathan Livingston Seagull caught the world’s notice as he sought to break beyond the pitiful life of those average mortals populating the earth. Conquering all, entering into the eternal bliss, Jonathan left us, as did this magical spiritual age of enli...
Author

Arthur Telling

Binding

Kindle Edition

Pages

58

ISBN #

11

Liu Wei: Trilogy

Liu Wei: Trilogy

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Considered one of China's foremost artists, Liu Wei (born 1972) uses performance, sculpture, photography, video and installation to explore themes of late capitalist excess and the anxieties of cultural identity. This latest monograph is the catalogue for the artist's most ambitious exhibition to da...
Author

Guo Xiaoyan, Gunnar Kvaran

Binding

Hardcover

Pages

128

Publisher

Charta / Long March Space

ISBN #

8881588293

EAN Code

9788881588299

ISBN #

3

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Wei N Liu from San Leandro, CA Get Report