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Wei A Jin

from Newark, CA
Age ~56
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Also known as:
Wei Q Jin, Weiqing Jin, Jin Weiqing, Wei Q J Gao, Jian Jin
Related to:
Sean J Kim, 39
Connected to:
Aihua Jin, 52Aiwen J Jin, 67Alex Jin, 36Alice Jin, 34Anita Jin, 84Annie Jin, 56Ben Jin, 47Cathy Y Jin, 58Claire Y Jin, 28Daniel D Jin, 77

Wei Jin Phones & Addresses

  • Newark, CA
  • Fremont, CA
  • Fountain Valley, CA
  • San Gabriel, CA
  • Temple City, CA
  • El Monte, CA
  • Palmetto Bay, FL
  • Fort Worth, TX
  • Fountain Vly, CA
  • 507 E Broadway APT B, San Gabriel, CA 91776 (626) 451-9999

Work

Position: Sales Occupations

Education

Degree: Bachelor's degree or higher

Resumes

Resumes

Wei Jin Photo 1

Wei Jin

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Location:
Fremont, CA
Education:
Northwestern Polytechnical University 2012 - 2015
Bachelors, Computer Science
Skills:
Visual Studio
Microsoft Office
Management
Microsoft Word
Powerpoint
Research
Microsoft Excel
C/C++
Public Speaking
Customer Service
Interests:
Swimming
Traveling
Reading
Languages:
Mandarin
English
Wei Jin Photo 2

Professor

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Industry:
Higher Education
Work:
Shanghai Jiao Tong University
Professor
Wei Jin Photo 3

Restaurant Manager

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Work:
Tokyo Express
Restaurant Manager
Wei Jin Photo 4

Wei Jin

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Wei Jin Photo 5

Wei Jin

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Wei Jin Photo 6

Wei Jin

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Wei Jin Photo 7

Wei Jin

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Location:
United States
Wei Jin Photo 8

Wei Jin

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Location:
United States

Business Records

Name / Title
Company / Classification
Phones & Addresses
Wei Jin
Owner
Judah Okazu Ya
Eating Place
3420 Judah St, San Francisco, CA 94122
(415) 566-6860
Wei Jin
President
Nomi Studio
991 Metro Dr, Monterey Park, CA 91755
PO Box 2098, Temple City, CA 91780
Wei Wei Jin
President
J2W Enterprise, Inc
1323 Brooktree Cir, West Covina, CA 91792
Wei Jin
President
T-FINE INT'L LOGISTICS (USA), INC
Transportation Services · Transportation Services, Nec, Nsk
17028 Colima Rd APT 103, Hacienda Heights, CA 91745
17800 Colima Rd, Whittier, CA 91748
519 W Pomona Blvd, Monterey Park, CA 91754
Wei Jin
Safast International LLC
PO Box 515, Monrovia, CA 91017
712 Ghent St, La Verne, CA 91750
Wei Jin
President
American Innovative Production, Inc
15046 Nelson Ave, Whittier, CA 91744
365 Cloverleaf Dr, Duarte, CA 91706
Wei Lun Jin
President
CRAFT PARTY, INC
18472 E Colima Rd STE 202, Rowland Heights, CA 91748
18472 Colima Rd, Whittier, CA 91748
Wei Juan Jin
President
GOLDEN DREAM INTERNATIONAL ENTERPRISES CORPORATION
1214 Polk St #317, San Francisco, CA 94109

Publications

Us Patents

Method Of Increasing An Energy Density And An Achievable Power Output Of An Energy Storage Device

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US Patent:
20130273261, Oct 17, 2013
Filed:
Sep 30, 2011
Appl. No.:
13/977131
Inventors:
Donald S. Gardner - Los Altos CA, US
Zhaohui Chen - San Jose CA, US
Wei C. Jin - San Diego CA, US
Scott B. Clendenning - Portland OR, US
Eric C. Hannah - Pebble Beach CA, US
Tomm V. Aldridge - Olympia WA, US
John L. Gustafson - Pleasanton CA, US
International Classification:
H01G 9/00
US Classification:
427560, 427 58, 4271261, 427 79, 205122
Abstract:
Methods of increasing an energy density of an energy storage device involve increasing the capacitance of the energy storage device by depositing a material into a porous structure of the energy storage device using an atomic layer deposition process, by performing a procedure designed to increase a distance to which an electrolyte penetrates within channels of the porous structure, or by placing a dielectric material into the porous structure. Another method involves annealing the energy storage device in order to cause an electrically conductive substance to diffuse to a surface of the structure and form an electrically conductive layer thereon. Another method of increasing energy density involves increasing the breakdown voltage and another method involves forming a pseudocapacitor. A method of increasing an achievable power output of an energy storage device involves depositing an electrically conductive material into the porous structure.

Energy Storage Structure, Method Of Manufacturing A Support Structure For Same, And Microelectronic Assembly And System Containing Same

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US Patent:
20130279137, Oct 24, 2013
Filed:
Nov 3, 2011
Appl. No.:
13/977140
Inventors:
Donald S. Gardner - Los Altos CA, US
Zhaohui Chen - San Jose CA, US
Wei C. Jin - Sunnyvale CA, US
Eric C. Hannah - Pebble Beach CA, US
John L. Gustafson - Pleasanton CA, US
Tomm V. Aldridge - Olympia WA, US
International Classification:
B81B 7/00
C25F 3/02
H01M 4/04
H01G 11/04
H01M 4/00
US Classification:
361782, 361502, 429209, 205661
Abstract:
An energy storage structure includes an energy storage device containing at least one porous structure () that contains multiple channels (), each one of which has an opening () to a surface () of the porous structure, and further includes a support structure () for the energy storage device. In a particular embodiment, the porous structure and the support structure are both formed from a first material, and the support structure physically contacts a first portion () of the energy storage device and exposes a second portion () of the energy storage device.

Energy Storage Device, Method Of Manufacturing Same, And Mobile Electronic Device Containing Same

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US Patent:
20140078644, Mar 20, 2014
Filed:
Sep 17, 2012
Appl. No.:
13/621354
Inventors:
Donald S. Gardner - Los Altos CA, US
Wei Jin - Sunnyvale CA, US
Zhaohui Chen - San Jose CA, US
Charles W. Holzwarth - San Jose CA, US
Cary L. Pint - Hayward CA, US
Bum Ki Moon - Santa Clara CA, US
John L. Gustafson - Pleasanton CA, US
International Classification:
H01G 11/26
H01G 9/00
US Classification:
361502, 29 2503
Abstract:
An energy storage device includes a first electrode () including a first plurality of channels () that contain a first electrolyte () and a second electrode () including a second plurality of channels () that contain a second electrolyte (). The first electrode has a first surface () and the second electrode has a second surface (). At least one of the first and second electrodes is a porous silicon electrode, and at least one of the first and second surfaces comprises a passivating layer ().

Method Of Increasing An Energy Density And An Achievable Power Output Of An Energy Storage Device

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US Patent:
20190103229, Apr 4, 2019
Filed:
Mar 26, 2018
Appl. No.:
15/936427
Inventors:
Donald S. Gardner - Los Altos CA, US
Zhaohui Chen - San Jose CA, US
Wei C. Jin - San Diego CA, US
Scott B. Clendenning - Portland OR, US
Eric C. Hannah - Pebble Beach CA, US
Tomm V. Aldridge - Olympia WA, US
John L. Gustafson - Pleasanton CA, US
International Classification:
H01G 9/00
H01G 11/86
H01G 11/30
H01G 11/14
H01G 11/26
H01G 11/58
Abstract:
Methods of increasing an energy density of an energy storage device involve increasing the capacitance of the energy storage device by depositing a material into a porous structure of the energy storage device using an atomic layer deposition process, by performing a procedure designed to increase a distance to which an electrolyte penetrates within channels of the porous structure, or by placing a dielectric material into the porous structure. Another method involves annealing the energy storage device in order to cause an electrically conductive substance to diffuse to a surface of the structure and form an electrically conductive layer thereon. Another method of increasing energy density involves increasing the breakdown voltage and another method involves forming a pseudocapacitor. A method of increasing an achievable power output of an energy storage device involves depositing an electrically conductive material into the porous structure.

Energy Storage Device, Method Of Manufacturing Same, And Mobile Electronic Device Containing Same

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US Patent:
20150049414, Feb 19, 2015
Filed:
Feb 21, 2012
Appl. No.:
13/977493
Inventors:
Donald S. Gardner - Los Altos CA, US
Tomm V. Aldridge - Olympia WA, US
Charles W. Holzwarth - San Jose CA, US
Cary L. Pint - Hayward CA, US
Zhaohui Chen - San Jose CA, US
Wei C. Jin - Sunnyvale CA, US
Yang Liu - State College PA, US
John L. Gustafson - Santa Clara CA, US
International Classification:
H01G 11/00
H01G 11/84
H01G 11/52
US Classification:
361502, 216 6
Abstract:
An energy storage device includes a middle section () including a plurality of double-sided porous structures (), each of which contain multiple channels () in two opposing surfaces () thereof, an upper section () comprising a single-sided porous structure () containing multiple channels () in a surface () thereof, and a lower section () including a single-sided porous structure () containing multiple channels () in a surface () thereof.

Energy Storage Device, Method Of Manufacturing A Porous Structure For Same, And Microelectronic Assembly And System Containing Same

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US Patent:
20150002986, Jan 1, 2015
Filed:
Dec 8, 2011
Appl. No.:
13/977145
Inventors:
Donald Don Gardner - Los Altos CA, US
Wei Jin - Sunnyvale CA, US
Zhaohui Chen - San Jose CA, US
International Classification:
H01G 11/26
H01G 11/86
H01G 11/10
US Classification:
361502, 216 6
Abstract:
An energy storage device comprises at least one porous structure () containing multiple channels (), each one of which has an opening to a surface () of the porous structure. Each one of the channels has a first end () having a first average width () and a second end () having a second average width (), with the first end being located where the channel opens to the surface of the porous structure and the second end being located at a distance from the first end as measured along a length of the channel. For at least some of the channels, the first average width is larger than the second average width.

Fabrication Of Porous Silicon Electrochemical Capacitors

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US Patent:
20140233152, Aug 21, 2014
Filed:
Dec 27, 2011
Appl. No.:
13/997881
Inventors:
Donald S. Gardner - Los Altos CA, US
Cary L. Pint - Hayward CA, US
Charles W. Holzwarth - San Jose CA, US
Wei Jin - Sunnyvale CA, US
Zhaohui Chen - San Jose CA, US
Yang Liu - State College PA, US
Eric C. Hannah - Pebble Beach CA, US
John L. Gustafson - Pleasanton CA, US
International Classification:
H01G 11/86
H01G 11/30
H01G 4/008
US Classification:
361305, 29 2501, 216 6, 205665
Abstract:
Methods of forming microelectronic structures are described. Embodiments of those methods may include forming an electrochemical capacitor device by forming pores in low-purity silicon materials. Various embodiments described herein enable the fabrication of high capacitive devices using low cost techniques.

Integration Of Energy Storage Devices Onto Substrates For Microelectronics And Mobile Devices

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US Patent:
20140226260, Aug 14, 2014
Filed:
Dec 21, 2011
Appl. No.:
13/995138
Inventors:
Donald S. Gardner - Mountain View CA, US
Cary L. Pint - Hayward CA, US
Charles W. Holzwarth - San Jose CA, US
Wei Jin - Sunnyvale CA, US
Zhaohui Chen - San Jose CA, US
John L. Gustafson - Pleasanton CA, US
International Classification:
H01G 11/56
H01G 11/84
US Classification:
361502, 29 2503
Abstract:
In an embodiment of the invention, an energy storage device is described including a pair of electrically conductive porous structures, with each of the electrically conductive porous structures containing an electrolyte loaded into a plurality of pores. A solid or semi-solid electrolyte layer separates the pair of electrically conductive porous structures and penetrates the plurality of pores of the pair of electrically conductive porous structures. In an embodiment of the invention, an electrically conductive porous structure is formed on a substrate, the electrically conductive porous structure containing a plurality of pores. An electrolyte is then loaded into the plurality of pores, and an electrolyte layer is formed over the electrically conductive porous structure. In an embodiment, the electrolyte layer penetrates the plurality of pores of the electrically conductive porous structure.
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Wei A Jin from Newark, CA, age ~56 Get Report