Vu Huy Tran

7297376, Nov 20, 2007

Jul 7, 2006

11/483842

Kang Sub Yim - Santa Clara CA, US
Kelvin Chan - Santa Clara CA, US
Nagarajan Rajagopalan - Santa Clara CA, US
Josephine Ju-Hwei Chang Liu - Boise ID, US
Sang H. Ahn - Santa Clara CA, US
Yi Zheng - San Jose CA, US
Sang In Yi - Sunnyvale CA, US
Vu Ngoc Tran Nguyen - Santa Clara CA, US
Alexandros T. Demos - Fremont CA, US

Applied Materials, Inc. - Santa Clara CA

H05H 1/24

427578, 427532

A method for depositing a low dielectric constant film is provided by positioning a substrate within a processing chamber having a powered electrode, and flowing into the processing chamber an initiation gas mixture of a flow rate of one or more organosilicon compounds and a flow rate of one or more oxidizing gases to deposit an initiation layer by applying an RF power to the electrode. The organosilicon compound flow rate is then ramped-up to a final flow rate to deposit a first transition layer, upon which one or more porogen compounds is introduced and the flow rate porogen compound is ramped up to a final deposition rate while depositing a second transition layer. A porogen doped silicon oxide layer is then deposited by flowing the final porogen and organosilicon flow rates until the RF power is turned off.

7399364, Jul 15, 2008

Jun 12, 2006

11/423586

Vu Ngoc Tran Nguyen - Santa Clara CA, US
Bok Hoen Kim - San Jose CA, US
Kang Sub Yim - Santa Clara CA, US

Applied Materials, Inc. - Santa Clara CA

C23C 16/00
C23C 16/22
C23C 16/24
C23C 16/509
C23C 16/52
H01L 21/31
H01L 21/469

118697, 118696, 118715, 118723 E, 700121

A method of forming a cap layer over a dielecrtic layer on a substrate including forming a plasma from a process gas including oxygen and tetraethoxysilane, and depositing the cap layer on the dielectric layer, where the cap layer comprises a thickness of about 600 Å or less, and a compressive stress of about 200 MPa or more. Also, a method of forming a cap layer over a dielectric layer on a substrate including forming a process gas by flowing together about 200 mgm to about 8000 mgm of tetraethoxysilane, about 2000 to about 20000 sccm of oxygen (O), and about 2000 sccm to about 20000 sccm of carrier gas, generating a plasma from the process gas, where one or more RF generators supply about 50 watts to about 100 watts of low frequency RF power to the plasma, and about 100 watts to about 600 watts of high frequency RF power to the plasma, and depositing the cap layer on the dielectric layer.

20070207275, Sep 6, 2007

Aug 23, 2006

11/508544

Thomas Nowak - Cupertino CA, US
Kang Sub Yim - Santa Clara CA, US
Sum-Yee Betty Tang - San Jose CA, US
Kwangduk Douglas Lee - Santa Clara CA, US
Vu Ngoc Tran Nguyen - Santa Clara CA, US
Dennis Singleton - San Jose CA, US
Martin Jay Seamons - San Jose CA, US
Karthik Janakiraman - San Jose CA, US
Ganesh Balasubramanian - Sunnyvale CA, US
Mohamed Ayoub - San Jose CA, US
Wendy H. Yeh - Mountain View CA, US
Alexandros T. Demos - Fremont CA, US
Hichem M'Saad - Santa Clara CA, US

H05H 1/24

427569

Methods for cleaning semiconductor processing chambers used to process carbon-containing films, such as amorphous carbon films, barrier films comprising silicon and carbon, and low dielectric constant films including silicon, oxygen, and carbon are provided. The methods include using a remote plasma source to generate reactive species that clean interior surfaces of a processing chamber in the absence of RF power in the chamber. The reactive species are generated from an oxygen-containing gas, such as O, and/or a halogen-containing gas, such as NF. An oxygen-based ashing process may also be used to remove carbon deposits from the interior surfaces of the chamber before the chamber is exposed to the reactive species from the remote plasma source.

7285503, Oct 23, 2007

Jun 21, 2004

10/873811

Vu Ngoc Tran Nguyen - Santa Clara CA, US
Bok Hoen Kim - San Jose CA, US
Kang Sub Yim - Santa Clara CA, US

Applied Materials, Inc. - Santa Clara CA

H01L 21/31
H01L 21/469

438789, 438787, 438788, 252E21029, 252E21277, 252E21576

A method of forming a cap layer over a dielectric layer on a substrate including forming a plasma from a process gas including oxygen and tetraethoxysilane, and depositing the cap layer on the dielectric layer, where the cap layer comprises a thickness of about 600 Å or less, and a compressive stress of about 200 MPa or more. Also, a method of forming a cap layer over a dielectric layer on a substrate including forming a process gas by flowing together about 200 mgm to about 8000 mgm of tetraethoxysilane, about 2000 to about 20000 sccm of oxygen (O), and about 2000 sccm to about 20000 sccm of carrier gas, generating a plasma from the process gas, where one or more RF generators supply about 50 watts to about 100 watts of low frequency RF power to the plasma, and about 100 watts to about 600 watts of high frequency RF power to the plasma, and depositing the cap layer on the dielectric layer.

20200227258, Jul 16, 2020

Oct 9, 2019

16/597466

- Santa Clara CA, US
Ganesh BALASUBRAMANIAN - Fremont CA, US
Arkajit ROY BARMAN - Singapore, SG
Hidehiro KOJIRI - Sunnyvale CA, US
Xinhai HAN - Santa Clara CA, US
Deenesh PADHI - Sunnyvale CA, US
Chuan Ying WANG - Sunnyvale CA, US
Yue CHEN - Sunnyvale CA, US
Daemian Raj BENJAMIN RAJ - Fremont CA, US
Nikhil Sudhindrarao JORAPUR - Sunnyvale CA, US
Vu Ngoc Tran NGUYEN - Santa Clara CA, US
Miguel S. FUNG - Sunnyvale CA, US
Jose Angelo OLAVE - Angeles, PH
Thian Choi LIM - Singapore, SG

H01L 21/02
H01L 21/67

A method of forming a film stack with reduced defects is provided and includes positioning a substrate on a substrate support within a processing chamber and sequentially depositing polysilicon layers and silicon oxide layers to produce the film stack on the substrate. The method also includes supplying a current of greater than 5 ampere (A) to a plasma profile modulator while generating a deposition plasma within the processing chamber, exposing the substrate to the deposition plasma while depositing the polysilicon layers and the silicon oxide layers, and maintaining the processing chamber at a pressure of greater than 2 Torr to about 100 Torr while depositing the polysilicon layers and the silicon oxide layers.

20170331267, Nov 16, 2017

Apr 21, 2017

15/493728

- San Jose CA, US
Vu TRAN - San Jose CA, US
Sau VO - San Jose CA, US

H02G 11/00
H02S 40/36
H02S 40/34
H02S 40/44
H02G 1/06

Embodiments disclosed herein enable assembly of a solar power cable harness to be completed in a more consistent and efficient manner than known methods of assembly.

20160017492, Jan 21, 2016

Jul 16, 2015

14/801348

- Santa Clara CA, US
Alexandros T. DEMOS - Fremont CA, US
Vu Ngoc Tran NGUYEN - Santa Clara CA, US
Kelvin CHAN - San Ramon CA, US
He REN - San Jose CA, US
Kang Sub YIM - Palo Alto CA, US
Mehul B. NAIK - San Jose CA, US

C23C 16/48
C23C 16/40
C23C 16/505
B01J 19/12

Embodiments described herein provide a method for sealing a porous low-k dielectric film. The method includes forming a sealing layer on the porous low-k dielectric film using a cyclic process. The cyclic process includes repeating a sequence of depositing a sealing layer on the porous low-k dielectric film and treating the sealing layer until the sealing layer achieves a predetermined thickness. The treating of each intermediate sealing layer generates more reactive sites on the surface of each intermediate sealing layer, which improves the quality of the resulting sealing layer.