Vinh Q Lam

8524511, Sep 3, 2013

Aug 10, 2012

13/571675

Tom Zhong - Saratoga CA, US
Vinh Lam - Roseville CA, US
Zhongjian Teng - Santa Clara CA, US

Headway Technologies, Inc. - Milpitas CA

H01L 21/00

438 3, 438637, 257421, 257E29323

A CMOS device is provided in a substrate. A magnetic tunnel junction (MTJ) is provided over the CMOS device and connected to the CMOS device by a metal ring contact wherein a dielectric or other filling material forms the center of the metal ring contact and wherein a bottom of the metal ring contact underlying said filling material is metal.

20220384713, Dec 1, 2022

Aug 10, 2022

17/885079

- Hsin-Chu, TW
Tom Zhong - Saratoga CA, US
Vinh Lam - Dublin CA, US
Vignesh Sundar - Sunnyvale CA, US
Zhongjian Teng - Santa Clara CA, US

H01L 43/02
H01L 43/12
G11B 19/20
G11B 5/60
G11B 5/48
G11B 5/39

A magnetic tunneling junction (MTJ) structure is described. The MJT structure includes a stress modulating layer on a first electrode layer, where a material of the stress modulating layer is different from a material of the first electrode layer. The MJT structure further includes a MTJ material stack on the stress modulating layer. And the MJT structure further includes a second electrode layer on the MTJ material stack. The stress modulating layer reduces crystal growth defects and interfacial defects during annealing and improve the interface lattice epitaxy. This will improve device performance.

20230107977, Apr 6, 2023

Dec 12, 2022

18/064808

- Hsin-Chu, TW
Tom Zhong - Saratoga CA, US
Zhongjian Teng - Santa Clara CA, US
Vinh Lam - Dublin CA, US
Yi Yang - Fremont CA, US

H01L 43/12
H01F 10/06
H01F 10/16
H01L 43/02
H01L 43/08
H01L 43/10

A layered thin film device, such as a MTJ (Magnetic Tunnel Junction) device can be customized in shape by sequentially forming its successive layers over a symmetrically curved electrode. By initially shaping the electrode to have a concave or convex surface, the sequentially formed layers conform to that shape and acquire it and are subject to stresses that cause various crystal defects to migrate away from the axis of symmetry, leaving the region immediately surrounding the axis of symmetry relatively defect free. The resulting stack can then be patterned to leave only the region that is relatively defect free.

20200075844, Mar 5, 2020

Nov 11, 2019

16/679498

- Hsinchu, TW
Tom Zhong - Saratoga CA, US
Vinh Lam - Dublin CA, US
Vignesh Sundar - Sunnyvale CA, US
Zhongjian Teng - Santa Clara CA, US

H01L 43/02
G11B 5/48
G11B 5/60
G11B 19/20
H01L 43/12

A method for fabricating an improved magnetic tunneling junction (MTJ) structure is described. A bottom electrode is provided on a substrate. A MTJ stack is deposited on the bottom electrode. A top electrode is deposited on the MTJ stack. A first stress modulating layer is deposited between the bottom electrode and the MTJ stack, or a second stress modulating layer is deposited between the MTJ stack and the top electrode, or both a first stress modulating layer is deposited between the bottom electrode and the MTJ stack and a second stress modulating layer is deposited between the MTJ stack and the top electrode. The top electrode and MTJ stack are patterned and etched to form a MTJ device. The stress modulating layers reduce crystal growth defects and interfacial defects during annealing and improve the interface lattice epitaxy. This will improve device performance.

20190346940, Nov 14, 2019

Jul 22, 2019

16/518912

- San Jose CA, US
Vinh Vi Lam - San Jose CA, US
Frank Peter Lambrecht - Danville CA, US

Opdig, Inc. - San Jose CA

G06F 3/0346
G06F 3/01
G06F 3/023

Computing interface systems and methods are disclosed. Some implementations include a first accelerometer attached to a first fastening article that is capable of holding the first accelerometer in place on a portion of a thumb of a user. Some implementations may also include a second accelerometer attached to a second fastening article that is capable of holding the second accelerometer in place on a portion of a wrist of a user. Some implementations may additionally or alternatively include magnetometers and/or gyroscopes attached to the first and second fastening articles. Some implementations may also include a processing device configured to receive measurements from the accelerometers, magnetometers, and/or gyroscopes and identify, based on the measurements, symbols associated with motions of a user's hand and/or the orientation of the hand. Some implementations may allow a user to control a cursor in a three dimensional virtual space and interact with objects in that space.

20190341542, Nov 7, 2019

May 1, 2018

15/968035

- Hsinchu, TW
Tom Zhong - Saratoga CA, US
Vinh Lam - Dublin CA, US
Vignesh Sundar - Sunnyvale CA, US
Zhongjian Teng - Santa Clara CA, US

H01L 43/02
H01L 43/12
G11B 5/48
G11B 5/60
G11B 19/20

A method for fabricating an improved magnetic tunneling junction (MTJ) structure is described. A bottom electrode is provided on a substrate. A MTJ stack is deposited on the bottom electrode. A top electrode is deposited on the MTJ stack. A first stress modulating layer is deposited between the bottom electrode and the MTJ stack, or a second stress modulating layer is deposited between the MTJ stack and the top electrode, or both a first stress modulating layer is deposited between the bottom electrode and the MTJ stack and a second stress modulating layer is deposited between the MTJ stack and the top electrode. The top electrode and MTJ stack are patterned and etched to form a MTJ device. The stress modulating layers reduce crystal growth defects and interfacial defects during annealing and improve the interface lattice epitaxy. This will improve device performance.

20190148630, May 16, 2019

Nov 13, 2017

15/810494

- Milpitas CA, US
Tom Zhong - Saratoga CA, US
Zhongjian Teng - Santa Clara CA, US
Vinh Lam - Dublin CA, US
Yi Yang - Fremont CA, US

H01L 43/12
H01L 43/02
H01L 43/08
H01L 43/10
H01F 10/06
H01F 10/16

A layered thin film device, such as a MTJ (Magnetic Tunnel Junction) device can be customized in shape by sequentially forming its successive layers over a symmetrically curved electrode. By initially shaping the electrode to have a concave or convex surface, the sequentially formed layers conform to that shape and acquire it and are subject to stresses that cause various crystal defects to migrate away from the axis of symmetry, leaving the region immediately surrounding the axis of symmetry relatively defect free. The resulting stack can then be patterned to leave only the region that is relatively defect free.

20180091436, Mar 29, 2018

Aug 25, 2017

15/686318

- Mountain View CA, US
Vinh The Lam - Milpitas CA, US
Kirill Mendelev - Sunnyvale CA, US
Li Shi - San Mateo CA, US

H04L 12/911
H04L 12/825
H04L 12/26

A distributed bandwidth allocation system a distributed bandwidth limiter, a first throttler, and a second throttler. The distributed bandwidth limiter receives first usage data for a first entity and usage data for a second entity. Based on the first usage data, second usage data, and a total bandwidth allocation, the distributed bandwidth limiter determines a first bandwidth allocation specifying bandwidth available for network traffic for the first entity and a second bandwidth allocation that specifies bandwidth available for network traffic for the second entity, wherein a sum of the first bandwidth allocation and the second bandwidth allocation does not exceed the total bandwidth allocation. The first bandwidth allocation and the second bandwidth allocation are provided to respective throttlers than manage traffic for the first and second entities.