Resumes
Resumes
Troy Clear Phones & Addresses
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1557 Morrison St, Frankfort, IN 46041 (765) 654-6268
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1321 Underwood St, Lafayette, IN 47904 (765) 838-2922
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Rossville, IN
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Walton, IN
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805 S 5Th St TRLR 11, Frankfort, IN 46041
Work
Position:
Food Preparation and Serving Related Occupations
Publications
Us Patents
Technique For Improving Negative Potential Immunity Of An Integrated Circuit
View pageUS Patent:
7470955, Dec 30, 2008
Filed:
Apr 15, 2005
Appl. No.:
11/107084
Inventors:
Jack L. Glenn - Kokomo IN, US
Troy D. Clear - Kokomo IN, US
Mark W. Gose - Kokomo IN, US
Doublas B. Osborn - Kokomo IN, US
Nicholas T. Campanile - Kokomo IN, US
Troy D. Clear - Kokomo IN, US
Mark W. Gose - Kokomo IN, US
Doublas B. Osborn - Kokomo IN, US
Nicholas T. Campanile - Kokomo IN, US
Assignee:
Delphi Technologies, Inc. - Troy MI
International Classification:
H01L 29/06
US Classification:
257335, 257338, 257E29027
Abstract:
An integrated circuit (IC) with negative potential protection includes at least one double-diffused metal-oxide semiconductor (DMOS) cell formed in a first-type epitaxial pocket, which is formed in a second-type substrate. The IC also includes a second-type+ isolation ring formed in the substrate to isolate the first-type epitaxial pocket and a first-type+ ring formed through the first-type epitaxial pocket between the second-type+ isolation ring and the DMOS cell.
Protection Device For Handling Energy Transients
View pageUS Patent:
20060208340, Sep 21, 2006
Filed:
Mar 15, 2005
Appl. No.:
11/080274
Inventors:
Jack Glenn - Kokomo MI, US
Troy Clear - Kokomo IN, US
Mark Gose - Kokomo IN, US
John Dikeman - Kokomo IN, US
Troy Clear - Kokomo IN, US
Mark Gose - Kokomo IN, US
John Dikeman - Kokomo IN, US
International Classification:
H01L 29/861
US Classification:
257603000, 257E29335
Abstract:
A protection device for handling energy transients includes a plurality of basic unit Zener diodes connected in series to achieve a desired breakdown voltage. Each of the basic unit Zener diodes is formed in a first-type substrate. Each of the basic unit Zener diodes comprises a second-type well formed in the substrate, a second-type Zener region formed in the second-type well and a first-type+ region formed over the second-type Zener region between a first and second second-type+ region.