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Tom Thanh Quach

from Torrance, CA
Age ~96

Tom Quach Phones & Addresses

  • 17504 Patronella Ave, Torrance, CA 90504 (310) 327-3004

Work

Company: Xerox, copy solution inc - Monterey Park, CA Jan 2014 Position: Account manager, customer service, marketing

Education

School / High School: California State Polytechnic University- Pomona, CA Jun 2008 Specialities: Bachelor of Science in Business Administration

Skills

Microsoft Offices

Resumes

Resumes

Tom Quach Photo 1

Senior Oracle Apps Dba

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Location:
Los Angeles, CA
Industry:
Health, Wellness And Fitness
Work:
Sunrider International
Senior Oracle Apps Dba
Skills:
Oracle E Business Suite
Tom Quach Photo 2

Tom Quach

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Location:
Los Angeles, CA
Industry:
Electrical/Electronic Manufacturing
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Tom Quach

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Tom Quach

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Tom Quach

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Tom Quach

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Tom Quach

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Tom Quach West Covina, CA

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Work:
Xerox, Copy Solution Inc
Monterey Park, CA
Jan 2014 to Dec 2014
Account Manager, Customer Service, Marketing

Morgan Drexen
Costa Mesa, CA
Jan 2013 to May 2013
Legal Intake Specialist

Law Offices of John A. Mendoza
Long Beach, CA
Nov 2010 to Jun 2012
Accounting Clerk

JP Morgan Chase
Monterey Park, CA
Nov 2008 to Oct 2010
Personal Banker

Subset M
Huntington Beach, CA
May 2008 to Jul 2008
New Media Marketing Intern

L.A. Toys
Los Angeles, CA
Jun 2003 to Jul 2003
Administrative Assistant Intern

Education:
California State Polytechnic University
Pomona, CA
Jun 2008
Bachelor of Science in Business Administration

Mt. San Antonio College
Walnut, CA
2015
Bachelors of Science in Accounting

Skills:
Microsoft Offices

Business Records

Name / Title
Company / Classification
Phones & Addresses
Tom Quach
Manager, Principal
Lee's Sandwiches
Eating Place
7180 Lampson Ave, Garden Grove, CA 92841
(714) 893-2828
Tom Quach
President
GOLDEN INFINITY GROUP, INC
200 S Palm Ave, Alhambra, CA 91801

Publications

Us Patents

Method Of Fabricating A Self-Aligned Double Recess Gate Profile

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US Patent:
55567975, Sep 17, 1996
Filed:
May 30, 1995
Appl. No.:
8/453676
Inventors:
Tom Y. Chi - San Gabriel CA
Liping D. Hou - Rancho Palos Verdes CA
Kusol Lee - Gardena CA
Danny Li - Torrance CA
Ishver K. Naik - Rancho Palos Verdes CA
Tom Quach - Torrance CA
Assignee:
Hughes Aircraft Company - Los Angeles CA
International Classification:
H01L 218258
US Classification:
437405
Abstract:
A method of fabricating a self-aligned double gate recess profile in a semiconductor substrate is disclosed in which a first mask layer is formed over the substrate. A second mask layer having an opening is formed over the first mask layer. An opening at least as wide as the second mask layer's opening is formed through the first mask layer to expose the substrate beneath the second mask layer's opening. A first recess is etched in the semiconductor through the second mask layer's opening. The first mask layer's opening is then uniformly expanded and a wider recess, aligned to the first recess, is then formed in the semiconductor. The method is particularly applicable to the formation of self-aligned gate and channel recesses in a GaAs MESFET.

Dual Etchant Process, Particularly For Gate Recess Fabrication In Gaas Mmic Chips

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US Patent:
54362016, Jul 25, 1995
Filed:
May 28, 1993
Appl. No.:
8/068871
Inventors:
Tom Y. Chi - San Gabriel CA
Danny Li - Torrance CA
Liping Hou - Rancho Palos Verdes CA
Tom Quach - Torrance CA
Assignee:
Hughes Aircraft Company - Los Angeles CA
International Classification:
H01L 218252
US Classification:
437203
Abstract:
A semiconductor substrate is etched in a two-step sequence, with two different liquid etchants that have different lateral etch rates. The relative time periods for which the etchants are applied are selected to achieve a close match between the actual etch profile and the desired profile. The process is particularly applicable to the formation of a gate recess in a GaAs MESFET for high power amplification.

Process For Providing Clean Lift-Off Of Sputtered Thin Film Layers

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US Patent:
57054320, Jan 6, 1998
Filed:
Dec 1, 1995
Appl. No.:
8/566197
Inventors:
Kusol Lee - Gardena CA
Tom Quach - Torrance CA
Danny Li - Torrance CA
Liping D. Hou - Rancho Palos Verdes CA
Sam Chung - Costa Mesa CA
Tom Y. Chi - San Gabriel CA
Assignee:
Hughes Aircraft Company - Los Angeles CA
International Classification:
H01L 21465
US Classification:
437228
Abstract:
A unique photoresist process is provided which achieves clean and complete lift-off of a thin film layer such as a sputtered thin film formed on a photoresist which is formed above a semiconductor substrate. The process of the present invention relies on a reentrant photoresist profile which breaks the continuity of the thin film layer. Accordingly, the process of the present invention ensures a clean lift-off. The desired photoresist profile which breaks the continuity of the thin film layer can be obtained by a typical photoresist process preceded by an oxidation process that takes place on the surface of the semiconductor substrate. The oxidation process provides a thin native oxide layer with thickness ranging from about 30 to 50. ANG. No extra processing steps involving dielectric film deposition and etch are required to achieve clean lift-off. Nevertheless, the process of the present invention ensures the clean lift-off of the thin film layer.
Tom Thanh Quach from Torrance, CA, age ~96 Get Report